Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors von Jeon, Dae-Young, Mouis, Mireille, Barraud, Sylvain, Ghibaudo, Gerard

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Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors von Jeon, Dae-Young

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Comparison of blood loss between intra-articular microporous polysaccharide hemospheres powder and tranexamic acid following primary total knee arthroplasty von Jeon, Young-Dae, Cha, Jae-Ryong, Oh, Jae-Min, Kim, Sang-Gon, Park, Ki-Bong

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Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions von Lee, Tae Yoon, Kim, Yoon-Jeong, Ahn, Seokhoon, Jeon, Dae-Young

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Carbon nanotube fiber-based high-performance force and position sensors for smart fabrics and the Internet of things von Jeon, Dae-Young, Park, Jimin, Lee, Changwoo, Kim, Seung Min

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Low-temperature electrical characterization of junctionless transistors von Jeon, Dae-Young, Park, So Jeong, Mouis, Mireille, Barraud, Sylvain, Kim, Gyu-Tae, Ghibaudo, Gérard

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Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors von Jeon, Dae-Young, Koh, Yumin, Cho, Chu-Young, Park, Kyung-Ho

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Web-drive based source measure unit for automated evaluations of ionic liquid-gated MoS2 transistors von Park, So Jeong, Jeon, Dae-Young, Moon, Young-Sun, Park, Il-Hoo, Kim, Gyu-Tae

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High-performance nanogap electrode-based impedimetric sensor for direct DNA assays von Lee, Hyunjung, Keem, Joo Oak, Cho, Hyunmin, Choi, Jong Min, Chung, Won Seok, Jeon, Dae-Young, Lee, Dong Su, Shin, Yong-Beom

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The structural and electrical evolution of graphene by oxygen plasma-induced disorder von Kim, Dong Chul, Jeon, Dae-Young, Chung, Hyun-Jong, Woo, YunSung, Shin, Jai Kwang, Seo, Sunae

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Piezo-impedance response of carbon nanotube/polydimethylsiloxane nanocomposites von Jeon, Dae-Young, Kim, Heeju, Lee, Min Wook, Park, So Jeong, Kim, Gyu-Tae

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Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors von Jeon, Dae-Young, Lee, Dong Su, Lee, Seoung-Ki, Park, Min, Park, So Jeong, Kim, Gyu-Tae

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Stable water-floating transistor with recyclability von Yu, Ilhwan, Quyen, Vu Thi, Ko, Jaehyoung, Lee, Dong Su, Jeon, Dae-Young, Joo, Yongho

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A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors von Jeon, Dae-Young, Park, So Jeong, Mouis, Mireille, Barraud, Sylvain, Kim, Gyu-Tae, Ghibaudo, Gerard

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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms von Jeon, Dae-Young, Park, So Jeong, Mouis, Mireille, Barraud, Sylvain, Kim, Gyu-Tae, Ghibaudo, Gérard

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Hybrid dielectrics composed of Al2O3 and phosphonic acid self-assembled monolayers for performance improvement in low voltage organic field effect transistors von Jang, Sukjae, Son, Dabin, Hwang, Sunbin, Kang, Minji, Lee, Seoung-Ki, Jeon, Dae-Young, Bae, Sukang, Lee, Sang Hyun, Lee, Dong Su, Kim, Tae-Wook

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Less mobility degradation induced by transverse electric-field in junctionless transistors von Park, So Jeong, Jeon, Dae-Young, Montes, Laurent, Mouis, Mireille, Barraud, Sylvain, Kim, Gyu-Tae, Ghibaudo, Gérard

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Reconfigurable Si Nanowire Nonvolatile Transistors von Park, So Jeong, Jeon, Dae‐Young, Piontek, Sabrina, Grube, Matthias, Ocker, Johannes, Sessi, Violetta, Heinzig, André, Trommer, Jens, Kim, Gyu‐Tae, Mikolajick, Thomas, Weber, Walter M.

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Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts von Park, Jimin, Son, Jangyup, Park, Sang Kyu, Lee, Dong Su, Jeon, Dae-Young

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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors von Jeon, Dae-Young, Park, So Jeong, Mouis, Mireille, Barraud, Sylvain, Kim, Gyu-Tae, Ghibaudo, Gérard

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