Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices von Jenny, Jason R., Calus, M.R., Tsvetkov, Valeri F., McD. Hobgood, H., Glass, R.C., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H.

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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances von Jenny, Jason R., Brady, M.F., McD. Hobgood, H., Calus, M.R., Tsvetkov, Valeri F., Leonard, R.T., Glass, R.C., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H.

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Sublimation-Grown Semi-Insulating SiC for High Frequency Devices von McD. Hobgood, H., Tsvetkov, Valeri F., Leonard, R.T., Malta, D.P., Brixius, W.H., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H., Jenny, Jason R., Brady, M.F., Glass, R.C., Allen, S.T., Palmour, John W.

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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production von Brixius, W.H., McD. Hobgood, H., Tsvetkov, Valeri F., Leonard, R.T., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H., Jenny, Jason R., Brady, M.F., Henshall, D., Fechko, G., Glass, R.C., Allen, S.T., Palmour, John W.

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100 mm 4HN-SiC Wafers with Zero Micropipe Density von Tsvetkov, Valeri F., Zilli, R., Leonard, R.T., Khlebnikov, I., Paisley, Michael J., Malta, D.P., Powell, Adrian R., Carter Jr, Calvin H., Jenny, Jason R., Hobgood, H.McD, Basceri, C., Brady, M.F., Khlebnikov, Y., Balakrishna, Vijay, Deyneka, E.

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Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications von Jenny, Jason R., Brady, M.F., Henshall, D., McD. Hobgood, H., Brixius, W.H., Tsvetkov, Valeri F., Fechko, G., Leonard, R.T., Glass, R.C., Malta, D.P., Müller, Stephan G., Carter Jr, Calvin H.

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Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates von Jenny, Jason R., Tsvetkov, V.T., McD. Hobgood, H., Malta, D.P., Das, Mrinal K., Carter Jr, Calvin H.

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RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates von Jenny, Jason R., Alcorn, T.S., Hagleitner, H., Henning, Jason, Janke, C., Ward, A., Allen, S.T., Sriram, Saptharishi, Sumakeris, Joseph J., Wieber, K.

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Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates von Oliver, James D., Somanchi, A., Orazio, F., Carlson, E.P., Emorhokpor, Ejiro, Wan, Jian Wei, Dudley, Michael, Sandhu, R., Weber, Arnd Dietrich, Jenny, Jason R., Blew, A., Basceri, C., Burkeen, F., Goorsky, M.S., Velidandla, V., Vetter, William M.

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HIGH VOLTAGE SILICON CARBIDE MOS-BIPOLAR DEVICES HAVING BI-DIRECTIONAL BLOCKING CAPABILITIES AND METHODS OF FABRICATING THE SAME von HOBGOOD, Hudson McDonald, AGARWAL, Anant K, JENNY, Jason R, PALMOUR, John W, RYU, Sei-Hyung, DAS, Mrinal K

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HIGH VOLTAGE SILICON CARBIDE DEVICES HAVING BI-DIRECTIONAL BLOCKING CAPABILITIES AND METHODS OF FABRICATING THE SAME von HOBGOOD, Hudson, McDonald, PALMOUR, John, W, RYU, Sei-Hyung, JENNY, Jason, R, AGARWAL, Anant, K, DAS, Mrinal, K

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SILICON CARBIDE DEVICE AND METHOD OF FABRICATING THE SAME von HOBGOOD, Hudson McDonald, AGARWAL, Anant K, JENNY, Jason R, PALMOUR, John W, RYU, Sei-Hyung, DAS, Mrinal K

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MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE von BASCERI, Cem, BALAKRISHNA, Vijay, TSVETKOV, Valeri, JENNY, Jason R, KHLEBNIKOV, Yuri, BALKAS, Cengiz, POWELL, Adrian R, KHLEBNIKOV, Igor, CARTER, Calvin H., Jr, HOBGOOD, Hudson McD, SILAN, Murat N, LEONARD, Robert T

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One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer von JENNY JASON R

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Deep Levels in SiC:V by High Temperature Transport Measurements von Solomon, J.S., McD. Hobgood, H., Perrin, Ronald, Ahoujja, M., Smith, S.R., Jenny, Jason R., Roth, Matthew D., Augustine, G., Landis, G., Balakrishna, Vijay, Mitchel, W.C., Evwaraye, A.O., Goldstein, Jonathan

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One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer von JENNY JASON R

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Double side polished wafer scratch inspection tool von LEONARD ROBERT T, JENNY JASON R

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Micropipe-free silicon carbide and related method of manufacture von BASCERI CEM, BALAKRISHNA VIJAY, KHLEBNIKOV IGOR, LEONARD ROBERT T, HOBGOOD HUDSON MCD, SILAN MURAT N, CARTER, JR. CALVIN H, POWELL ADRIAN R, BALKAS CENGIZ, TSVETKOV VALERI T, KHLEBNIKOV YURI, JENNY JASON R

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Process for producing silicon carbide crystals having increased minority carrier lifetimes von TSVETKOV VALERI F, HOBGOOD HUDSON M, DAS MRINAL K, CARTER, JR. CALVIN H, MALTA DAVID P, JENNY JASON R

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Optical and Electrical Characterization of Vandium-Doped SiC von Jenny, Jason R

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