FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry von Jelmakas, E., Kadys, A., Dmukauskas, M., Grinys, T., Tomašiūnas, R., Dobrovolskas, D., Gervinskas, G., Juodkazis, S., Talaikis, M., Niaura, G.

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A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser von Jelmakas, E, Kadys, A, Malinauskas, T, Paipulas, D, Dobrovolskas, D, Dmukauskas, M, Selskis, A, Juodkazis, S, Tomaši nas, R

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Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211―1285 nm von JELMAKAS, E, TOMASIUNAS, R, VENGRIS, M, RAFAILOV, E, KRESTNIKOV, I

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Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness von Gaubas, E., Čeponis, T., Jasiunas, A., Jelmakas, E., Juršėnas, S., Kadys, A., Malinauskas, T., Tekorius, A., Vitta, P.

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Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211–1285nm von Jelmakas, E., Tomašiūnas, R., Vengris, M., Rafailov, E., Krestnikov, I.

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Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness von Gaubas, E., Čeponis, T., Jasiunas, A., Jelmakas, E., Juršėnas, S., Kadys, A., Malinauskas, T., Tekorius, A., Vitta, P.

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Photoinduced absorption saturation dynamics of InGaAs quantum dot structure dedicated for wavelength 1070 nm von Jelmakas, E, Tomašiun̅as, Roland, Rafailov, E, Krestnikov, I

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InGaAs quantum dot 1050 nm saturable absorber mirror: Investigation under high excitation condition von Jelmakas, E., Tomasiunas, R., Wilcox, K., Rafailov, E., Krestnikov, I.

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Photoinduced transmittance at 1250 nm of InAs/InGaAs quantum dot based semiconductor optical amplifier measured via waveguiding configuration von Jelmakas, E., Tomasiunas, R., Vengris, M., Rafailov, E., Krestnikov, I.

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