Tunneling Transistors Based on Graphene and 2-D Crystals von Jena, Debdeep

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Charge Scattering and Mobility in Atomically Thin Semiconductors von Ma, Nan, Jena, Debdeep

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Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting von Poncé, Samuel, Jena, Debdeep, Giustino, Feliciano

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Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors von Kang, Jiahao, Liu, Wei, Sarkar, Deblina, Jena, Debdeep, Banerjee, Kaustav

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Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering von Jena, Debdeep, Konar, Aniruddha

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Role of Metal Contacts in Designing High-Performance Monolayer n‑Type WSe2 Field Effect Transistors von Liu, Wei, Kang, Jiahao, Sarkar, Deblina, Khatami, Yasin, Jena, Debdeep, Banerjee, Kaustav

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Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures von Simon, John, Protasenko, Vladimir, Lian, Chuanxin, Xing, Huili, Jena, Debdeep

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Anisotropic thermal conductivity in single crystal β-gallium oxide von Guo, Zhi, Verma, Amit, Wu, Xufei, Sun, Fangyuan, Hickman, Austin, Masui, Takekazu, Kuramata, Akito, Higashiwaki, Masataka, Jena, Debdeep, Luo, Tengfei

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Carrier statistics and quantum capacitance of graphene sheets and ribbons von Fang, Tian, Konar, Aniruddha, Xing, Huili, Jena, Debdeep

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Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals von Shi, Hongyan, Yan, Rusen, Bertolazzi, Simone, Brivio, Jacopo, Gao, Bo, Kis, Andras, Jena, Debdeep, Xing, Huili Grace, Huang, Libai

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Single-particle tunneling in doped graphene-insulator-graphene junctions von Feenstra, R. M., Jena, Debdeep, Gu, Gong

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A polarization-induced 2D hole gas in undoped gallium nitride quantum wells von Chaudhuri, Reet, Bader, Samuel James, Chen, Zhen, Muller, David A., Xing, Huili Grace, Jena, Debdeep

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Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor von Li, Mingda (Oscar), Esseni, David, Snider, Gregory, Jena, Debdeep, Grace Xing, Huili

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Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures von Bayerl, Dylan, Islam, SM, Jones, Christina M., Protasenko, Vladimir, Jena, Debdeep, Kioupakis, Emmanouil

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Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering von Fang, Tian, Konar, Aniruddha, Xing, Huili, Jena, Debdeep

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Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes von Li, Wenshen, Nomoto, Kazuki, Hu, Zongyang, Jena, Debdeep, Xing, Huili Grace

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Thermal conductivity of crystalline AlN and the influence of atomic-scale defects von Xu, Runjie Lily, Muñoz Rojo, Miguel, Islam, S. M., Sood, Aditya, Vareskic, Bozo, Katre, Ankita, Mingo, Natalio, Goodson, Kenneth E., Xing, Huili Grace, Jena, Debdeep, Pop, Eric

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High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs von Hickman, Austin, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Lee, Kevin, Xing, Huili Grace, Jena, Debdeep

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High-field transport in two-dimensional graphene von Fang, Tian, Konar, Aniruddha, Xing, Huili, Jena, Debdeep

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Interband tunneling in two-dimensional crystal semiconductors von Ma, Nan, Jena, Debdeep

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