Prospects and applications of volatile memristors von Kim, Dahye, Jeon, Beomki, Lee, Yunseok, Kim, Doohyung, Cho, Youngboo, Kim, Sungjun

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Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses von Mahata, Chandreswar, Pyo, Juyeong, Jeon, Beomki, Ismail, Muhammad, Kang, Myounggon, Kim, Sungjun

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Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices von Lee, Yunseok, Jang, Jiung, Jeon, Beomki, Lee, Kisong, Chung, Daewon, Kim, Sungjun

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Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO2/TaOx/TaN Devices von Park, Minsu, Jeon, Beomki, Park, Jongmin, Kim, Sungjun

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Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices von Jeon, Beomki, Kim, Sungjun

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Reservoir Computing for Temporal Data Processing Using Resistive Switching Memory Devices Based on ITO Treated With O 2 Plasma von Lee, Jung-Kyu, Kwon, Osung, Jeon, Beomki, Kim, Sungjun

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Artificial synapses based on 2D-layered palladium diselenide heterostructure dynamic memristor for neuromorphic applications von Mahata, Chandreswar, Ju, Dongyeol, Das, Tanmoy, Jeon, Beomki, Ismail, Muhammad, Kim, Sangwan, Kim, Sungjun

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Reservoir Computing for Temporal Data Processing Using Resistive Switching Memory Devices Based on ITO Treated With O2 Plasma von Lee, Jung-Kyu, Kwon, Osung, Jeon, Beomki, Kim, Sungjun

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Forming-Free Tunable Analog Switching in WO x /TaO x Heterojunction for Emulating Electronic Synapses von Mahata, Chandreswar, Pyo, Juyeong, Jeon, Beomki, Ismail, Muhammad, Kang, Myounggon, Kim, Sungjun

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Forming-Free Tunable Analog Switching in WO[sub.x]/TaO[sub.x] Heterojunction for Emulating Electronic Synapses von Mahata, Chandreswar, Pyo, Juyeong, Jeon, Beomki, Ismail, Muhammad, Kang, Myounggon, Kim, Sungjun

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Resistive Switching Characteristics of Alloyed AlSiO[sub.x] Insulator for Neuromorphic Devices von Lee, Yunseok, Jang, Jiung, Jeon, Beomki, Lee, Kisong, Chung, Daewon, Kim, Sungjun

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Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices von Mahata, Chandreswar, Pyo, Juyeong, Jeon, Beomki, Ismail, Muhammad, Moon, Janghyuk, Kim, Sungjun

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Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO 2 /TaOx/TaN Devices von Park, Minsu, Jeon, Beomki, Park, Jongmin, Kim, Sungjun

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Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO[sub.2]/TaOx/TaN Devices von Park, Minsu, Jeon, Beomki, Park, Jongmin, Kim, Sungjun

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Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction von Lee, Yoonseok, Jeon, Beomki, Cho, Youngboo, Kim, Jihyung, Shim, Wonbo, Kim, Sungjun

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