Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation von Sheng, Jiangkun, Qiu, Mengtong, Xu, Peng, Ding, Lili, Luo, Yinhong, Yao, Zhibin, Zhang, Fengqi, Gou, Shilong, Wang, Zujun, Xue, Yuanyuan

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Bit upset and performance degradation of NAND flash memory induced by total ionizing dose effects von Jiangkun Sheng, Peng Xu, Mengtong Qiu, Yinhong Luo, Lili Ding, Zhibin Yao, Baoping He, Shilong Gou, Wuying Ma

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Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects von Xue, Yuanyuan, Wang, Zujun, Chen, Wei, Liu, Minbo, He, Baoping, Yao, Zhibin, Sheng, Jiangkun, Ma, Wuying, Dong, Guantao, Jin, Junshan

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Proton-induced single-event effect and influence of annealing on multiple feature size NAND flash memory von Peng, Cong, Chen, Wei, Luo, Yinhong, Zhang, Fengqi, Tang, Xiaobin, Guo, Xiaoqiang, Sheng, Jiangkun, Ding, Lili, Wang, Zibo

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Dose Rate and Bias Effects on COTS Array CCDs Induce Dark Signals Increase von Zujun, Wang, Baoping, He, Zhibin, Yao, Minbo, Liu, Jiangkun, Sheng

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Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors von Wang, Zujun, Ma, Wuying, Huang, Shaoyan, Yao, Zhibin, Liu, Minbo, He, Baoping, Liu, Jing, Sheng, Jiangkun, Xue, Yuan

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Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor von Wang, Zujun, Huang, Shaoyan, Liu, Minbo, Xiao, Zhigang, He, Baoping, Yao, Zhibin, Sheng, Jiangkun

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Theoretical and experimental study of the dark signal in CMOS image sensors affected by neutron radiation from a nuclear reactor von Xue, Yuanyuan, Wang, Zujun, He, Baoping, Yao, Zhibin, Liu, Minbo, Ma, Wuying, Sheng, Jiangkun, Dong, Guantao, Jin, Junshan

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Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices von 何宝平 王祖军 盛江坤 黄绍艳

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Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests von Wang, Zujun, Chen, Wei, He, Baoping, Yao, Zhibin, Xiao, Zhigang, Sheng, Jiangkun, Liu, Minbo

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Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods von Xue, Yuanyuan, Wang, Zujun, Liu, Minbo, He, Baoping, Yao, Zhibin, Sheng, Jiangkun, Ma, Wuying, Dong, Guantao, Jin, Junshan

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Combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors von Wang, Zujun, Chen, Wei, Sheng, Jiangkun, Liu, Yan, Xiao, Zhigang, Huang, Shaoyan, Liu, Minbo

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Evaluation of the Degradation on a COTS Linear CCD Induced by Total Ionizing Dose Radiation Damage von Sheng, Jiangkun, Huang, Shaoyan, Yao, Zhibin, Ma, Wuying, He, Baoping, Wang, Zujun, Liu, Minbo

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Fixed Pattern Noise and Temporal Noise Degradation Induced by Radiation Effects in Pinned Photodiode CMOS Image Sensors von Wang, Zujun, Xue, Yuanyuan, Chen, Wei, He, Baoping, Yao, Zhibin, Ma, Wuying, Sheng, Jiangkun

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Radiation effects in backside-illuminated CMOS image sensors irradiated by high energy neutrons at CSNS-WNS von Wang, Zujun, Xue, Yuanyuan, Chen, Wei, Guo, Xiaoqiang, Yang, Xie, Jia, Tongxuan, Nie, Xu, Lai, Shankun, Huang, Gang, Yao, Zhibin, He, Baoping, Sheng, Jiangkun, Ma, Wuying, Dong, Guantao

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Radiation damage evaluation of the CCD detector induced by high energy protons von Wang, Zujun, Xue, Yuanyuan, Zhang, Fengqi, Bian, Jingying, Ma, Wuying, Yao, Zhibin, He, Baoping, Sheng, Jiangkun, Dong, Guantao

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Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates von Wang, Zujun, Ma, Yingwu, Liu, Jing, Xue, Yuan, He, Baoping, Yao, Zhibin, Huang, Shaoyan, Liu, Minbo, Sheng, Jiangkun

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Comparison of transient response characteristics in the CIS detector irradiated by gamma rays and X rays von Wang, Zujun, Xue, Yuanyuan, Li, Gang, Ma, Wuying, Zhao, Wen, Bian, Jingying, He, Baoping, Yao, Zhibin, Sheng, Jiangkun, Dong, Guantao

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Measurement and analysis of the conversion gain degradation of the CIS detectors in harsh radiation environments von Wang, Zujun, Xue, Yuanyuan, Guo, Xiaoqiang, Bian, Jingying, Yao, Zhibin, He, Baoping, Ma, Wuying, Sheng, Jiangkun, Dong, Guantao, Liu, Yan

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Single particle transient response and displacement damage in CMOS image sensors induced by high energy neutrons at Back-n in CSNS facility von Wang, Zujun, Xue, Yuanyuan, Chen, Wei, Ning, Hao, Xu, Rui, Guo, Xiaoqiang, Sheng, Jiangkun, Yao, Zhibin, He, Baoping, Ma, Wuying, Dong, Guantao

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