High Breakdown Voltage (−201) \beta -Ga2O3 Schottky Rectifiers von Jiancheng Yang, Shihyun Ahn, Ren, F., Pearton, S. J., Soohwan Jang, Kuramata, A.

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Platinum-functionalized black phosphorus hydrogen sensors von Lee, Geonyeop, Jung, Sunwoo, Jang, Soohwan, Kim, Jihyun

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High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 von Yang, Jiancheng, Ahn, Shihyun, Ren, F., Pearton, S. J., Jang, Soohwan, Kim, Jihyun, Kuramata, A.

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Hydrogen Sensing Performance of ZnO Schottky Diodes in Humid Ambient Conditions with PMMA Membrane Layer von Jang, Soohwan, Jung, Sunwoo, Baik, Kwang Hyeon

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Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer von Sunwoo Jung, Kwang Hyeon Baik, Fan Ren, Pearton, Stephen J., Soohwan Jang

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Carbon Dioxide Sensing Characteristics of AlGaN/GaN High Electron Mobility Transistor with ZnO Nanorods von Baik, Kwang Hyeon, Jang, Soohwan

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Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures von Yang, Jiancheng, Carey, Patrick, Ren, Fan, Wang, Yu-Lin, Good, Michael L., Jang, Soohwan, Mastro, Michael A., Pearton, S. J.

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Valence and conduction band offsets in AZO/Ga2O3 heterostructures von Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P., Pearton, S.J., Jang, Soohwan, Kuramata, Akito

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Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers von Yang, Gwangseok, Kim, Hong-Yeol, Jang, Soohwan, Kim, Jihyun

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Hydrogen sensing characteristics of semipolar (112¯2) GaN Schottky diodes von Hyeon Baik, Kwang, Kim, Hyonwoong, Lee, Sung-Nam, Lim, Eunju, Pearton, S. J., Ren, F., Jang, Soohwan

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Anisotropic microstructure of hydrothermally-grown non-polar a-plane ZnO on a-plane GaN film von Baik, Kwang Hyeon, Kim, Hyonwoong, Jang, Soohwan

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Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing von Sunwoo Jung, Kwang Hyeon Baik, Fan Ren, Pearton, Stephen J., Soohwan Jang

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Schottky contact on hydrothermally grown a-plane ZnO for hydrogen sensing and UV detection von Kim, Jimin, Baik, Kwang Hyeon, Jang, Soohwan

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Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au von Carey, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, Kravchenko, Ivan I.

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Anisotropic electrical conductivity of surface-roughened semipolar GaN films by photochemical etching von Jang, Soohwan, Lee, Sohyun, Baik, Kwang Hyeon

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Suspended black phosphorus nanosheet gas sensors von Lee, Geonyeop, Kim, Suhyun, Jung, Sunwoo, Jang, Soohwan, Kim, Jihyun

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Effects of stabilizers on the synthesis of Pt3Cox/C electrocatalysts for oxygen reduction von JOUNG WOON KIM, JI HYUN HEO, SEUNG JUN HWANG, SUNG JONG YOO, JONG HYUN JANG, JEONG SOOK HA, JANG, Soohwan, LIM, Tae-Hoon, SUK WOO NAM, KIM, Soo-Kil

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Highly sensitive nonpolar a-plane GaN based hydrogen diode sensor with textured active area using photo-chemical etching von Baik, Kwang Hyeon, Kim, Jimin, Jang, Soohwan

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Influence of High-Energy Proton Irradiation on β‑Ga2O3 Nanobelt Field-Effect Transistors von Yang, Gwangseok, Jang, Soohwan, Ren, Fan, Pearton, Stephen J, Kim, Jihyun

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Photochemical wet etching of (001) plane ß-phase Ga2O3, and its anisotropic etching behavior von Kim, Yukyung, Baek, Jueun, Baik, Kwang Hyeon, Jang, Soohwan

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