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  1. 1
    Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

    Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition von Dhasiyan, Arun Kumar, Amalraj, Frank Wilson, Jayaprasad, Swathy, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Hori, Masaru

    Veröffentlicht in Scientific reports

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  2. 2
    Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

    Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition von Dhasiyan, Arun Kumar, Amalraj, Frank Wilson, Jayaprasad, Swathy, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Hori, Masaru

    Veröffentlicht in Scientific reports

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  3. 3
    Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (radical-enhanced metalorganic chemical vapor deposition)

    Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (radica... von Dhasiyan, Arun Kumar, Jayaprasad, Swathy, Amalraj, Frank Wilson, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Hori, Masaru


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