The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE von Wong, Yuen-Yee, Chang, Edward Yi, Yang, Tsung-Hsi, Chang, Jet-Rung, Ku, Jui-Tai, Hudait, Mantu K., Chou, Wu-Ching, Chen, Micheal, Lin, Kung-Liang

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Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates von Chiu, Ching-Hsueh, Tu, Po-Min, Lin, Chien-Chung, Lin, Da-Wei, Li, Zhen-Yu, Chuang, Kai-Lin, Chang, Jet-Rung, Lu, Tien-Chang, Zan, Hsiao-Wen, Chen, Chiang-Yao, Kuo, Hao-Chung, Wang, Shing-Chung, Chang, Chun-Yen

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Multifacet Microrod Light-Emitting Diode With Full Visible Spectrum Emission von Li, Yun-Jing, Chang, Jet-Rung, Chang, Shih-Pang, Lin, Bo-Wen, Yeh, Yen-Hsien, Kuo, Hao-Chung, Cheng, Yuh-Jen, Chang, Chun-Yen

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Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates von Wong, Yuen-Yee, Huang, Wei-Ching, Trinh, Hai-Dang, Yang, Tsung-Hsi, Chang, Jet-Rung, Chen, Micheal, Chang, Edward Yi

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Growth of free-standing GaN layer on Si(1 1 1) substrate von Yang, Tsung Hsi, Ku, Jui Tai, Chang, Jet-Rung, Shen, Shih-Guo, Chen, Yi-Cheng, Wong, Yuen Yee, Chou, Wu Ching, Chen, Chien-Ying, Chang, Chun-Yen

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The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy von Wong, Yuen-Yee, Chang, Edward Yi, Yang, Tsung-Hsi, Chang, Jet-Rung, Chen, Yi-Cheng, Ku, Jui-Tai, Lee, Ching-Ting, Chang, Chun-Wei

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Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier von Tu, Po-Min, Chang, Chun-Yen, Huang, Shih-Cheng, Chiu, Ching-Hsueh, Chang, Jet-Rung, Chang, Wei-Ting, Wuu, Dong-Sing, Zan, Hsiao-Wen, Lin, Chien-Chung, Kuo, Hao-Chung, Hsu, Chih-Peng

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Electrically driven green, olivine, and amber color nanopyramid light emitting diodes von Chang, Shih-Pang, Chang, Jet-Rung, Sou, Kuok-Pan, Liu, Mei-Chun, Cheng, Yuh-Jen, Kuo, Hao-Chung, Chang, Chun-Yen

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Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy von Ku, Jui-Tai, Yang, Tsung-Hsi, Chang, Jet-Rung, Wong, Yuen-Yee, Chou, Wu-Ching, Chang, Chun-Yen, Chen, Chiang-Yao

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InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes von Li, Yun-Jing, Chang, Jet-Rung, Chang, Shih-Pang, Sou, Kuok-Pan, Cheng, Yuh-Jen, Kuo, Hao-Chung, Chang, Chun-Yen

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Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy von Wong, Yuen-Yee, Chang, Edward Yi, Wu, Yue-Han, Hudait, Mantu K., Yang, Tsung-Hsi, Chang, Jet-Rung, Ku, Jui-Tai, Chou, Wu-Ching, Chen, Chiang-Yao, Maa, Jer-Shen, Lin, Yueh-Chin

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Investigation of efficiency droop in GaN-based UV LEDs with N-type AlGaN underlayer von Shun-Kuei Yang, Po-Min Tu, Shih-Cheng Huang, Ya-wen Lin, Chih-Peng Hsu, Jet-Rung Chang, Chun-Yen Chang

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Study of efficiency droop in InGaN-based near-UV LEDs with quaternary InAlGaN barrier von Po-Min Tu, Shih-Cheng Huang, Ya-wen Lin, Shun-Kuei Yang, Chih-Peng Hsu, Jet-Rung Chang, Chun-Yen Chang

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Effect of Nitridation on the Regrowth Interface of AIGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates von WONG, Yuen-Yee, HUANG, Wei-Ching, TRINH, Hai-Dang, YANG, Tsung-Hsi, CHANG, Jet-Rung, CHEN, Micheal, EDWARD YI CHANG

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Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier von Ching-Hsueh Chiu, Po-Min Tu, Chun-Yen Chang, Shih-Cheng Huang, Jet-Rung Chang, Hsiao-Wen Zan, Hao-Chung Kuo, Chih-Peng Hsu

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The effect of ΑlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy von WONG, Yuen-Yee, CHANG, Edward Yi, YANG, Tsung-Hsi, CHANG, Jet-Rung, CHEN, Yi-Cheng, KU, Jui-Tai, LEE, Ching-Ting, CHANG, Chun-Wei

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Growth and Characterization of MBE-GaN on Si (111) using AlN/α-Si3N4 Buffer Structure von Chang, Jet Rung, Yang, Tsung Hsi, Chen, Yi Cheng, Ku, Jui Tai, Chang, Chun Yen

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GaN Growth on Si(111) Using Simultaneous AlN/α-Si 3 N 4 Buffer Structure von Chang, Jet Rung, Yang, Tsung Hsi, Ku, Jui Tai, Shen, Shih Guo, Chen, Yi Cheng, Wong, Yuen Yee, Chang, Chun Yen

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Formation method of semiconductor device with gate all around structure von Chang, Jet-Rung, Lin, Yen-Po, Yu, Te-An, Chou, Hung-Ju, Kuo, Jiun-Ming

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FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH GATE ALL AROUND STRUCTURE von CHOU, Hung-Ju, YU, Te-An, CHANG, Jet-Rung, KUO, Jiun-Ming, LIN, Yen-Po

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