Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene von Bayle, Maxime, Reckinger, Nicolas, Huntzinger, Jean-Roch, Felten, Alexandre, Bakaraki, Ahmad, Landois, Périne, Colomer, Jean-François, Henrard, Luc, Zahab, Ahmed-Azmi, Sauvajol, Jean-Louis, Paillet, Matthieu

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Restoring self-limited growth of single-layer graphene on copper foil via backside coating von Reckinger, Nicolas, Casa, Marcello, Scheerder, Jeroen E, Keijers, Wout, Paillet, Matthieu, Huntzinger, Jean-Roch, Haye, Emile, Felten, Alexandre, Van de Vondel, Joris, Sarno, Maria, Henrard, Luc, Colomer, Jean-François

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Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size von Wasem Klein, Felipe, Huntzinger, Jean-Roch, Astié, Vincent, Voiry, Damien, Parret, Romain, Makhlouf, Houssine, Juillaguet, Sandrine, Decams, Jean-Manuel, Contreras, Sylvie, Landois, Périne, Zahab, Ahmed-Azmi, Sauvajol, Jean-Louis, Paillet, Matthieu

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In Situ Raman Probing of Graphene over a Broad Doping Range upon Rubidium Vapor Exposure von Parret, Romain, Paillet, Matthieu, Huntzinger, Jean-Roch, Nakabayashi, Denise, Michel, Thierry, Tiberj, Antoine, Sauvajol, Jean-Louis, Zahab, Ahmed A

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Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling von Wang, Tianlin, Huntzinger, Jean-Roch, Bayle, Maxime, Roblin, Christophe, Decams, Jean-Manuel, Zahab, Ahmed-Azmi, Contreras, Sylvie, Paillet, Matthieu, Landois, Périne

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Direct liquid injection pulsed-pressure MOCVD of large area MoS2 on Si/SiO2 von Astié, Vincent, Felipe Wasem Klein, Makhlouf, Houssin, Paillet, Matthieu, Jean-Roch Huntzinger, Jean-Louis Sauvajol, Ahmed-Azmi Zahab, Juillaguet, Sandrine, Contreras, Sylvie, Voiry, Damien, Landois, Périne, Jean-Manuel Decams

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Multiscale investigation of graphene layers on 6H-SiC(000-1) von Tiberj, Antoine, Huntzinger, Jean-Roch, Camassel, Jean, Hiebel, Fanny, Mahmood, Ather, Mallet, Pierre, Naud, Cecile, Veuillen, Jean-Yves

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Electrical monitoring of organic crystal phase transition using MoS2 field effect transistor von Boulet, Ilan, Pascal, Simon, Bedu, Frederic, Ozerov, Igor, Ranguis, Alain, Leoni, Thomas, Becker, Conrad, Masson, Laurence, Matkovic, Aleksandar, Teichert, Christian, Siri, Olivier, Attaccalite, Claudio, Huntzinger, Jean-Roch, Paillet, Matthieu, Zahab, Ahmed, Parret, Romain

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Confined longitudinal acoustic phonon modes in free-standing Si membranes coherently excited by femtosecond laser pulses von Hudert, Florian, Bruchhausen, Axel, Issenmann, Daniel, Schecker, Olivier, Waitz, Reimar, Erbe, Artur, Scheer, Elke, Dekorsy, Thomas, Mlayah, Adnen, Huntzinger, Jean-Roch

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Raman-Brillouin light scattering in low-dimensional systems: Photoelastic model versus quantum model von Mlayah, Adnen, Huntzinger, Jean-Roch, Large, Nicolas

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Electron–acoustic-phonon interaction and resonant Raman scattering in Ge quantum dots: Matrix and quantum confinement effects von Huntzinger, Jean-Roch, Mlayah, Adnen, Paillard, Vincent, Wellner, Anja, Combe, Nicolas, Bonafos, Caroline

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X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD von Vézian, Stephane, Portail, Marc, Mauguin, Olivia, Tiberj, Antoine, Müller, Pierre, Leroy, Frédéric, Largeau, Ludovic, Michon, Adrien, Huntzinger, Jean Roch, Zielinski, Marcin, Cheynis, Fabien, Lefebvre, Denis, Chassagne, Thierry

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Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC von Camara, Nicolas, Huntzinger, Jean-Roch, Rius, Gemma, Tiberj, Antoine, Mestres, Narcis, Perez-Murano, Francesc, Godignon, Philippe, Camassel, Jean

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Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping von Syväjärvi, Mikael, Raineri, Vito, Huntzinger, Jean Roch, Sonde, Sushant, Yakimova, Rositza, Tiberj, Antoine, Camassel, Jean, Giannazzo, Filippo

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Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2 von Astié, Vincent, Wasem Klein, Felipe, Makhlouf, Houssin, Paillet, Matthieu, Huntzinger, Jean-Roch, Sauvajol, Jean-Louis, Zahab, Ahmed-Azmi, Juillaguet, Sandrine, Contreras, Sylvie, Voiry, Damien, Landois, Périne, Decams, Jean-Manuel

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Direct liquid injection pulsed-pressure MOCVD of large area MoS on Si/SiO von Astié, Vincent, Wasem Klein, Felipe, Makhlouf, Houssin, Paillet, Matthieu, Huntzinger, Jean-Roch, Sauvajol, Jean-Louis, Zahab, Ahmed-Azmi, Juillaguet, Sandrine, Contreras, Sylvie, Voiry, Damien, Landois, Périne, Decams, Jean-Manuel

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Reversible optical doping of graphene von Tiberj, A., Rubio-Roy, M., Paillet, M., Huntzinger, J. -R., Landois, P., Mikolasek, M., Contreras, S., Sauvajol, J. -L., Dujardin, E., Zahab, A. -A.

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Subharmonic resonant optical excitation of confined acoustic modes in a free-standing semiconductor membrane at GHz frequencies with a high-repetition-rate femtosecond laser von Bruchhausen, A, Gebs, R, Hudert, F, Issenmann, D, Klatt, G, Bartels, A, Schecker, O, Waitz, R, Erbe, A, Scheer, E, Huntzinger, J-R, Mlayah, A, Dekorsy, T

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Raman-Brillouin electronic density in short-period superlattices von Large, Nicolas, Huntzinger, Jean-Roch, Aizpurua, Javier, Jusserand, Bernard, Mlayah, Adnen

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Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size von Wasem Klein, Felipe, Huntzinger, Jean-Roch, Astié, Vincent, Voiry, Damien, Parret, Romain, Makhlouf, Houssine, Juillaguet, Sandrine, Decams, Jean-Manuel, Contreras, Sylvie, Landois, Périne, Zahab, Ahmed-Azmi, Sauvajol, Jean-Louis, Paillet, Matthieu

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