Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures von Aleksiejūnas, R., Gelžinytė, K., Nargelas, S., Jarašiūnas, K., Vengris, M., Armour, E. A., Byrnes, D. P., Arif, R. A., Lee, S. M., Papasouliotis, G. D.

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Fast and slow carrier recombination transients in highly excited 4H- and 3C-SiC crystals at room temperature von Ščajev, P., Gudelis, V., Jarašiūnas, K., Klein, P. B.

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Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics von Nargelas, S., Mickevičius, J., Kadys, A., Jarašiūnas, K., Malinauskas, T.

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Photo-electrical and transport properties of hydrothermal ZnO von Onufrijevs, P., Ščajev, P., Jarašiūnas, K., Medvid, A., Korsaks, V., Mironova-Ulmane, N., Zubkins, M., Mimura, H.

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Features of free carrier and exciton recombination, diffusion, and photoluminescence in undoped and phosphorus-doped diamond layers von Ščajev, P., Jurkevičius, J., Mickevičius, J., Jarašiūnas, K., Kato, H.

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Carrier dynamics in blue and green emitting InGaN MQWs von Aleksiejūnas, R., Nomeika, K., Miasojedovas, S., Nargelas, S., Malinauskas, T., Jarašiūnas, K., Tuna, Ö., Heuken, M.

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Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique von Nargelas, S., Jarašiūnas, K., Bertulis, K., Pačebutas, V.

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Carrier dynamics and photoelectrical parameters in highly compensated sublimation grown 3C-SiC layers studied by time-resolved nonlinear optical techniques von Liaugaudas, G, Š ajev, P, Jaraši nas, K

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Development of a microwave photoconductance measurement technique for the study of carrier dynamics in highly-excited 4H-SiC von Suba ius, L, Jaraši nas, K, Š ajev, P, Kato, M

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Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer von Jarašiūnas, K., Nargelas, S., Aleksiejūnas, R., Miasojedovas, S., Vengris, M., Okur, S., Morkoç, H., Özgür, Ü., Giesen, C., Tuna, Ö., Heuken, M.

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Application of a time-resolved four-wave mixing technique for the determination of thermal properties of 4H–SiC crystals von SCAJEV, P, JARASIUNAS, K

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Carrier recombination and diffusivity in microcrystalline CVD-grown and single-crystalline HPHT diamonds von Ščajev, P., Gudelis, V., Jarašiūnas, K., Kisialiou, I., Ivakin, E., Nesládek, M., Haenen, K.

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Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers von Ščajev, P., Nargelas, S., Jarašiūnas, K., Kisialiou, I., Ivakin, E., Deferme, W., D'Haen, J., Haenen, K.

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Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques von Malinauskas, T., Jarašiūnas, K., Miasojedovas, S., Juršėnas, S., Beaumont, B., Gibart, P.

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Optical discrimination of deep trap contribution to carrier recombination in semi-insulating crystals von Kadys, A., Jarašiūnas, K., Verstraeten, D.

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All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN von Malinauskas, T., Aleksiejūnas, R., Jarašiūnas, K., Beaumont, B., Gibart, P., Kakanakova-Georgieva, A., Janzen, E., Gogova, D., Monemar, B., Heuken, M.

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Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light-induced transient grating technique von Malinauskas, T., Jarašiūnas, K., Ivakin, E., Tranchant, N., Nesladek, M.

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Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K von Miasojedovas, S., Ščajev, P., Jarašiūnas, K., Gil, B., Miyake, H.

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Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures von Nomeika, K., Aleksiejūnas, R., Miasojedovas, S., Tomašiūnas, R., Jarašiūnas, K., Pietzonka, I., Strassburg, M., Lugauer, H.-J.

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Anisotropy of free-carrier absorption and diffusivity in m-plane GaN von Ščajev, P., Jarašiūnas, K., Özgür, Ü., Morkoç, H., Leach, J., Paskova, T.

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