RETRACTED: The application of sports skill transfer theory in aerobics teaching in the information age von Yan, Song, Ao, Jinping

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Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode von Wang, Qiliang, Wang, Tingting, Pu, Taofei, Cheng, Shaoheng, Li, Xiaobo, Li, Liuan, Ao, Jinping

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All‐Optic Logical Operations Based on the Visible‐Near Infrared Bipolar Optical Response von You, Jie, Han, Zhao, Zhang, Ningning, Zhang, Qiancui, Zhang, Yichi, Liu, Yang, Li, Yang, Ao, Jinping, Jiang, Zuimin, Zhong, Zhenyang, Guo, Hui, Hu, Huiyong, Wang, Liming, Zhu, Zhangming

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Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies von Wang, Ying, Ao, Jinping, Liu, Shibin, Hao, Yue

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Ge pMOSFETs with GeO x Passivation Formed by Ozone and Plasma Post Oxidation von Xu, Yang, Han, Genquan, Liu, Huan, Wang, Yibo, Liu, Yan, Ao, Jinping, Yue Hao

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Investigation of the Energy Band at the Molybdenum Disulfide and ZrO2 Heterojunctions von Liu, Xinke, Hu, Cong, Li, Kuilong, Wang, Wenjia, Li, Zhiwen, Ao, Jinping, Wu, Jing, He, Wei, Mao, Wei, Liu, Qiang, Yu, Wenjie, Chung, Ren-Jei

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Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting von Kang, Junjie, Choi, Hak-Jong, Ren, Fang, Ao, Jinping, Li, Hongjian, Li, Yi, Du, Weichuan, Zhou, Kun, Tan, Hao, Huh, Daihong, Li, Panpan, Liang, Meng, Gao, Songxin, Tang, Chun, Yi, Xiaoyan, Lee, Heon, Liu, Zhiqiang

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Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors von Shen, Zhen, He, Liang, Zhou, Guilin, Yao, Yao, Yang, Fan, Ni, Yiqiang, Zheng, Yue, Zhou, Deqiu, Ao, Jinping, Zhang, Baijun, Liu, Yang

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Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique von Yao, Yao, He, Zhiyuan, Yang, Fan, Shen, Zhen, Zhang, Jincheng, Ni, Yiqiang, Li, Jin, Wang, Shuo, Zhou, Guilin, Zhong, Jian, Wu, Zhisheng, Zhang, Baijun, Ao, Jinping, Liu, Yang

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High sensitive diamond Schottky diode temperature sensor based on selective grown diamond film von Wang, Wenqian, Liu, Zhangcheng, Wang, Xiao, Li, Yang, Ao, Jinping

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Study of the photoelectrochemical cathodic protection mechanism for steel based on the SrTiO3-TiO2 composite von Bu, Yuyu, Chen, Zhuoyuan, Ao, Jinping, Hou, Jian, Sun, Mingxian

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Ultrasoft Liquid Metal Elastomer Foams with Positive and Negative Piezopermittivity for Tactile Sensing von Yang, Jiayi, Tang, David, Ao, Jinping, Ghosh, Tushar, Neumann, Taylor V., Zhang, Dongguang, Piskarev, Egor, Yu, Tingting, Truong, Vi Khanh, Xie, Kai, Lai, Ying‐Chih, Li, Yang, Dickey, Michael D.

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Forward leakage currents in GaN p-i-n diodes von Lu, Ao, Pan, Xiaofei, Zhou, Xinjie, Li, Yang, Wang, Xiao, Ao, Jinping, Yan, Dawei

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Responsivity improvement of Ti-diamond-Ti structured UV photodetector through photocurrent gain von Liu, Zhangcheng, Zhao, Dan, Ao, Jinping, Chang, Xiaohui, Wang, Yanfeng, Fu, Jiao, Zhang, Minghui, Wang, Hongxing

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Transport and Breakdown Mechanisms of Gate Leakage Current in Lattice-Matched In₀.₁₇Al₀.₈₃N/GaN HEMTs von Ou, Bingxian, JIn, Ning, Li, Yancheng, Yan, Xiaohong, Xu, Jian, Li, Yang, Ao, Jinping, Yan, Dawei

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Improved p-GaN/AlGaN/GaN HEMTs with magnetronsputtered AlN cap layer von Jia, Mao, Hou, Bin, Yang, Ling, Xue, Zhiqiang, Xiao, Qian, Zhang, Meng, Lu, Hao, Wu, Mei, Hong, Xitong, Du, Jiale, Chang, Qingyuan, Wang, Xiao, Li, Yang, Ao, Jinping, Ma, Xiaohua, Hao, Yue

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Vertical van der Waals Integrated p‐W 0.09 Re 0.91 S 2 /GaN Heterojunction for Ultra‐High Detectivity UV Image Sensing von Yang, Yongkai, Lin, Jinpei, Huang, Yeying, Zhang, Yating, Wang, Min, Zhu, Xi, Guo, Jiachang, Fan, Kangkai, Ao, Jinping, Li, Jingbo, Liu, Xinke

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Effects of Boletus Poisoning on Estrogen Receptors and Neurotransmitters in Rats Based on ERk1/2 Pathway von Gui, Hongzhen, Wang, Zhenhui, Li, Jiming, Guo, Li, Wang, Chunxia, Liu, Sainan, Yan, Song, Ao, Jinping

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Study of the photoelectrochemical cathodic protection mechanism for steel based on the SrTiO^sub 3^-TiO^sub 2^ composite von Bu, Yuyu, Chen, Zhuoyuan, Ao, Jinping, Hou, Jian, Sun, Mingxian

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Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidation von Xu, Yang, Han, Genquan, Liu, Huan, Wang, Yibo, Liu, Yan, Ao, Jinping, Hao, Yue

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