High Quality, Low Cost Ammonothermal Bulk GaN Substrates von Ehrentraut, Dirk, Pakalapati, Rajeev T, Kamber, Derrick S, Jiang, Wenkan, Pocius, Douglas W, Downey, Bradley C, McLaurin, Melvin, D'Evelyn, Mark P

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Highly transparent ammonothermal bulk GaN substrates von Jiang, Wenkan, Ehrentraut, Dirk, Downey, Bradley C., Kamber, Derrick S., Pakalapati, Rajeev T., Yoo, Hak Do, D’Evelyn, Mark P.

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Transparent, conductive bulk GaN by high temperature ammonothermal growth von Jiang, Wenkan, Ehrentraut, Dirk, Cook, Jonathan, Kamber, Derrick S., Pakalapati, Rajeev T., D'Evelyn, Mark P.

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Imaging Dislocations in Single-Crystal SrTiO3 Substrates by Electron Channeling von Kamaladasa, Ranga J., Jiang, Wenkan, Picard, Yoosuf N.

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Thermographic analysis of localized conductive channels in bipolar resistive switching devices von Lu, Yi Meng, Jiang, Wenkan, Noman, Mohammad, Bain, James A, Salvador, Paul A, Skowronski, Marek

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Ammonothermal Bulk GaN Substrates for Power Electronics von D'Evelyn, Mark P., Ehrentraut, Dirk, Jiang, Wenkan, Kamber, Derrick S., Downey, Bradley C., Pakalapati, Rajeev T., Yoo, Hak Do

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Electrical and optical properties of gallium vacancy complexes in ammonothermal GaN von Jiang, Wenkan, Nolan, Mackenzy, Ehrentraut, Dirk, D Evelyn, Mark P.

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Computational investigations into the operating window for memristive devices based on homogeneous ionic motion von Noman, Mohammad, Jiang, Wenkan, Salvador, Paul A., Skowronski, Marek, Bain, James A.

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Computational investigations into the operating window for memristive devices based on homogeneous ionic motion: Memristive and Resistive Devices and Systems von NOMAN, Mohammad, WENKAN JIANG, SALVADOR, Paul A, SKOWRONSKI, Marek, BAIN, James A

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OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE von D'EVELYN, Mark P, JIANG, Wenkan, EHRENTRAUT, Dirk

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OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE von D'EVELYN, Mark P, JIANG, Wenkan, EHRENTRAUT, Dirk

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Oxygen-doped group III metal nitride and method of manufacture von Jiang, Wenkan, Ehrentraut, Dirk, D'Evelyn, Mark P

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High Quality Two-Inch Ammonothermal Bulk GaN Crystals von Ehrentraut, Dirk, Jiang, Wenkan, Kamber, Derrick S, Downey, Bradley C, Pakalapati, Rajeev T, Yoo, Hak Do, D'Evelyn, Mark P

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GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING von D'EVELYN, Mark P, FUKUTOMI, Keiji, TAMAKI, Motoi, JIANG, Wenkan

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GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING von D'EVELYN, Mark P, FUKUTOMI, Keiji, TAMAKI, Motoi, JIANG, Wenkan

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Large area group III nitride crystals and substrates, methods of making, and methods of use von Cardwell, Drew W, D'Evelyn, Mark P, Jiang, Wenkan, Ehrentraut, Dirk

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OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE von D'EVELYN, Mark P, JIANG, Wenkan, EHRENTRAUT, Dirk

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Oxygen-doped group III metal nitride and method of manufacture von Jiang, Wenkan, Ehrentraut, Dirk, D'Evelyn, Mark P

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GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE von KAMBER, Derrick S, D'EVELYN, Mark P, COOK, Jonathan D, WENGER, James, JIANG, Wenkan, EHRENTRAUT, Dirk

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Group III nitride substrate, method of making, and method of use von Wenger, James, Cook, Jonathan D, Jiang, Wenkan, D'Evelyn, Mark P, Ehrentraut, Dirk, Kamber, Derrick S

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