New Observation of Mobility and Reliability Dependence on Mechanical Film Stress in Strained Silicon CMOSFETs von HAN, In-Shik, JI, Hee-Hwan, YOU, Ook-Sang, CHOI, Won-Ho, LIM, Jung-Eun, HWANG, Kyong-Jin, PARK, Sung-Hyung, LEE, Heui-Seung, KIM, Dae-Byung, LEE, Hi-Deok

Volltext

Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications von Younghwan Son, Chang-Ki Baek, In-Shik Han, Han-Soo Joo, Tae-Gyu Goo, Ooksang Yoo, Wonho Choi, Hee-Hwan Ji, Hi-Deok Lee, Kim, D.M.

Volltext

The Effect of Triple Capping Layer (Ti∕Ni∕TiN) on the Electrical and Structural Properties of Nickel Monosilicide von Kim, Yong-Jin, Choi, Chel-Jong, Jung, Ran-Ju, Oh, Soon-Young, Yun, Jang-Gn, Lee, Won-Jae, Ji, Hee-Hwan, Wang, Jin-Suk, Lee, Hi-Deok

Volltext

Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor's... von Han, In-Shik, Ji, Hee-Hwan, Goo, Tae-Gyu, Yoo, Ook-Sang, Choi, Won-Ho, Kim, Yong-Goo, Park, Sung-Hyung, Lee, Heui-Seung, Kang, Young-Seok, Kim, Dae-Byung, Lee, Hi-Deok

Volltext

Co-Induced Low-Temperature Silicidation of Ni Germanosilicide Using NiPt Alloy and the Effect of Ge Ratio on Thermal Stability von YUN, Jang-Gn, OH, Soon-Young, CHA, Han-Seob, HU, Sang-Bum, LEE, Jeong-Gun, LEE, Hi-Deok, HUANG, Bin-Feng, KIM, Yong-Jin, JI, Hee-Hwan, KIM, Yong-Goo, PARK, Sung-Hyung, LEE, Heui-Seung, KIM, Dae-Byung, KIM, Ui-Sik

Volltext

Thermal Stability Improvement of Ni-Germano silicide Utilizing Ni-Pd Alloy for Nanoscale CMOS Technology von Kim, Y.-J., Oh, S.-Y., Yun, J.-G., Lee, W.-J., Zhang, Y.-Y., Zhong, Z., Jung, S.-Y., Ji, H.-H., Cha, H.-S., Kim, Y.-C., Wang, J.-S., Lee, H.-D.

Volltext

Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology von Bae, Mi-Suk, Ji, Hee-Hwan, Lee, Hun-Jin, Oh, Soon-Young, Huang, Bin-Feng, Yun, Jang-Gn, Wang, Jin-Suk, Park, Seong-Hyung, Lee, Hi-Deok

Volltext

Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure von Kim, Yong Jin, Choi, Chel Jong, Wang, Jin Suk, Ji, Hee Hwan, Lee, Hi Deok, Oh, Soon Young, Yun, Jang Gn, Lee, Won Jae

Volltext

Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs von Ji, Hee-Hwan, Park, Sung-Hyung, Kim, Yong-Goo, Wang, Jin-Suk, Lee, Hi-Deok, Baek, Seong-Hak, Kim, Kyoung-Cheol, Song, Byeung-Soo, Bae, Hui-Kyoung, Lee, Heui-Seung, Kang, Young-Seok, Kim, Dae-Byung, Park, Jin-Won

Volltext

Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer von YUN, Jang-Gn, OH, Soon-Young, HU, Sang-Bum, LEE, Jeong-Gun, BAEK, Sung-Kweon, HWANG, Hyun-Sang, LEE, Hi-Deok, HUANG, Bin-Feng, JI, Hee-Hwan, KIM, Yong-Goo, PARK, Seong-Hyung, LEE, Heui-Seung, KIM, Dae-Byung, KIM, Ui-Sik, CHA, Han-Seob

