Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer von Qu, Shang-Da, Xu, Ming-Sheng, Wang, Cheng-Xin, Shi, Kai-Ju, Li, Rui, Wei, Ye-Hui, Xu, Xian-Gang, Ji, Zi-Wu

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Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content von Li, Rui, Xu, Ming-Sheng, Wang, Peng, Wang, Cheng-Xin, Qu, Shang-Da, Shi, Kai-Ju, Wei, Ye-Hui, Xu, Xian-Gang, Ji, Zi-Wu

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Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells von 王强 冀子武 王帆 牟奇 郑雨军 徐现刚 吕元杰 冯志红

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Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching von 王强 冀子武 肖洪地 吕海燕 李建飞 徐现刚 吕元杰 冯志红

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Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE von 吕海燕 牟奇 张磊 吕元杰 冀子武 冯志红 徐现刚 郭其新

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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor von 吕元杰 冯志红 顾国栋 尹甲运 房玉龙 王元刚 谭鑫 周幸叶 林兆军 冀子武 蔡树军

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Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells von Li, Chang-Fu, Shi, Kai-Ju, Xu, Ming-Sheng, Xu, Xian-Gang, Ji, Zi-Wu

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Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-Ⅱ quantum wells von 冀子武 郑雨军 徐现刚

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Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature von 秦希峰 李洪珍 李双 冀子武 王绘凝 王凤翔 付刚

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Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers von Xiao, Hong-Di, Liu, Jian-Qiang, Luan, Cai-Na, Ji, Zi-Wu, Cui, Ji-Shi

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The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide von Fu, Gang, Qin, Xi Feng, Wang, Hui Ning, Ji, Zi Wu, Wang, Feng Xiang

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The Mean Projected Range and Range Straggling of Yb Ions Implanted in Silicon Crystal von Fu, Gang, Qin, Xi Feng, Wang, Hui Ning, Ji, Zi Wu, Wang, Feng Xiang

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Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO 3 (110) substrates von Bai, Hong-Liang, Liu, Guo-Lei, He, Shu-Min, Yan, Shi-Shen, Zhu, Da-Peng, Guo, Hong-Yu, Ji, Zi-Wu, Yang, Feng-Fan, Chen, Yan-Xue, Mei, Liang-Mo

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Photoluminescence properties of blue and green multiple InGaN/GaN quantum wellsProject supported by the National Natural Science Foundation of China (Grant Nos. 51672163, 51872167,... von Li, Chang-Fu, Shi, Kai-Ju, Xu, Ming-Sheng, Xu, Xian-Gang, Ji, Zi-Wu

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Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPEProject supported by the Specialized Research Fund for the Doctoral Program... von Lü, Hai-Yan, Mu, Qi, Zhang, Lei, Lü, Yuan-Jie, Ji, Zi-Wu, Feng, Zhi-Hong, Xu, Xian-Gang, Guo, Qi-Xin

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Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface von Qin, Xi-Feng, Ji, Zi-Wu, Chen, Ming, Liu, Xiu-Hong, Wang, Xue-Lin, Wang, Ke-Ming, Zhao, Qing-Tai, Fu, Gang

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Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wellsProject supported by the Specialized Research Fund for the Doctoral Progra... von Wang, Qiang, Ji, Zi-Wu, Wang, Fan, Mu, Qi, Zheng, Yu-Jun, Xu, Xian-Gang, Lü, Yuan-Jie, Feng, Zhi-Hong

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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistorProject supported by the National Natur... von Lv, Yuan-Jie, Feng, Zhi-Hong, Gu, Guo-Dong, Yin, Jia-Yun, Fang, Yu-Long, Wang, Yuan-Gang, Tan, Xin, Zhou, Xing-Ye, Lin, Zhao-Jun, Ji, Zi-Wu, Cai, Shu-Jun

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Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO sub(3)(110) substrates von Bai, Hong-Liang, Liu, Guo-Lei, He, Shu-Min, Yan, Shi-Shen, Zhu, Da-Peng, Guo, Hong-Yu, Ji, Zi-Wu, Yang, Feng-Fan, Chen, Yan-Xue, Mei, Liang-Mo

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Spin dependent transitions of charged excitons in type-II quantum wells von Ji, ZiWu, Yamamoto, Hiroaki, Mino, Hirofumi, Akimoto, Ryoichi, Takeyama, Shojiro

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