New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications von Packeer Mohamed, Mohamed Fauzi, Mohamed Omar, Mohamad Faiz, Akbar Jalaludin Khan, Muhammad Firdaus, Ghazali, Nor Azlin, Hairi, Mohd Hendra, Falina, Shaili, Samsol Baharin, Mohd Syamsul Nasyriq

Volltext

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review von Islam, Naeemul, Mohamed, Mohamed Fauzi Packeer, Khan, Muhammad Firdaus Akbar Jalaludin, Falina, Shaili, Kawarada, Hiroshi, Syamsul, Mohd

Volltext

On-line WSN SoC estimation using Gaussian Process Regression: An Adaptive Machine Learning Approach von Ali, Omer, Ishak, Mohamad Khairi, Ahmed, Ashraf Bani, Salleh, Mohd Fadzli Mohd, Ooi, Chia Ai, Khan, Muhammad Firdaus Akbar Jalaludin, Khan, Imran

Volltext

Temperature Dependence of Electrical Characteristics of ZnO Nanowire Field-Effect Transistors with AZO and Aluminium Source/Drain Contact von Packeer Mohamed, Mohamed Fauzi, Ghazali, Nor Azlin, Chong, Harold, Jalaludin Khan, Muhammad Firdaus Akbar

Volltext

Evolution of solution-based organic thin-film transistor for healthcare monitoring– from device to circuit integration: A review von Yusof, Nur Syahadah, Mohamed, Mohamed Fauzi Packeer, Ghazali, Nor Azlin, Khan, Muhammad Firdaus Akbar Jalaludin, Shaari, Safizan, Mohtar, Mohd Nazim

Volltext

New Submicron Low Gate Leakage In 0.52 Al 0.48 As-In 0.7 Ga 0.3 As pHEMT for Low-Noise Applications von Packeer Mohamed, Mohamed Fauzi, Mohamed Omar, Mohamad Faiz, Akbar Jalaludin Khan, Muhammad Firdaus, Ghazali, Nor Azlin, Hairi, Mohd Hendra, Falina, Shaili, Samsol Baharin, Mohd Syamsul Nasyriq

Volltext

MATERIAL CHARACTERISATION AND NONDESTRUCTIVE TESTING USING MICROWAVE TECHNIQUE von Akbar Jalaludin Khan, Muhammad Firdaus

Volltext bestellen

Microwave Nondestructive Evaluation of Thermal Barrier Coated Turbine Blades Using Correlation Analysis von Akbar Jalaludin Khan, Muhammad Firdaus, Wielgat, Marcin, Knowles, James F

Volltext bestellen

2D Physical Modelling of Double δ-Doped pHEMT with Tensile InAlAs Barrier and Compressive InGaAs Channel von Ikhwan, Nur Iwana Mohd, Mohamed, Mohamed Fauzi Packeer, Khan, Muhammad Firdaus Akbar Jalaludin, Ghazali, Nor Azlin, Manaf, Asrulnizam Abd, Baharin, Mohd Syamsul Nasyriq Samsol, Hairi, Mohd Hendra, Rahim, Alhan Farhanah Abd

Volltext