A U-Gate InGaAs/GaAsSb Heterojunction TFET of Tunneling Normal to the Gate With Separate Control Over ON- and OFF-State Current von Shih, Pao-Chuan, Hou, Wei-Chih, Li, Jiun-Yun

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Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures von Tai, Chia‐Tse, Chiu, Po‐Yuan, Liu, Chia‐You, Kao, Hsiang‐Shun, Harris, C. Thomas, Lu, Tzu‐Ming, Hsieh, Chi‐Ti, Chang, Shu‐Wei, Li, Jiun‐Yun

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Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain von Chuang, Yen, Liu, Chia-You, Luo, Guang-Li, Li, Jiun-Yun

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Light‐Induced Activation of Adaptive Junction for Efficient Solar‐Driven Oxygen Evolution: In Situ Unraveling the Interfacial Metal–Silicon Junction von Tung, Ching‐Wei, Kuo, Tsung‐Rong, Hsu, Chia‐Shuo, Chuang, Yen, Chen, Hsiao‐Chien, Chang, Chung‐Kai, Chien, Chia‐Ying, Lu, Ying‐Jui, Chan, Ting‐Shan, Lee, Jyh‐Fu, Li, Jiun‐Yun, Chen, Hao Ming

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Room‐Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes von Liu, Chia‐You, Tien, Kai‐Ying, Chiu, Po‐Yuan, Wu, Yu‐Jui, Chuang, Yen, Kao, Hsiang‐Shun, Li, Jiun‐Yun

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Recent progress in undoped group-IV heterostructures for quantum technologies von Tai, Chia-Tse, Li, Jiun-Yun

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High-Mobility GeSn n-Channel MOSFETs by Low-Temperature Chemical Vapor Deposition and Microwave Annealing von Liu, Tzu-Hung, Chiu, Po-Yuan, Chuang, Yen, Liu, Chia-You, Shen, Chang-Hong, Luo, Guang-Li, Li, Jiun-Yun

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Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer von Huang, Chiao-Ti, Li, Jiun-Yun, Chou, Kevin S., Sturm, James C.

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Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure von Wang, Xuejing, Lin, Yung-Chen, Tai, Chia-Tse, Lee, Seok Woo, Lu, Tzu-Ming, Shin, Sun Hae Ra, Addamane, Sadhvikas J., Sheehan, Chris, Li, Jiun-Yun, Kim, Yerim, Yoo, Jinkyoung

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Tunable Electrodeposition of Ni Electrocatalysts onto Si Microwires Array for Photoelectrochemical Water Oxidation von Tung, Ching‐Wei, Chuang, Yen, Chen, Hsiao‐Chien, Chan, Ting‐Shan, Li, Jiun‐Yun, Chen, Hao Ming

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Single and double hole quantum dots in strained Ge/SiGe quantum wells von Hardy, Will J, Harris, C Thomas, Su, Yi-Hsin, Chuang, Yen, Moussa, Jonathan, Maurer, Leon N, Li, Jiun-Yun, Lu, Tzu-Ming, Luhman, Dwight R

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A Hyperbolic Micromagnet for Multiple Spin Qubits With Fast Rabi Oscillations and High Addressability von Chang, Che-Hao, Li, Yu-Cheng, Wu, Yu-Jui, Liao, Chen-Yao, Lin, Min-Jui, Tsao, Hung-Yu, Li, Jiun-Yun

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Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K von Chiao-Ti Huang, Jiun-Yun Li, Sturm, J. C.

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Electron-spin-resonance meanderlines for effective spin control in Si quantum dots for large-scale qubit applications von Chang, Yao-Chun, Huang, Ian, Chen, Chiung-Yu, Lin, Min-Jui, Chen, Shih-Yuan, Li, Jiun-Yun

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Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening von Su, Yi-Hsin, Chou, Kuan-Yu, Chuang, Yen, Lu, Tzu-Ming, Li, Jiun-Yun

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Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques von Hong, Tzu-Chieh, Lu, Wen-Hsiang, Wang, Yeong-Her, Li, Jiun-Yun, Lee, Yao-Jen, Chao, Tien-Sheng

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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications von Chang, Shu-Wei, Lu, Tsung-Han, Yang, Cong-Yi, Yeh, Cheng-Jui, Huang, Min-Kun, Meng, Ching-Fan, Chen, Po-Jen, Chang, Ting-Hsuan, Chang, Yan-Shiuan, Jhu, Jhe-Wei, Hong, Tzu-Chieh, Ke, Chu-Chu, Yu, Xin-Ren, Lu, Wen-Hsiang, Baig, Mohammed Aftab, Cho, Ta-Chun, Sung, Po-Jung, Su, Chun-Jung, Hsueh, Fu-Kuo, Chen, Bo-Yuan, Hu, Hsin-Hui, Wu, Chien-Ting, Lin, Kun-Lin, Ma, William Cheng-Yu, Lu, Darsen D., Kao, Kuo-Hsing, Lee, Yao-Jen, Lin, Cheng-Li, Huang, Kun-Ping, Chen, Kun-Ming, Li, Yiming, Samukawa, Seiji, Chao, Tien-Sheng, Huang, Guo-Wei, Wu, Wen-Fa, Lee, Wen-Hsi, Li, Jiun-Yun, Shieh, Jia-Min, Tarng, Jenn-Hwan, Wang, Yeong-Her, Yeh, Wen-Kuan

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Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure von Hsu, Nai-Wen, Hou, Wei-Chih, Chen, Yen-Yang, Wu, Yu-Jui, Kao, Hsiang-Shun, Harris, Charles Thomas, Lu, Tzu-Ming, Li, Jiun-Yun

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High-quality GeSn thin-film resonant cavities for short-wave infrared applications von Wu, Jheng-Ying, Wang, Yu-Fu, Liu, Chia-You, Kuo, Shin-Chun, Chen, Tzu-Hsuan, Li, Jiun-Yun, Huang, Chin-Ya, Liu, Chien-Hao, Yang, Jung-Yen, Chang, Chun-Chieh, Chang, Tzu-Hsuan

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High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls von Hou, Wei-Chih, Shih, Pao-Chuan, Lin, Hao-Hsiung, Wu, Barry Bing-Ruey, Li, Jiun-Yun

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