Anomalous diffusion of fluorine in silicon von JENG, S.-P, MA, T.-P, CANTERI, R, ANDERLE, M, RUBLOFF, G. W

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Loudness growth in 1/2-octave bands (LGOB) : a procedure for the assessment of loudness von ALLEN, J. B, HALL, J. L, JENG, P. S

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An in situ calibration for hearing thresholds von Withnell, Robert H., Jeng, Patricia S., Waldvogel, Kelly, Morgenstein, Kari, Allen, Jont B.

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The impact of scaling on metal thickness for advanced back end of line interconnects von Chen, Hsueh-Chung, Fan, Su-Chen, Lin, Jian-Hong, Cheng, Yi-Lung, Jeng, Shin-Puu, Wu, Chii-Ming

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High density 3D integration using CMOS foundry technologies for 28 nm node and beyond von Lin, J C, Chiou, W C, Yang, K F, Chang, H B, Lin, Y C, Liao, E B, Hung, J P, Lin, Y L, Tsai, P H, Shih, Y C, Wu, T J, Wu, W J, Tsai, F W, Huang, Y H, Wang, T Y, Yu, C L, Chang, C H, Chen, M F, Hou, S Y, Tung, C H, Jeng, S P, Yu, D C H

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Evaluation of human middle ear function via an acoustic power assessment von Allen, Jont B, Jeng, Patricia S, Levitt, Harry

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3D IC heterogeneous integration of GPS RF receiver, baseband, and DRAM on CoWoS with system BIST solution von Liao, W. S., Chen, H. N., Yen, K. K., Yeh, E. H., Kuo, F. W., Yeh, T. J., Kuo, F., Jou, C. P., Liu, S., Hsueh, F. L., Lin, H. C., Peng, C. N., Wang, M. J., Wu, W. C., Hu, S. P., Chen, M. F., Hou, S. Y., Jeng, S. P., Yu, C. H., Yee, K. C., Doug Yu

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TSV process optimization for reduced device impact on 28nm CMOS von Yu, C. L., Chang, C. H., Wang, H. Y., Chang, J. H., Huang, L. H., Kuo, C. W., Tai, S. P., Hou, S. Y., Lin, W. L., Liao, E. B., Yang, K. F., Wu, T. J., Chiou, W. C., Tung, C. H., Jeng, S. P., Yu, C. H.

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High-performance inductors for integrated fan-out wafer level packaging (InFO-WLP) von Chen, S. M., Huang, L. H., Yeh, J. H., Lin, Y. J., Kuo, F. W., Chen, H. N., Chiu, M. Y., Liu, C. C., Yeh, John, Yeh, T. J., Hou, S. Y., Hung, J. P., Lin, J. C., Jou, C. P., Jeng, S. P., Yu, Doug

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High-aspect ratio through silicon via (TSV) technology von Chang, H. B., Chen, H. Y., Kuo, P. C., Chien, C. H., Liao, E. B., Lin, T. C., Wei, T. S., Lin, Y. C., Chen, Y. H., Yang, K. F., Teng, H. A., Tsai, W. C., Tseng, Y. C., Chen, S. Y., Hsieh, C. C., Chen, M. F., Liu, Y. H., Wu, T. J., Hou, S. Y., Chiou, W. C., Jeng, S. P., Yu, C. H.

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Lead-free flip chip solution for 40 nm extreme low-k interconnect system von Hou, S Y, Shih, C W, Wu, W C, Hsieh, C H, Su, A J, Tung, C H, Jeng, S P, Li, M J, Yu, Doug C H

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Surface passivation of Ni/Cr alloy at room temperature von Jeng, Shin-Puu, Holloway, Paul H., Batich, Chris D.

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Manufacturability optimization and design validation studies for FPGA-based, 3D integrated circuits von Ibbotson, D., Rahman, A., Xie, J., Chanda, K., Lee, M. J., Ratakonda, D., Li, Z., Hsu, K. C., Jeng, S. P., Hou, S. Y., Yu, Douglas C. H.

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Equilibrium surface segregation for Ni15%Cr(110) von Jeng, S.-P., Holloway, P.H., Batich, C.D.

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Direct observation of defect-induced surface covalency in ionic CoO (1 0 0) von Jeng, Shin-Puu, Henrich, Victor E.

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An integrated air gap structure to achieve high-performance TSV interconnects for 28nm 3D-IC integration von Liao, E. B., Cheng, K. W., Chen, Y. H., Teng, H. A., Tseng, Y. C., Tsai, W. C., Chen, J. H., Lin, T. C., Yang, K. F., Lin, Y. C., Chang, H. B., Wei, T. S., Chen, H. Y., Chen, M. F., Hsieh, C. C., Wu, T. J., Wu, C. H., Shih, D. Y., Chiou, W. C., Jeng, S. P., Yu, C. H.

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Changes induced at Ni/Cr alloy surfaces by annealing and oxygen exposure von Jeng, Shin-Puu, Holloway, Paul H., Asbury, Douglas A., Hoflund, Gar B.

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An ultra-thin interposer utilizing 3D TSV technology von Chiou, W. C., Yang, K. F., Yeh, J. L., Wang, S. H., Liou, Y. H., Wu, T. J., Lin, J. C., Huang, C. L., Lu, S. W., Hsieh, C. C., Teng, H. A., Chiu, C. C., Chang, H. B., Wei, T. S., Lin, Y. C., Chen, Y. H., Tu, H. J., Ko, H. D., Yu, T. H., Hung, J. P., Tsai, P. H., Yeh, D. C., Wu, W. C., Su, A. J., Chiu, S. L., Hou, S. Y., Shih, D. Y., Chen, K. H., Jeng, S. P., Yu, C. H.

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Preferential sputtering of Ni/Cr(110) von Jeng, Shin-Puu, Holloway, Paul H.

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Yield and reliability of 3DIC technology for advanced 28nm node and beyond von Yang, K. F., Wu, T. J., Chiou, W. C., Chen, M. F., Lin, Y. C., Tsai, F. W., Hsieh, C. C., Chang, C. H., Wu, W. J., Chen, Y. H., Chen, T. Y., Wang, H. R., Lin, I. C., Jan, S. B., Wang, R. D., Lu, Y. J., Shih, Y. C., Teng, H. A., Tsai, C. S., Chang, M. N., Chen, K., Hou, S. Y., Jeng, S. P., Yu, C. H.

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