Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC von Slotte, J., Saarinen, K., Janson, M. S., Hallén, A., Kuznetsov, A. Yu, Svensson, B. G., Wong-Leung, J., Jagadish, C.

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Ion implantation range distributions in silicon carbide von Janson, M. S., Linnarsson, M. K., Hallén, A., Svensson, B. G.

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On the nature of ion implantation induced dislocation loops in 4H-silicon carbide von Persson, P. O. Å., Hultman, L., Janson, M. S., Hallén, A., Yakimova, R., Panknin, D., Skorupa, W.

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Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material von Linnarsson, M. K., Janson, M. S., Zimmermann, U., Svensson, B. G., Persson, P. O. Å., Hultman, L., Wong-Leung, J., Karlsson, S., Schöner, A., Bleichner, H., Olsson, E.

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Transient enhanced diffusion of implanted boron in 4H-silicon carbide von Janson, M. S., Linnarsson, M. K., Hallén, A., Svensson, B. G., Nordell, N., Bleichner, H.

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Ion implantation of silicon carbide von Hallén, A, Janson, M.S, Kuznetsov, A.Yu, Åberg, D, Linnarsson, M.K, Svensson, B.G, Persson, P.O, Carlsson, F.H.C, Storasta, L, Bergman, J.P, Sridhara, S.G, Zhang, Y

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Diffusion of light elements in 4H– and 6H–SiC von Linnarsson, M.K., Janson, M.S., Karlsson, S., Schöner, A., Nordell, N., Svensson, B.G.

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Boron-related luminescence in SiC von Henry, A., Janson, M.S., Janzén, E.

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Formation of precipitates in heavily boron doped 4H-SiC von Linnarsson, M.K., Janson, M.S., Nordell, N., Wong-Leung, J., Schöner, A.

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Scanning spreading resistance microscopy of aluminum implanted 4H–SiC von Osterman, J., Abtin, L., Zimmermann, U., Janson, M.S., Anand, S., Hallin, C., Hallén, A.

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Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC von Schöner, Adolf, Konstantinov, Andrey O., Linnarsson, Margareta K., Janson, Martin S., Svensson, Bengt Gunnar

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Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals von Wong-Leung, J., Janson, M. S., Svensson, B. G.

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Hydrogen–boron complex formation and dissociation in 4H–silicon carbide von Janson, M.S., Hallén, A., Linnarsson, M.K., Svensson, B.G.

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Ion implantation in 4H–SiC von Wong-Leung, J., Janson, M.S., Kuznetsov, A., Svensson, B.G., Linnarsson, M.K., Hallén, A., Jagadish, C., Cockayne, D.J.H.

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Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC von Linnarsson, Margareta K., Karlsson, S., Janson, Martin S., Hallén, Anders, Svensson, Bengt Gunnar, Nordell, Nils

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A germline variant in the TP53 polyadenylation signal confers cancer susceptibility von Stacey, Simon N, Sulem, Patrick, Masson, Gisli, Gudmundsson, Julius, Gudbjartsson, Daniel F, Magnusson, Olafur T, Gudjonsson, Sigurjon A, Sigurgeirsson, Bardur, Thorisdottir, Kristin, Ragnarsson, Rafn, Benediktsdottir, Kristrun R, Nexø, Bjørn A, Tjønneland, Anne, Overvad, Kim, Rudnai, Peter, Gurzau, Eugene, Koppova, Kvetoslava, Hemminki, Kari, Corredera, Cristina, Fuentelsaz, Victoria, Grasa, Pilar, Navarrete, Sebastian, Fuertes, Fernando, García-Prats, Maria D, Sanambrosio, Enrique, De Juan, Ana, Garcia, Almudena, Rivera, Fernando, Planelles, Dolores, Soriano, Virtudes, Requena, Celia, Aben, Katja K, van Rossum, Michelle M, Cremers, Ruben G H M, van Oort, Inge M, van Spronsen, Dick-Johan, Schalken, Jack A, Peters, Wilbert H M, Helfand, Brian T, Donovan, Jenny L, Hamdy, Freddie C, Badescu, Daniel, Codreanu, Ovidiu, Jinga, Mariana, Csiki, Irma E, Constantinescu, Vali, Badea, Paula, Mates, Ioan N, Dinu, Daniela E, Constantin, Adrian, Mates, Dana, Kristjansdottir, Sjofn, Agnarsson, Bjarni A, Jonsson, Eirikur, Barkardottir, Rosa B, Einarsson, Gudmundur V, Sigurdsson, Fridbjorn, Moller, Pall H, Stefansson, Tryggvi, Valdimarsson, Trausti, Johannsson, Oskar T, Sigurdsson, Helgi, Jonsson, Thorvaldur, Jonasson, Jon G, Tryggvadottir, Laufey, Rice, Terri, Hansen, Helen M, Xiao, Yuanyuan, Lachance, Daniel H, O′Neill, Brian Patrick, Kosel, Matthew L, Decker, Paul A, Thorleifsson, Gudmar, Johannsdottir, Hrefna, Helgadottir, Hafdis T, Sigurdsson, Asgeir, Lindblom, Annika, Sandler, Robert S, Keku, Temitope O, Banasik, Karina, Jørgensen, Torben, Witte, Daniel R, Hansen, Torben, Pedersen, Oluf, Jinga, Viorel, Neal, David E, Catalona, William J, Wrensch, Margaret, Wiencke, John, Jenkins, Robert B, Nagore, Eduardo, Vogel, Ulla, Kiemeney, Lambertus A, Kumar, Rajiv, Mayordomo, José I, Olafsson, Jon H, Kong, Augustine, Thorsteinsdottir, Unnur, Rafnar, Thorunn, Stefansson, Kari

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Hydrogen passivation of silicon carbide by low-energy ion implantation von Achtziger, N., Grillenberger, J., Witthuhn, W., Linnarsson, M. K., Janson, M., Svensson, B. G.

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Formation of pn junctions in deep silicon pores for X-ray imaging detector applications von Badel, X, Linnros, J, Janson, M.S, Österman, J

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Dislocation loop evolution in ion implanted 4H–SiC von Persson, P. O. Å., Hultman, L., Janson, M. S., Hallén, A., Yakimova, R.

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Ten-year outcomes of a randomised trial of laparoscopic versus open surgery for colon cancer von Deijen, Charlotte L., Vasmel, Jeanine E., de Lange-de Klerk, Elly S. M., Cuesta, Miguel A., Coene, Peter-Paul L. O., Lange, Johan F., Meijerink, W. J. H. Jeroen, Jakimowicz, Jack J., Jeekel, Johannes, Kazemier, Geert, Janssen, Ignace M. C., Påhlman, Lars, Haglind, Eva, Bonjer, H. Jaap

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