The preparation and characterization of ultrafine Fe–Ni particles von Dong, X.L., Zhang, Z.D., Zhao, X.G., Chuang, Y.C., Jin, S.R., Sun, W.M.

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MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates von Liebich, S., Sweeney, S.J., Zimprich, M., Ludewig, P., Beyer, A., Volz, K., Stolz, W., Kunert, B., Hossain, N., Jin, S.R.

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MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications von Nattermann, L., Ludewig, P., Knaub, N., Rosemann, N.W., Hepp, T., Sterzer, E., Jin, S.R., Hild, K., Chatterjee, S., Sweeney, S.J., Stolz, W., Volz, K.

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Expression and function of the testis-predominant protein LYAR in mice von Lee, B.Y., Gwangju Institute of Science and Technology, Gwangju, Republic of korea, Jin, S.R., Gwangju Institute of Science and Technology, Gwangju, Republic of korea, Choi, H.J., Gwangju Institute of Science and Technology, Gwangju, Republic of korea, Kwon, J.T., Gwangju Institute of Science and Technology, Gwangju, Republic of korea, Kim, J.H., Gwangju Institute of Science and Technology, Gwangju, Republic of korea, Jeong, J.R., Gwangju Institute of Science and Technology, Gwangju, Republic of korea, Kwon, Y.I., Hallym University College of Medicine, Seoul, Republic of Korea, Cho, C.H., Gwangju Institute of Science and Technology, Gwangju, Republic of korea

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Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers von O'Brien, K., Sweeney, S. J., Adams, A. R., Jin, S. R., Ahmad, C. N., Murdin, B. N., Salhi, A., Rouillard, Y., Joullié, A.

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Well width dependence of the exciton lifetime in narrow GaAs/GaAlAs quantum wells von Xu, Z.Y., Jin, S.R., Luo, C.P., Xu, J.Z.

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High-pressure studies of recombination mechanisms in 1.3-[micro]m GaInNAs quantum-well lasers von Jin, S.R, Sweeney, S.J, Tomic, S, Adams, A.R, Riechert, H

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High-pressure studies of recombination mechanisms in 1.3-/spl mu/m GaInNAs quantum-well lasers von Jin, S.R., Sweeney, S.J., Tomic, S., Adams, A.R., Riechert, H.

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Characterization and magnetic properties of Fe–Co ultrafine particles von Dong, X.L, Zhang, Z.D, Jin, S.R, Kim, B.K

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High-pressure studies of recombination mechanisms in 1.3-μm GaInNAs quantum-well lasers von Jin, S.R., Sweeney, S.J., Tomic, S., Adams, A.R., Riechert, H.

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Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition von Jin, S.R, Ramsteiner, M, Grahn, H.T, Ploog, K.H, Zhu, Z.Q, Shen, D.X, Li, A.Z, Metev, P, Guido, L.J

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Data for 'GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics' von Marko, IP

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Novel In 0.49Ga 0.51P/(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy von Chen, J.X., Li, A.Z., Yang, Q.K., Lin, C., Ren, Y.C., Jin, S.R., Li, C.C., Qi, M.

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GSMBE grown In 0.49Ga 0.51P/(In)GaAs/GaAs high hole mobility transistor structures von Chen, J.X, Li, A.Z, Yang, Q.K, Lin, C, Ren, Y.C, Jin, S.R, Qi, M, Xu, H.G, Chen, X.J

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Temperature and wavelength dependence of recombination processes in 1.5 /spl mu/m InGaAlAs/InP-based lasers von Sweeney, S.J., McConville, D., Jin, S.R., Ahmad, C.N., Masse, N.F., Bouyssou, R.-X., Adams, A.R., Hanke, C.

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Kinetics of formation of polyurethane-poly(methyl methacrylate) interpenetrating polymer networks: 2. Synthesis of the rigid network in the presence of the elastomeric network von Jin, S.R., Widmaier, J.M., Meyer, G.C.

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Kinetics of formation of polyurethane-poly(methyl methacrylate) interpenetrating polymer networks by Fourier transform infra-red spectroscopy: 1. Preliminary investigations von Jin, S.R., Meyer, G.C.

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Solubility and esterification kinetics of terephthalic acid in ethylene glycol III. The effects of functional groups von Yang, K. S., An, K. H., Choi, C. N., Jin, S. R., Kim, C. Y.

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GSMBE grown In0.49Ga0.51P/(In)GaAs/GaAs high hole mobility transistor structures von Chen, J.X, Li, A.Z, Yang, Q.K, Lin, C, Ren, Y.C, Jin, S.R, Qi, M, Xu, H.G, Chen, X.J

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Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy von CHEN, J. X, LI, A. Z, YANG, Q. K, LIN, C, REN, Y. C, JIN, S. R, LI, C. C, QI, M

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