Charge carrier lifetime modification in silicon by high energy H + or He + ion implantation von Khánh, N.Q., Tüttő, P., Buiu, O., Jároli, E.N., Bíró, L.P., Manuaba, A., Gyulai, J.

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Charge carrier lifetime modification in silicon by high energy H(+), He(+) ion implantation von Khanh, N Q, Jaroli, E N, Biro, L P, Mohacsy, T, Gyulai, J, Tutto, P, Kovacsics, C, Buiu, O, Paszti, F, Manuaba, A

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Ion beam channeling study of cobalt implanted sapphire von Jároli, E., Szilágyi, E., Khánh, N.Q., Pécz, B.

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Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry using different optical models von FRIED, M, LOHNER, T, JAROLI, E, KHANH, N. Q, HAJDU, C, GYULAI, J

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Ellipsometric and ion backscattering measurements of the properties of silicon-on-insulator structure formed by thermally activated redistribution of high-dose ion implanted nitrog... von Khanh, N. Q., Fried, M., Battistig, G., Laczik, Z., Lohner, T., Jaroli, E., Schiller, V., Guylai, J.

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Intermetallic compound formation of Ge-Ni and Ge-Al-Ni systems by furnace annealing and ion beam intermixing von Jároli, E., Khanh, N.Q., Mezey, G., Zsoldos, É., Kovács, B., Mojzes, I., Lohner, T., Kótai, E., Manuaba, A., Fried, M., Gyulai, J.

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