New interface structure for A -type CoSi2/Si(111) von Chisholm, M. F., Pennycook, S. J., Jebasinski, R., Mantl, S.

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The effect of dose on the growth of buried CoSi2 layers in (111) and (100) Si produced by ion implantation von Mantl, S., Jebasinski, R., Hartmann, D.

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Fabrication of thin buried CoSi2 layers in Si(100) by ion beam synthesis von JEBASINSKI, R, MANTL, S, DIEKER, C

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Formation of buried CoSi2 layers with ion beam synthesis at low implantation energies von JEBASINSKI, R, MANTL, S, VESCAN, L, DIEKER, C

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Z -contrast investigation of the ordered atomic interface of CoSi2/Si(001) layers von Chisholm, M. F., Browning, N. D., Pennycook, S. J., Jebasinski, R., Mantl, S.

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Annealing of silicon implanted by a high dose of cobalt ions investigated by in situ x-ray diffraction von MÜLLER, M, BAHR, D, PRESS, W, JEBASINSKI, R, MANTL, S

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Ion scattering investigations of buried CoSi2 layers produced by ion beam synthesis von Jebasinski, R., Mantl, S., Dicker, Ch, Jäger, W.

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X-ray reflectivity and diffuse-scattering study of CoSi2 layers in Si produced by ion-beam synthesis von BAHR, D, PRESS, W, JEBASINSKI, R, MANTL, S

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Permeable-base transistors with ion-implanted CoSi2 gate von Schüppen, A., Mantl, S., Vescan, L., Woiwod, S., Jebasinski, R., Lüth, H.

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Diffuse x-ray scattering from thin films with defects von Bahr, D, Press, W, Jebasinski, R, Mantl, S

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Synthesis of thin buried CoSi2 layers by low energy cobalt implantation von Jebasinski, R., Mantl, S., Dieker, Ch

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Buried single-crystal CoSi2 layers in SiGe alloys made by ion beam synthesis von JEBASINSKI, R, MANTL, S, DIEKER, C, CRECELIUS, G, DEDERICHS, H, VESCAN, L

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Phosphorus redistribution during the formation of buried CoSi2 layers by ion beam synthesis von Schüppen, A., Jebasinski, R., Mantl, S., Marso, M., Lüth, H., Breuer, U., Holzbrecher, H.

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Effect of doping profiles on Si/CoSi2 permeable base transistors von SCHÜPPEN, A, VESCAN, L, JEBASINSKI, R, VAN DER HART, A, LÜTH, H

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Formation of CoSi2 in SIMOX wafers by high dose cobalt implantation von Sjoreen, T.P., Jebasinski, R., Schmidt, K., Mantl, S., Holzbrecher, H., Speier, W.

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Fabrication of thin buried CoSi 2 layers in Si(100) by ion beam synthesis von Jebasinski, R, Mantl, S, Dieker, Chr

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[ital Z]-contrast investigation of the ordered atomic interface of CoSi[sub 2]/Si(001) layers von Chisholm, M.F., Browning, N.D., Pennycook, S.J., Jebasinski, R., Mantl, S.

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New interface structure for A-type CoSi sub 2 /Si(111) von Chisholm, M F, Pennycook, S J, Jebasinski, R, Mantl, S

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New interface structure for [ital A]-type CoSi[sub 2]/Si(111) von Chisholm, M.F., Pennycook, S.J., Jebasinski, R., Mantl, S.

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Electronic-structure determination of ion-beam-synthesized CoSi2 using photon-in-photon-out spectroscopies von EISEBITT, S, BÖSKE, T, NORDGREN, J, HOLLDACK, K, RUBENSSON, J.-E, KOJNOK, J, EBERHARDT, W, JEBASINSKI, R, MANTL, S, SKYTT, P, GUO, J.-H, WASSDAHL, N

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