On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag) von Saadi, M., Gonon, P., Vallée, C., Mannequin, C., Grampeix, H., Jalaguier, E., Jomni, F., Bsiesy, A.

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Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms von Saadi, M., Gonon, P., Vallée, C., Jomni, F., Jalaguier, E., Bsiesy, A.

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Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories von Charpin-Nicolle, C., Bonvalot, M., Sommer, R., Persico, A., Cordeau, M.L., Belahcen, S., Eychenne, B., Blaise, Ph, Martinie, S., Bernasconi, S., Jalaguier, E., Nowak, E.

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InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser von Monat, C., Seassal, C., Letartre, X., Regreny, P., Rojo-Romeo, P., Viktorovitch, P., Le Vassor d’Yerville, M., Cassagne, D., Albert, J. P., Jalaguier, E., Pocas, S., Aspar, B.

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CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns von Gay, G, Baron, T, Agraffeil, C, Salhi, B, Chevolleau, T, Cunge, G, Grampeix, H, Tortai, J-H, Martin, F, Jalaguier, E, De Salvo, B

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Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High- k Control Dielectrics von Gay, G., Molas, G., Bocquet, M., Jalaguier, E., Gely, M., Masarotto, L., Colonna, J. P., Grampeix, H., Martin, F., Brianceau, P., Vidal, V., Kies, R., Baron, T., Ghibaudo, G., De Salvo, B.

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Passivated TiN nanocrystals/SiN trapping layer for enhanced erasing in nonvolatile memory von Gay, G., Belhachemi, D., Colonna, J. P., Minoret, S., Brianceau, P., Lafond, D., Baron, T., Molas, G., Jalaguier, E., Beaurain, A., Pelissier, B., Vidal, V., De Salvo, B.

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Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon von Mouette, J., Seassal, C., Letartre, X., Rojo-Romeo, P., Leclercq, J.-L., Regreny, P., Viktorovitch, P., Jalaguier, E., Perreau, P., Moriceau, H.

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The generic nature of the Smart-Cut® process for thin film transfer von ASPAR, B, MORICEAU, H, LETERTRE, F, RAYSSAC, O, BARGE, T, MALEVILLE, C, GHYSELEN, B, JALAGUIER, E, LAGAHE, C, SOUBIE, A, BIASSE, B, PAPON, A. M, CLAVERIE, A, GRISOLIA, J, BENASSAYAG, G

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III-V layer transfer onto silicon and applications von Di Cioccio, L., Jalaguier, E., Letertre, F.

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Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane von Monat, C., Seassal, C., Letartre, X., Regreny, P., Gendry, M., Romeo, P. Rojo, Viktorovitch, P., Le Vassor d’Yerville, M., Cassagne, D., Albert, J. P., Jalaguier, E., Pocas, S., Aspar, B.

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Double Si nanocrystal layers grown by RPCVD for non-volatile memory applications von Masarotto, L, Molas, G, Jalaguier, E, Gay, G, Colonna, J P, Hartmann, J M, Yckache, K

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Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO(2)crystallinity on resistive switching mechanisms von Saadi, M., Gonon, P., Vallee, C., Jomni, F., Jalaguier, E., Bsiesy, A.

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InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 mu m von Monat, C, Seassal, C, Letartre, X, Viktorovitch, P, Regreny, P, Gendry, M, Rojo-Romeo, P, Hollinger, G, Jalaguier, E, Pocas, S, Aspar, B

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Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media von Pro, T., Buckley, J., Huang, K., Calborean, A., Gely, M., Delapierre, G., Ghibaudo, G., Duclairoir, F., Marchon, J.-C., Jalaguier, E., Maldivi, P., De Salvo, B., Deleonibus, S.

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Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory von JACOB, S, DE SALVO, B, DUFOURCQ, J, JALAGUIER, E, PEDRON, T, BOULANGER, F, DELEONIBUS, S, PERNIOLA, L, FESTES, G, BODNAR, S, COPPARD, R, THIERY, J. F, PATE-CAZAL, T, BONGIORNO, C, LOMBARDO, S

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO 2 in contact with noble metal anodes (Au, Cu, Ag) von Saadi, M., Gonon, P., Vallée, Corentin, Mannequin, C., Grampeix, H., Jalaguier, E., Jomni, F., Bsiesy, A.

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Impact of roughness of TiN bottom electrode on the forming voltage of HfO$_2$ based resistive memories von Charpin-Nicolle, Christelle, Bonvalot, M., Sommer, R., Persico, A., Cordeau, M.L., Belahcen, S., Eychenne, B., Blaise, Ph, Martinie, S., Bernasconi, S., Jalaguier, E., Nowak, E.

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InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m von Seassal, C, Rojo-Romeo, P, Letartre, X, Viktorovitch, P, Hollinger, G, Jalaguier, E, Pocas, S, Aspar, B

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Modal analysis and engineering on InP-based two-dimensional photonic-crystal microlasers on a Si wafer von Monat, C., Seassal, C., Letartre, X., Regreny, P., Pedro Rojo-Romeo, Viktorovitch, P., d'Yerville, M.L.V., Cassagne, D., Albert, J.P., Jalaguier, E., Pocas, S., Aspar, B.

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