Effect of large work function modulation of MoS2 by controllable chlorine doping using a remote plasma von Kim, Ki Hyun, Kim, Ki SeoK, Ji, Jou Jin, Moon, Inyong, Heo, Keun, Kang, Dong-Ho, Kim, Kyong Nam, Yoo, Won Jong, Park, Jin-Hong, Yeom, Geun Young

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Selective etching of silicon nitride over silicon oxide using ClF3/H2 remote plasma von Lee, Won Oh, Kim, Ki Hyun, Kim, Doo San, Ji, You Jin, Kang, Ji Eun, Tak, Hyun Woo, Park, Jin Woo, Song, Han Dock, Kim, Ki Seok, Cho, Byeong Ok, Kim, Young Lae, Yeom, Geun Young

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Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma von Kim, Ki Seok, Ji, You-Jin, Kim, Ki-Hyun, Kang, Ji-Eun, Ellingboe, Albert Rogers, Yeom, Geun Young

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Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction von Kim, Ki Seok, Ji, You Jin, Kim, Ki Hyun, Choi, Seunghyuk, Kang, Dong-Ho, Heo, Keun, Cho, Seongjae, Yim, Soonmin, Lee, Sungjoo, Park, Jin-Hong, Jung, Yeon Sik, Yeom, Geun Young

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Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source von Kim, Ki Seok, Kim, Ki Hyun, Ji, You Jin, Park, Jin Woo, Shin, Jae Hee, Ellingboe, Albert Rogers, Yeom, Geun Young

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Atomic layer etching of graphene through controlled ion beam for graphene-based electronics von Kim, Ki Seok, Ji, You Jin, Nam, Yeonsig, Kim, Ki Hyun, Singh, Eric, Lee, Jin Yong, Yeom, Geun Young

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Silicon nitride deposited by laser assisted plasma enhanced chemical vapor deposition for next generation organic electronic devices von Kim, Ki Hyun, Kim, Ki Seok, Ji, You Jin, Kang, Ji Eun, Yeom, Geun Young

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Nitriding process for next-generation semiconductor devices by VHF (162 MHz) multi-tile push-pull plasma source von Ji, You Jin, Kim, Ki Seok, Kim, Ki Hyun, Ellingboe, Albert Rogers, Yeom, Geun Young

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Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene von Kim, Hyunseok, Lu, Kuangye, Liu, Yunpeng, Kum, Hyun S, Kim, Ki Seok, Qiao, Kuan, Bae, Sang-Hoon, Lee, Sangho, Ji, You Jin, Kim, Ki Hyun, Paik, Hanjong, Xie, Saien, Shin, Heechang, Choi, Chanyeol, Lee, June Hyuk, Dong, Chengye, Robinson, Joshua A, Lee, Jae-Hyun, Ahn, Jong-Hyun, Yeom, Geun Young, Schlom, Darrell G, Kim, Jeehwan

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Plasma Enhanced Atomic Layer Deposition of Silicon Nitride for Two Different Aminosilane Precursors Using Very High Frequency (162 MHz) Plasma Source von Ji, You Jin, Kim, Hae In, Choi, Seung Yup, Kang, Ji Eun, Ellingboe, Albert Rogers, Chandra, Haripin, Lee, Chang-Won, Yeom, Geun Young

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Highly selective etching of SiN x over SiO 2 using ClF 3 /Cl 2 remote plasma von Yoo, Seongjae, Kang, Ji Eun, Ji, You Jin, Tak, Hyun Woo, Cho, Byeong Ok, Lae Kim, Young, Lee, Ki Chan, Chun, Jin Sung, Kim, Yongil, Kim, Dong-Woo, Yeom, Geun Young

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Highly selective etching of SiNx over SiO2 using ClF3/Cl2 remote plasma von Yoo, Seong Jae, Kang, Ji Eun, Ji, You Jin, Tak, Hyun Woo, Cho, Byeong Ok, Kim, Young Lae, Lee, Ki Chan, Chun, Jin Sung, Kim, Yongil, Kim, Dong Woo, Yeom, Geun Young

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Plasma enhanced atomic layer deposition of silicon nitride using magnetized very high frequency plasma von Ji, You Jin, Kim, Hae In, Kang, Ji Eun, Choi, Seung Yup, Kim, Ki Hyun, Kim, Doo San, Ellingboe, A R, Kim, Hye Min, Yeom, Geun Young, Kim, Dong Woo

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High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process von Kim, Hyunseok, Liu, Yunpeng, Lu, Kuangye, Chang, Celesta S., Sung, Dongchul, Akl, Marx, Qiao, Kuan, Kim, Ki Seok, Park, Bo-In, Zhu, Menglin, Suh, Jun Min, Kim, Jekyung, Jeong, Junseok, Baek, Yongmin, Ji, You Jin, Kang, Sungsu, Lee, Sangho, Han, Ne Myo, Kim, Chansoo, Choi, Chanyeol, Zhang, Xinyuan, Choi, Hyeong-Kyu, Zhang, Yanming, Wang, Haozhe, Kong, Lingping, Afeefah, Nordin Noor, Ansari, Mohamed Nainar Mohamed, Park, Jungwon, Lee, Kyusang, Yeom, Geun Young, Kim, Sungkyu, Hwang, Jinwoo, Kong, Jing, Bae, Sang-Hoon, Shi, Yunfeng, Hong, Suklyun, Kong, Wei, Kim, Jeehwan

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Radical flux control in reactive ion beam etching (RIBE) by dual exhaust system von Kim, Doo San, Jang, Yun Jong, Kim, Ye Eun, Gil, Hong Seong, Kim, Hee Ju, Ji, You Jin, Kim, Hyung Yong, Kim, In Ho, Chae, Myoung Kwan, Park, Jong Chul, Yeom, Geun Young

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Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH 4 Plasma von Kim, Ki Seok, Ji, You-Jin, Kim, Ki-Hyun, Kang, Ji-Eun, Ellingboe, Albert Rogers, Yeom, Geun Young

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Atomic Layer Engineering of TMDs by Modulation of Top Chalcogen Atoms: For Electrical Contact and Chemical Doping von Kim, Ki Seok, Kim, Ki Hyun, Kang, Ji Eun, Lee, Ju-Hee, Ji, You Jin, Yeom, Geun Young

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Highly selective etching of SiNxover SiO2using ClF3/Cl2remote plasma von Yoo, Seong Jae, Kang, Ji Eun, Ji, You Jin, Tak, Hyun Woo, Cho, Byeong Ok, Kim, Young Lae, Lee, Ki Chan, Chun, Jin Sung, Kim, Yongil, Kim, Dong Woo, Yeom, Geun Young

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(Invited) Layer Control of 2D-MoS 2 by Atomic Layer Etching and Its Device Characteristics von Kim, Ki Seok, Kim, Ki Hyun, Ji, You Jin, Yeom, Geun Young

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Low temperature silicon nitride grown by very high frequency (VHF, 162MHz) plasma enhanced atomic layer deposition with floating multi-tile electrode von Ji, You Jin, Kim, Hae In, Kim, Ki Hyun, Kang, Ji Eun, Kim, Doo San, Kim, Ki Seok, Ellingboe, A.R., Kim, Dong Woo, Yeom, Geun Young

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