Localized interaction of single porphyrin molecules with oxygen vacancies on TiO2(110) von Lackinger, Markus, Janson, Martin S, Ho, W

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Clinicopathological analysis of colorectal cancer: a comparison between emergency and elective surgical cases von Ghazi, Sam, Berg, Elisabeth, Lindblom, Annika, Lindforss, Ulrik

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Ion implantation in 4H–SiC von Wong-Leung, J., Janson, M.S., Kuznetsov, A., Svensson, B.G., Linnarsson, M.K., Hallén, A., Jagadish, C., Cockayne, D.J.H.

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Formation of precipitates in heavily boron doped 4H-SiC von Linnarsson, M.K., Janson, M.S., Nordell, N., Wong-Leung, J., Schöner, A.

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Vacancy-related defect distributions in B-11-, N-14-, and Al-27-implanted 4H-SiC: Role of channeling von Janson, Martin S., Slotte, J., Kuznetsov, Andrej Y., Saarinen, K., Hallén, Anders

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Self-diffusion of C-12 and C-13 in intrinsic 4H-SiC von Linnarsson, Margareta K., Janson, Martin S., Zhang, J., Janzen, E., Svensson, B. G.

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Electronic stopping cross sections in silicon carbide for low-velocity ions with 1 <= Z(1)<= 15 von Janson, Martin S., Linnarsson, Margareta K., Hallén, Anders, Svensson, Bengt G.

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In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates von Janzén, Erik, Forsberg, Urban, Linnarsson, Margareta K., Janson, Martin S.

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Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC von Janzén, Erik, Henry, Anne, Janson, Martin S.

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Ion Implantation Processing and Related Effects in SiC von K.-Nielsen, H., Kuznetsov, Andrej Yu, Alfieri, Giovanni, Svensson, Bengt Gunnar, Hallén, Anders, Jagadish, C., Wong-Leung, J., Janson, Martin S., Linnarsson, Margareta K., Grossner, Ulrike, Monakhov, Edouard V., Grillenberger, Joachim

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Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC von Konstantinov, Andrey O., Schöner, Adolf, Linnarsson, Margareta K., Janson, Martin S., Svensson, Bengt Gunnar

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Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide von Janson, M S, Linnarsson, M K, Hallén, A, Svensson, B G, Achtziger, N, Unéus, L, Lloyd Spetz, A, Forsberg, U

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Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy von Slotte, J., Kuznetsov, Andrej Yu, Saarinen, Kimmo, Janson, Martin S., Hallén, Anders

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Doping of Silicon Carbide by Ion Implantation von Carlsson, F.H.C., Österman, John, Hallén, Anders, Jagadish, C., Persson, P.O.Å., Bergman, Peder, Linnarsson, Margareta K., Kuznetsov, Andrej Yu, Formanek, Boleslaw, Svensson, Bengt Gunnar, Hultman, L., Morvan, Erwan, Janson, Martin S., Storasta, L.

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Range Distributions of Implanted Ions in Silicon Carbide von Janson, Martin S., Linnarsson, Margareta K., Hallén, Anders, Svensson, Bengt Gunnar

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Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth von Janzén, Erik, Forsberg, Urban, Linnarsson, Margareta K., Janson, Martin S., Svensson, Bengt Gunnar

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Channeled Implants in 6H Silicon Carbide von Kuznetsov, Andrej Yu, Hallén, Anders, Godignon, Philippe, Svensson, Bengt Gunnar, Morvan, Erwan, Janson, Martin S., Linnarsson, Margareta K.

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Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC von Nordell, Nils, Janson, Martin S., Linnarsson, Margareta K., Hallén, Anders, Karlsson, S., Svensson, Bengt Gunnar

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The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures von Syväjärvi, Mikael, Henry, Anne, Janzén, Erik, Lloyd Spetz, Anita, Svensson, Bengt Gunnar, Yakimova, Rositza, Ekedahl, Lars-G., Lundström, Ingemar, Unéus, Lars, Linnarsson, Margareta K., Janson, Martin S., Nakagomi, Shinji

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Precipitate Formation in Heavily Al-Doped 4H-SiC Layers von Karlsson, S., Yakimova, Rositza, Hultman, L., Svensson, Bengt Gunnar, Persson, P.O.Å., Andersson, H., Linnarsson, Margareta K., Janson, Martin S., Zimmermann, Uwe, Bleichner, H.

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