Ion implantation of silicon carbide von Hallén, A, Janson, M.S, Kuznetsov, A.Yu, Åberg, D, Linnarsson, M.K, Svensson, B.G, Persson, P.O, Carlsson, F.H.C, Storasta, L, Bergman, J.P, Sridhara, S.G, Zhang, Y

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Ion implantation in 4H–SiC von Wong-Leung, J., Janson, M.S., Kuznetsov, A., Svensson, B.G., Linnarsson, M.K., Hallén, A., Jagadish, C., Cockayne, D.J.H.

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Formation of precipitates in heavily boron doped 4H-SiC von Linnarsson, M.K., Janson, M.S., Nordell, N., Wong-Leung, J., Schöner, A.

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Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC von Slotte, J., Saarinen, K., Janson, M. S., Hallén, A., Kuznetsov, A. Yu, Svensson, B. G., Wong-Leung, J., Jagadish, C.

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Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide von Persson, P. O. Å., Hultman, L., Janson, M. S., Hallén, A.

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RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon–carbide synthesis study von Intarasiri, S., Kamwanna, T., Hallén, A., Yu, L.D., Janson, M.S., Thongleum, C., Possnert, G., Singkarat, S.

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On the nature of ion implantation induced dislocation loops in 4H-silicon carbide von Persson, P. O. Å., Hultman, L., Janson, M. S., Hallén, A., Yakimova, R., Panknin, D., Skorupa, W.

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The 3838 Å photoluminescence line in 4H-SiC von Henry, A., Forsberg, U., Janson, M. S., Janzén, E.

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Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material von Linnarsson, M. K., Janson, M. S., Zimmermann, U., Svensson, B. G., Persson, P. O. Å., Hultman, L., Wong-Leung, J., Karlsson, S., Schöner, A., Bleichner, H., Olsson, E.

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Self-diffusion of 12 C and 13 C in intrinsic 4H-SiC von Linnarsson, M.K., Janson, M.S., Zhang, J., Janzén, Erik, Svensson, B.G.

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Formation of pn junctions in deep silicon pores for X-ray imaging detector applications von Badel, X, Linnros, J, Janson, M.S, Österman, J

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Dislocation loop evolution in ion implanted 4H–SiC von Persson, P. O. Å., Hultman, L., Janson, M. S., Hallén, A., Yakimova, R.

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Solubility limits of dopants in 4H–SiC von Linnarsson, M.K., Zimmermann, U., Wong-Leung, J., Schöner, A., Janson, M.S., Jagadish, C., Svensson, B.G.

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Boron-related luminescence in SiC von Henry, A., Janson, M.S., Janzén, E.

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Scanning spreading resistance microscopy of aluminum implanted 4H–SiC von Osterman, J., Abtin, L., Zimmermann, U., Janson, M.S., Anand, S., Hallin, C., Hallén, A.

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Diffusion of light elements in 4H– and 6H–SiC von Linnarsson, M.K., Janson, M.S., Karlsson, S., Schöner, A., Nordell, N., Svensson, B.G.

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Hydrogen–boron complex formation and dissociation in 4H–silicon carbide von Janson, M.S., Hallén, A., Linnarsson, M.K., Svensson, B.G.

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Implanted p+n-Junctions in Silicon Carbide von Hallen, A., Janson, M.S., Osterman, J., Zimmermann, U., Linnarsson, M., Kuznetsov, A., Svensson, B.G., Zhang, Y., Persson, P.O.A.

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Smile attractiveness in cases treated with self‐ligating and conventional appliances with and without rapid maxillary expansion von Negreiros, Patricia O., Freitas, Karina M. S., Pinzan‐Vercelino, Célia R. M., Janson, Guilherme, Freitas, Marcos R.

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Infanticide in black capuchin monkeys (Cebus apella nigritus) in Iguazú National Park, Argentina von Ramírez-Llorens, P., Di Bitetti, M.S., Baldovino, M.C., Janson, C.H.

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