Heterogeneous Defect Domains in Single‐Crystalline Hexagonal WS2 von Jeong, Hye Yun, Jin, Youngjo, Yun, Seok Joon, Zhao, Jiong, Baik, Jaeyoon, Keum, Dong Hoon, Lee, Hyun Seok, Lee, Young Hee

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A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2 von Jin, Youngjo, Keum, Dong Hoon, An, Sung-Jin, Kim, Joonggyu, Lee, Hyun Seok, Lee, Young Hee

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Room‐Temperature Mesoscopic Fluctuations and Coulomb Drag in Multilayer WSe2 von Doan, Manh‐Ha, Jin, Youngjo, Chau, Tuan Khanh, Joo, Min‐Kyu, Lee, Young Hee

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Oxidation Effect in Octahedral Hafnium Disulfide Thin Film von Chae, Sang Hoon, Jin, Youngjo, Kim, Tae Soo, Chung, Dong Seob, Na, Hyunyeong, Nam, Honggi, Kim, Hyun, Perello, David J, Jeong, Hye Yun, Ly, Thuc Hue, Lee, Young Hee

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Reconfigurable exciton-plasmon interconversion for nanophotonic circuits von Lee, Hyun Seok, Luong, Dinh Hoa, Kim, Min Su, Jin, Youngjo, Kim, Hyun, Yun, Seokjoon, Lee, Young Hee

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Multiple Magnetic Phases in Van Der Waals Mn‐Doped SnS2 Semiconductor von Bouzid, Houcine, Sahoo, Ramchandra, Yun, Seok Joon, Singh, Kirandeep, Jin, Youngjo, Jiang, Jinbao, Yoon, Duhee, Song, Hyun Yong, Kim, Giheon, Choi, Wooseon, Kim, Young‐Min, Lee, Young Hee

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Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors von Moon, Byoung Hee, Han, Gang Hee, Kim, Hyun, Choi, Homin, Bae, Jung Jun, Kim, Jaesu, Jin, Youngjo, Jeong, Hye Yun, Joo, Min-Kyu, Lee, Young Hee, Lim, Seong Chu

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Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides von Kim, Hyun, Han, Gang Hee, Yun, Seok Joon, Zhao, Jiong, Keum, Dong Hoon, Jeong, Hye Yun, Ly, Thuc Hue, Jin, Youngjo, Park, Ji-Hoon, Moon, Byoung Hee, Kim, Sung-Wng, Lee, Young Hee

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Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor von Bouzid, Houcine, Rodan, Steven, Singh, Kirandeep, Jin, Youngjo, Jiang, Jinbao, Yoon, Duhee, Song, Hyun Yong, Lee, Young Hee

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Coulomb drag transistor using a graphene and MoS2 heterostructure von Jin, Youngjo, Joo, Min-Kyu, Moon, Byoung Hee, Kim, Hyun, Lee, Sanghyup, Jeong, Hye Yun, Lee, Young Hee

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Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer von Doan, Manh-Ha, Jin, Youngjo, Adhikari, Subash, Lee, Sanghyub, Zhao, Jiong, Lim, Seong Chu, Lee, Young Hee

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Electrical Transport Properties of Polymorphic MoS2 von Kim, Jun Suk, Kim, Jaesu, Zhao, Jiong, Kim, Sungho, Lee, Jin Hee, Jin, Youngjo, Choi, Homin, Moon, Byoung Hee, Bae, Jung Jun, Lee, Young Hee, Lim, Seong Chu

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Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio von Lee, Si Young, Duong, Dinh Loc, Vu, Quoc An, Jin, Youngjo, Kim, Philip, Lee, Young Hee

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Optical Gain in MoS2 via Coupling with Nanostructured Substrate: Fabry–Perot Interference and Plasmonic Excitation von Jeong, Hye Yun, Kim, Un Jeong, Kim, Hyun, Han, Gang Hee, Lee, Hyangsook, Kim, Min Su, Jin, Youngjo, Ly, Thuc Hue, Lee, Si Young, Roh, Young-Geun, Joo, Won-Jae, Hwang, Sung Woo, Park, Yeonsang, Lee, Young Hee

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Multiple Magnetic Phases in Van Der Waals Mn‐Doped SnS 2 Semiconductor von Bouzid, Houcine, Sahoo, Ramchandra, Yun, Seok Joon, Singh, Kirandeep, Jin, Youngjo, Jiang, Jinbao, Yoon, Duhee, Song, Hyun Yong, Kim, Giheon, Choi, Wooseon, Kim, Young‐Min, Lee, Young Hee

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Room-Temperature Mesoscopic Fluctuations and Coulomb Drag in Multilayer WSe 2 von Doan, Manh-Ha, Jin, Youngjo, Chau, Tuan Khanh, Joo, Min-Kyu, Lee, Young Hee

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Efficient Exciton–Plasmon Conversion in Ag Nanowire/Monolayer MoS2 Hybrids: Direct Imaging and Quantitative Estimation of Plasmon Coupling and Propagation von Lee, Hyun Seok, Kim, Min Su, Jin, Youngjo, Han, Gang Hee, Lee, Young Hee, Kim, Jeongyong

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Charge Transport in MoS 2 /WSe 2 van der Waals Heterostructure with Tunable Inversion Layer von Doan, Manh-Ha, Jin, Youngjo, Adhikari, Subash, Lee, Sanghyub, Zhao, Jiong, Lim, Seong Chu, Lee, Young Hee

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A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe 2 von Jin, Youngjo, Keum, Dong Hoon, An, Sung‐Jin, Kim, Joonggyu, Lee, Hyun Seok, Lee, Young Hee

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A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe sub(2) von Jin, Youngjo, Keum, Dong Hoon, An, Sung-Jin, Kim, Joonggyu, Lee, Hyun Seok, Lee, Young Hee

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