On the operation configuration of SiGe HBTs based on power gain analysis von Ma, Z., Jiang, N.

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Base-region optimization of SiGe HBTs for high-frequency microwave power amplification von Zhenqiang Ma, Zhenqiang Ma, Ningyue Jiang, Ningyue Jiang

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Effects of proton irradiation on SiGe HBTs implemented with isolation guard rings von Jiang, Ningyue, Cho, Namki, Ma, Zhenqiang

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Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier von Qin, Guoxuan, Jiang, Ningyue, Seo, Jung-Hun, Cho, Namki, Ponchak, George E, van der Weide, Daniel, Ma, Pingxi, Stetson, Scott, Racanelli, Marco, Ma, Zhenqiang

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RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures von Qin, Guoxuan, Yan, Yuexing, Jiang, Ningyue, Ma, Jianguo, Ma, Pingxi, Racanelli, Marco, Ma, Zhenqiang

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On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions von Qin, Guoxuan, Wang, Guogong, Jiang, Ningyue, Ma, Jianguo, Ma, Zhenqiang

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Current gain of SiGe HBTs under high base doping concentrations von Jiang, Ningyue, Ma, Zhenqiang

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Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures von Zhao, Zheng, Jiang, Ningyue, Ma, Zhenqiang, Qin, Guoxuan

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An 18-GHz 300-mW SiGe power HBT von Zhenqiang Ma, Ningyue Jiang, Guogong Wang, Alterovitz, S.A.

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SiGe HBT linearity comparison between CE and CB configurations von Qin, Guoxuan, Jiang, Ningyue, Wang, Guogong, Ma, Zhenqiang

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Impact of Proton Radiation on the Large-Signal Power Performance of SiGe Power HBTs von Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Racanelli, M.

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Proton radiation tolerance of SiGe power HBTs von Jiang, Ningyue, Ma, Zhenqiang, Ma, Pingxi, Racanelli, Marco

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Microwave Flexible Electronics Directly Transformed from Foundry‐Produced, Multilayered Monolithic Integrated Circuits von Qin, Guoxuan, Jung, Yei Hwan, Zhang, Huilong, Jiang, Ningyue, Ma, Pingxi, Stetson, Scott, Racanelli, Marco, Ma, Zhenqiang

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Fundamental Difference of Power Handling Between CE and CB HBTs von Hui Li, Ningyue Jiang, Guogong Wang, Zhenqiang Ma

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CMOS Anti-Self-Biasing effect and its implication in analog/RF circuit design von Zhenqiang Ma, Huiqing Pang, Bin Zhao, Jiong Zhang, Ningyue Jiang, Hui Li

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Impact of ballast resistor implementations on power performance of SiGe power HBTs von Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Reddy, V., Racanelli, M.

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Analytical explanation of different RF characteristics exhibited with common-emitter and common-base bipolar transistors [SiGe HBT example] von Ningyue Jiang, Guogong Wang, Zhenqiang Ma

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Dc characteristics of proton radiated SiGe power HBTs at cryogenic temperature von Guoxuan Qin, Ningyue Jiang, Jianguo Ma, Zhenqiang Ma, Pingxi Ma, Racanelli, M.

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The Impact of Guard Rings on Proton Radiation Effects in SiGe HBTs von Ningyue Jiang, Zhenqiang Ma

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Impact of base doping profile on stability characteristics of SiGe HBTs von Ningyue Jiang, Zhenqiang Ma

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