GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates von Shoou-Jinn Chang, Jhou, Y.D., Lin, Y.C., Wu, S.L., Chen, C.H., Wen, T.C., Wu, L.W.

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Nitride-based LEDs with p-InGaN capping layer von Chang, S.J., Chen, C.H., Chang, P.C., Su, Y.K., Chen, P.C., Jhou, Y.D., Hung, H., Wang, S.M., Luang, B.R.

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GaN Metal-Semiconductor-Metal Photodetectors With SiN/GaN Nucleation Layer von Su, Y.K., Chang, S.J., Jhou, Y.D., Wu, S.L., Liu, C.H.

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Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures von Jhou, Y.D., Chen, C.H., Chuang, R.W., Chang, S.J., Su, Y.K., Chang, P.C., Chen, P.C., Hung, H., Wang, S.M., Yu, C.L.

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GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes von Jhou, Y.D., Chen, C.H., Chang, S.J., Su, Y.K., Chang, P.C., Chen, P.C., Hung, H., Yu, C.L., Wang, S.M., Wu, M.H.

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