Schottky barrier height of Au on the transparent semiconducting oxide β -Ga2O3 von Mohamed, M., Irmscher, K., Janowitz, C., Galazka, Z., Manzke, R., Fornari, R.

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Electronic structure and engineered thermoelectric properties of SnSe von Ghafari, A., Khan, W., Janowitz, C.

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Splitting of the Ti-3d bands of TiSe2 in the charge-density wave phase von Ghafari, A., Petaccia, L., Janowitz, C.

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Gap states in the electronic structure of SnO2 single crystals and amorphous SnOx thin films von Haeberle, J., Machulik, S., Janowitz, C., Manzke, R., Gaspar, D., Barquinha, P., Schmeißer, D.

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Transport and angular resolved photoemission measurements of the electronic properties of In2O3 bulk single crystals von Scherer, V., Janowitz, C., Krapf, A., Dwelk, H., Braun, D., Manzke, R.

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Theoretical and experimental investigation of the electronic properties of the wide band-gap transparent semiconductor MgGa2O4 von Thielert, B, Janowitz, C, Galazka, Z, Mulazzi, M

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The effect of lithium intercalation on the electronic structure of the ternary compound semiconductors ZrSe2−xSx von Ghafari, A, Janowitz, C, Manzke, R

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Electronic and thermoelectric properties of ZrSxSe2−x von Ghafari, A., Janowitz, C.

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Schottky contact by Ag on In2O3 (111) single crystals von Nazarzadehmoafi, M., Machulik, S., Neske, F., Scherer, V., Janowitz, C., Galazka, Z., Mulazzi, M., Manzke, R.

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Electronic band structure and thermoelectric properties of ternary SnSxSe2−x (x = 0,1,2) von Ghafari, A., Janowitz, C.

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The surface band structure of β-Ga2O3 von Mohamed, M, Unger, I, Janowitz, C, Manzke, R, Galazka, Z, Uecker, R, Fornari, R

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In-plane polarization dependence of (Bi,Pb)2Sr2CaCu2O8+δ single crystals studied by X-ray absorption spectroscopy von Ghafari, A., Ariffin, A.K., Janowitz, C., Dwelk, H., Krapf, A., Manzke, R.

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The role of out of plane orbitals in the electronic properties of undoped CaxSr1−xCuO2 von Ghafari, A., Janowitz, C.

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Temperature dependence of the hole density in high-TC superconductors Bi2−yPbySr2CaCu2O8+δ von Ghafari, A., Janowitz, C., Ariffin, A.K., Dwelk, H., Krapf, A., Manzke, R.

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The electronic structure of β-Ga2O3 von Mohamed, M., Janowitz, C., Unger, I., Manzke, R., Galazka, Z., Uecker, R., Fornari, R., Weber, J. R., Varley, J. B., Van de Walle, C. G.

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Opposite dispersion bands at the Fermi level in ZrSe2 von Ghafari, A., Moustafa, M., Di Santo, G., Petaccia, L., Janowitz, C.

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Evolution of the density of states at the Fermi level of Bi2-yPbySr2-xLaxCuO6+δ and Bi2Sr2-xLaxCuO6+δ cuprates with hole doping von SCHNEIDER, M, UNGER, R.-S, MITDANK, R, MüLLER, R, KRAPF, A, ROGASCHEWSKI, S, DWELK, H, JANOWITZ, C, MANZKE, R

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On the band structure of HgTe and HgSe — view from photoemission von Janowitz, C., Orlowski, N., Manzke, R., Golacki, Z.

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The effect of lithium intercalation on the electronic structure of the ternary compound semiconductors ZrSe 2− x S x von Ghafari, A, Janowitz, C, Manzke, R

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The effect of lithium intercalation on the electronic structure of the ternary compound semiconductors ZrSe sub(2-x)S sub(x) von Ghafari, A, Janowitz, C, Manzke, R

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