Self-trapped holes and polaronic acceptors in ultrawide-bandgap oxides von Lyons, John L.

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Bright triplet excitons in caesium lead halide perovskites von Becker, Michael A., Vaxenburg, Roman, Nedelcu, Georgian, Sercel, Peter C., Shabaev, Andrew, Mehl, Michael J., Michopoulos, John G., Lambrakos, Samuel G., Bernstein, Noam, Lyons, John L., Stöferle, Thilo, Mahrt, Rainer F., Kovalenko, Maksym V., Norris, David J., Rainò, Gabriele, Efros, Alexander L.

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Quasicubic model for metal halide perovskite nanocrystals von Sercel, Peter C., Lyons, John L., Bernstein, Noam, Efros, Alexander L.

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Shallow versus deep nature of Mg acceptors in nitride semiconductors von Lyons, John L, Janotti, Anderson, Van de Walle, Chris G

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Computationally predicted energies and properties of defects in GaN von Lyons, John L., Van de Walle, Chris G.

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A survey of acceptor dopants for β-Ga2O3 von Lyons, John L

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Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters von Dreyer, Cyrus E., Alkauskas, Audrius, Lyons, John L., Speck, James S., Van de Walle, Chris G.

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Semiconductor-Based Photoelectrochemical Water Splitting at the Limit of Very Wide Depletion Region von Liu, Mingzhao, Lyons, John L., Yan, Danhua, Hybertsen, Mark S.

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Effect of Anisotropic Confinement on Electronic Structure and Dynamics of Band Edge Excitons in Inorganic Perovskite Nanowires von Folie, Brendan D, Tan, Jenna A, Huang, Jianmei, Sercel, Peter C, Delor, Milan, Lai, Minliang, Lyons, John L, Bernstein, Noam, Efros, Alexander L, Yang, Peidong, Ginsberg, Naomi S

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Band Alignment of ScxAl1-xN/GaN Heterojunctions von Jin, Eric N, Hardy, Matthew T, Mock, Alyssa L, Lyons, John L, Kramer, Alan R, Tadjer, Marko J, Nepal, Neeraj, Katzer, D Scott, Meyer, David J

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Deep polaronic acceptors in LiGa5O8 von Lyons, John L.

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Dark and Bright Excitons in Halide Perovskite Nanoplatelets von Gramlich, Moritz, Swift, Michael W., Lampe, Carola, Lyons, John L., Döblinger, Markus, Efros, Alexander L., Sercel, Peter C., Urban, Alexander S.

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Effective Donor Dopants for Lead Halide Perovskites von Lyons, John L

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A p-type dopable ultrawide-bandgap oxide von Lyons, John L, Janotti, Anderson

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Exciton Fine Structure in Perovskite Nanocrystals von Sercel, Peter C, Lyons, John L, Wickramaratne, Darshana, Vaxenburg, Roman, Bernstein, Noam, Efros, Alexander L

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A first-principles understanding of point defects and impurities in GaN von Lyons, John L., Wickramaratne, Darshana, Van de Walle, Chris G.

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First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO von Alkauskas, Audrius, Lyons, John L, Steiauf, Daniel, Van de Walle, Chris G

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Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN von Lyons, John L, Janotti, Anderson, Walle, Chris G. Van de

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Donor doping of corundum (AlxGa1−x)2O3 von Wickramaratne, Darshana, Varley, Joel B., Lyons, John L.

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First-Principles Calculations of Point Defects for Quantum Technologies von Dreyer, Cyrus E, Alkauskas, Audrius, Lyons, John L, Janotti, Anderson, Van de Walle, Chris G

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