Spontaneous polarization enhancement in ferroelectric Hf0.5Zr0.5O2 using atomic oxygen defects engineering: An ab initio study von Wei, Wei, Ma, Xiaolei, Wu, Jixuan, Wang, Fei, Zhan, Xuepeng, Li, Yuan, Chen, Jiezhi

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Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2 von Wei, Wei, Zhao, Guoqing, Zhan, XuePeng, Zhang, Weiqiang, Sang, Pengpeng, Wang, Qianwen, Tai, Lu, Luo, Qing, Li, Yuan, Li, Can, Chen, Jiezhi

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Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors von Fan, Zhi-Qiang, Jiang, Xiang-Wei, Chen, Jiezhi, Luo, Jun-Wei

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Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation von Dou, Xiaoyu, Wei, Wei, Sang, Pengpeng, Tai, Lu, Li, Xiaopeng, Zhan, Xuepeng, Wu, Jixuan, Chen, Jiezhi

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Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing von Tai, Lu, Li, Xiaopeng, Dou, Xiaoyu, Sang, Pengpeng, Zhan, Xuepeng, Wu, Jixuan, Chen, Jiezhi

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Erratum: “Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation” [Appl. Phys. Lett. 124, 092901 (2024)] von Dou, Xiaoyu, Wei, Wei, Sang, Pengpeng, Tai, Lu, Li, Xiaopeng, Zhan, Xuepeng, Wu, Jixuan, Chen, Jiezhi

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Long Time-Series Mapping and Change Detection of Coastal Zone Land Use Based on Google Earth Engine and Multi-Source Data Fusion von Chen, Dong, Wang, Yafei, Shen, Zhenyu, Liao, Jinfeng, Chen, Jiezhi, Sun, Shaobo

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A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers von Wang, Jiawei, Niu, Jiebin, Shao, Bin, Yang, Guanhua, Lu, Congyan, Li, Mengmeng, Zhou, Zheng, Chuai, Xichen, Chen, Jiezhi, Lu, Nianduan, Huang, Bing, Wang, Yeliang, Li, Ling, Liu, Ming

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A Novel Density of States (DOS) for Disordered Organic Semiconductors von Qin, Dong, Chen, Jiezhi, Lu, Nianduan

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Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals von Yang, Guanhua, Shao, Yan, Niu, Jiebin, Ma, Xiaolei, Lu, Congyan, Wei, Wei, Chuai, Xichen, Wang, Jiawei, Cao, Jingchen, Huang, Hao, Xu, Guangwei, Shi, Xuewen, Ji, Zhuoyu, Lu, Nianduan, Geng, Di, Qi, Jing, Cao, Yun, Liu, Zhongliu, Liu, Liwei, Huang, Yuan, Liao, Lei, Dang, Weiqi, Zhang, Zhengwei, Liu, Yuan, Duan, Xidong, Chen, Jiezhi, Fan, Zhiqiang, Jiang, Xiangwei, Wang, Yeliang, Li, Ling, Gao, Hong-Jun, Duan, Xiangfeng, Liu, Ming

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P-type cold-source field-effect transistors with TcX2 and ReX2(X=S,Se)cold source electrodes:A computational study von Qianwen Wang, Jixuan Wu, Xuepeng Zhan, Pengpeng Sang, Jiezhi Chen

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Spatiotemporal Pattern Analysis of Land Use Functions in Contiguous Coastal Cities Based on Long-Term Time Series Remote Sensing Data: A Case Study of Bohai Sea Region, China von Ye, Yuxuan, Wang, Yafei, Liao, Jinfeng, Chen, Jiezhi, Zou, Yangfan, Liu, Yuan, Feng, Chunye

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A Novel Method to Analyze the Relationship between Thermoelectric Coefficient and Energy Disorder of Any Density of States in an Organic Semiconductor von Qin, Dong, Chen, Jiezhi, Lu, Nianduan

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Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory von Wang, Fei, Li, Yuan, Ma, Xiaolei, Chen, Jiezhi

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Defects coupling impacts on mono-layer WSe2 tunneling field-effect transistors von Wu, Jixuan, Ma, Xiaolei, Chen, Jiezhi, Jiang, Xiangwei

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Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case von Tang, Mingfeng, Zhan, Xuepeng, Chen, Jiezhi

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Thin film ferroelectric photonic-electronic memory von Zhang, Gong, Chen, Yue, Zheng, Zijie, Shao, Rui, Zhou, Jiuren, Zhou, Zuopu, Jiao, Leming, Zhang, Jishen, Wang, Haibo, Kong, Qiwen, Sun, Chen, Ni, Kai, Wu, Jixuan, Chen, Jiezhi, Gong, Xiao

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Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories von Chen, Fei, Chen, Bo, Lin, Hongzhe, Kong, Yachen, Liu, Xin, Zhan, Xuepeng, Chen, Jiezhi

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Application of an NDIR Sensor System Developed for Early Thermal Runaway Warning of Automotive Batteries von Han, Yulu, Zhao, Yongmin, Ming, Anjie, Fang, Yanyan, Fang, Sheng, Bi, Shansong, Chen, Jiezhi, Xu, Ran, Wei, Feng, Mao, Changhui

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Impacts of atomistic surface roughness on electronic transport in n-type and p-type MoS2 field-effect transistors von Ma, Xiaolei, Gong, Yuxin, Wu, Jixuan, Li, Yuan, Chen, Jiezhi

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