Remote epitaxy through graphene enables two-dimensional material-based layer transfer von Kim, Yunjo, Cruz, Samuel S., Lee, Kyusang, Alawode, Babatunde O., Choi, Chanyeol, Song, Yi, Johnson, Jared M., Heidelberger, Christopher, Kong, Wei, Choi, Shinhyun, Qiao, Kuan, Almansouri, Ibraheem, Fitzgerald, Eugene A., Kong, Jing, Kolpak, Alexie M., Hwang, Jinwoo, Kim, Jeehwan

Volltext

Atomic scale mechanism of β to γ phase transformation in gallium oxide von Huang, Hsien-Lien, Johnson, Jared M., Chae, Christopher, Senckowski, Alexander, Wong, Man Hoi, Hwang, Jinwoo

Volltext

High current density 2D/3D MoS2/GaN Esaki tunnel diodes von Krishnamoorthy, Sriram, Lee, Edwin W., Lee, Choong Hee, Zhang, Yuewei, McCulloch, William D., Johnson, Jared M., Hwang, Jinwoo, Wu, Yiying, Rajan, Siddharth

Volltext

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

Volltext

Interband tunneling for hole injection in III-nitride ultraviolet emitters von Zhang, Yuewei, Krishnamoorthy, Sriram, Johnson, Jared M., Akyol, Fatih, Allerman, Andrew, Moseley, Michael W., Armstrong, Andrew, Hwang, Jinwoo, Rajan, Siddharth

Volltext

Direct determination of structural heterogeneity in metallic glasses using four-dimensional scanning transmission electron microscopy von Im, Soohyun, Chen, Zhen, Johnson, Jared M., Zhao, Pengyang, Yoo, Geun Hee, Park, Eun Soo, Wang, Yunzhi, Muller, David A., Hwang, Jinwoo

Volltext

Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy von Johnson, Jared M., Im, Soohyun, Windl, Wolfgang, Hwang, Jinwoo

Volltext

Low-Pressure Chemical Vapor Deposition of In2O3 Films on Off-Axis c‑Sapphire Substrates von Karim, Md Rezaul, Feng, Zixuan, Johnson, Jared M, Zhu, Menglin, Hwang, Jinwoo, Zhao, Hongping

Volltext

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3 von Johnson, Jared M, Chen, Zhen, Varley, Joel B, Jackson, Christine M, Esmat Farzana, Zhang, Zeng, Arehart, Aaron R, Hsien-Lien Huang, Genc, Arda, Ringel, Steven A, Chris G. Van de Walle, Muller, David A, Hwang, Jinwoo

Volltext

Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films von Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Sarker, Jith, Zhu, Menglin, Karim, Md Rezaul, Mazumder, Baishakhi, Hwang, Jinwoo, Zhao, Hongping

Volltext

Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates von Lee, Choong Hee, Krishnamoorthy, Sriram, O'Hara, Dante J., Brenner, Mark R., Johnson, Jared M., Jamison, John S., Myers, Roberto C., Kawakami, Roland K., Hwang, Jinwoo, Rajan, Siddharth

Volltext

Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3 von Huang, Hsien-Lien, Chae, Christopher, Johnson, Jared M., Senckowski, Alexander, Sharma, Shivam, Singisetti, Uttam, Wong, Man Hoi, Hwang, Jinwoo

Volltext

Molecular beam epitaxy of GaN on 2H–MoS2 von Lee, Choong Hee, Zhang, Yuewei, Johnson, Jared M., Koltun, Rachel, Gambin, Vincent, Jamison, John S., Myers, Roberto C., Hwang, Jinwoo, Rajan, Siddharth

Volltext

Band offsets of (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces grown via MOCVD von Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

Volltext

MOCVD growth of β-phase (AlxGa1−x)2O3 on ( 2 ¯01) β-Ga2O3 substrates von Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

Volltext

Nonlinear Electron-Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide von Wang, Yiping, Seewald, Lucas, Sun, Yi-Yang, Keblinski, Pawel, Sun, Xin, Zhang, Shengbai, Lu, Toh-Ming, Johnson, Jared M., Hwang, Jinwoo, Shi, Jian

Volltext

Probing Nanoscale Structural Heterogeneity in Metallic Glasses Using 4-D STEM von Im, Soohyun, Chen, Zhen, Johnson, Jared M., Zhao, Pengyang, Yoo, Geun Hee, Park, Eun Soo, Wang, Yunzhi, Muller, David A., Hwang, Jinwoo

Volltext

Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films’” [APL Mater. 8, 089101 (2020)] von Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Sarker, Jith, Zhu, Menglin, Karim, Md Rezaul, Mazumder, Baishakhi, Hwang, Jinwoo, Zhao, Hongping

Volltext

Identifying Atomic Reconstruction at Complex Oxide Interfaces Using Quantitative STEM von Johnson, Jared M., Thompson, Justin, Seo, S. S. A., Hwang, Jinwoo

Volltext

MOCVD Epitaxy of Ultrawide Bandgap beta-(AlxGa1-x)(2)O-3 with High-Al Composition on (100) beta-Ga2O3 Substrates von Bhuiyan, A. F. M. Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

Volltext