Volltext

Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology von Park, Sung Hyung, Kim, Yong Goo, Ji, Hee Hwan, Lee, Hi Deok, Kim, Jae Sung, Baek, Seong Hak, Chang, Hoon, Lee, Jin Hyuk, Kim, Kyoung Cheol, Song, Byeung Soo, Bae, Hui Koung, Kim, Myung Ok, Lee, Heui Seung, Kang, Young Seok, Kim, Dae Byung

Volltext

Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology von Lee, Hi-Deok, Bae, Mi-Suk, Ji, Hee-Hwan, Lee, Key-Min, Park, Seong-Hyun, Jang, Myoung-Jun, Lee, Joo-Hyoung, Yoon, Ki-Seok, Choi, Jung-Hoon, Park, Geun-Suk, Kang, Keun-Koo, Park, Young-Jin

Volltext

Novel test structures for on-chip characterization of coupling capacitance variation by in- and anti-phase crosstalk in multi-level metallization von Hi-Deok Lee, Hee-Hwan Ji, In-Sik Han, Han-Soo Joo, Dae-Mann Kim, Sung-Hyung Park, Heui-Seung Lee, Won-Joon Ho, Dae-Byung Kim, Ihl-Hyun Cho, Sang-Young Kim, Sung-Bo Hwang, Jeong-Gon Lee, Jin-Won Park

Volltext

Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications von Oh, Soon-Young, Yun, Jang-Gn, Kim, Yong-Jin, Lee, Won-Jae, Ji, Hee-Hwan, Tuya, Agchbayar, Kim, Do-Woo, Cha, Han-Seob, Cho, Yoo-Jeong, Han, Kil-Jin, Kim, Yeong-Cheul, Wang, Jin-Suk, Lee, Hi-Deok

Volltext

Dependency of 1/f Noise on Initial Oxidation Method in Nano-CMOS Technology von Han, In Shik, Hwang, Sung Bo, Lee, Jeong Gun, Kim, Kyung Min, Kang, Young Seok, Ji, Hee Hwan, Cho, Ihl Hyun, Kim, Dae Byung, Kim, Sang Young, Lee, Hi Deok, Park, Seong Hyung, Lee, Chang Young, Lee, Hee Seung

Volltext

Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation von Yun, Jang-Gn, Oh, Soon-Young, Ji, Hee-Hwan, Huang, Bin-Feng, Park, Young-Ho, Wang, Jin-Suk, Park, Seong-Hyung, Bae, Tae-Sung, Lee, Hi-Deok

Volltext

Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs von Younghwan Son, Chang-Ki Baek, Bomsoo Kim, In-Shik Han, Tae-Gyu Goo, Ooksang You, Wonho Choi, Hee-Hwan Ji, Hi-Deok Lee, Kim, D.M.

Volltext bestellen

Abnormal Oxidation of NiSi Formed on Arsenic-Doped Substrate von Yun, Jang-Gn, Ji, Hee-Hwan, Oh, Soon-Young, Bae, Mi-Suk, Lee, Hun-Jin, Huang, Bin-Feng, Kim, Yong-Goo, Wang, Jin-Suk, Sung, Nak-Gyun, Hu, Sang-Bum, Lee, Jeong-Gun, Park, Seong-Hyung, Lee, Hee-Seung, Ho, Won-Joon, Kim, Dae-Byung, Lee, Hi-Deok

Volltext

Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology von Oh, Soon-Young, Yun, Jang-Gn, Huang, Bin-Feng, Kim, Yong-Jin, Ji, Hee-Hwan, Kim, Ui-Sik, Cha, Han-Seob, Heo, Sang-Bum, Lee, Jeong-Gun, Wang, Jin-Suk, Lee, Hi-Deok

Volltext

Semiconductor device with junction FET transistors having multi pinch-off voltages von Hong, Song Hwa, Ji, Hee Hwan, Kim, Ji Man

Volltext bestellen