Fading of pMOS dosimeters over a long period of time von Ristić, Goran S., Andjelković, Marko S., Duane, Russell, Jakšić, Aleksandar B.

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Successive gamma-ray irradiation and corresponding post-irradiation annealing of pMOS dosimeters von Pejovic, Milic, Pejovic, Momcilo, Jaksic, Aleksandar, Stankovic, Koviljka, Markovic, Slavoljub

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Using RADFET for the real-time measurement of gamma radiation dose rate von Andjelkovi, Marko S, Risti, Goran S, Jakši, Aleksandar B

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Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm von Ristic, Goran S., Andjelkovic, Marko S., Duane, Russell, Palma, Alberto J., Jaksic, Aleksandar B.

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The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses von Ristić, Goran S., Andjelković, Marko, Jakšić, Aleksandar B.

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The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs von Risti, Goran S, Vasovi, Nikola D, Jakši, Aleksandar B

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Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress von RISTIC, Goran S, PEJOVIC, Momcilo M, JAKSIC, Aleksandar B

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Radiation-sensitive field effect transistor response to gamma-ray irradiation von Pejovic, Milic, Pejovic, Momcilo, Jaksic, Aleksandar

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Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature von Pejovic, Milic M., Pejovic, Momcilo M., Jaksic, Aleksandar B.

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The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si) von Ristić, Goran S., Vasović, Nikola D., Kovačević, Milojko, Jakšić, Aleksandar B.

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Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs von ALEKSICA, Sanja M, JAKSIC, Aleksandar B, PEJOVIC, Momcilo M

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Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing von RISTIC, Goran S, PEJOVIC, Momcilo M, JAKSIC, Aleksandar B

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Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs von RISTIC, Goran S, PEJOVIC, Momcilo M, JAKSIC, Aleksandar B

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Response of pMOS dosemeters on gamma-ray irradiation during its re-use von Pejovic, Milic M, Pejovic, Momcilo M, Jaksic, Aleksandar B

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Sensitivity and fading of irradiated RADFETs with different gate voltages von Ristic, Goran S., Ilic, Stefan D., Andjelkovic, Marko S., Duane, Russell, Palma, Alberto J., Lalena, Antonio M., Krstic, Milos D., Jaksic, Aleksandar B.

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Fowler–Nordheim high electric field stress of power VDMOSFETs von RISTIC, Goran S, PEJOVIE, Momcilo M, JAKSIC, Aleksandar B

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Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases von RISTIC, G. S, PEJOVIC, M. M, JAKSIC, A. B

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Radiation sensitive MOSFETs irradiated with various positive gate biases von Ristic, Goran S., Ilic, Stefan D., Duane, Russell, Andjelkovic, Marko S., Palma, Alberto J., Lallena, Antonio M., Krstic, Milos D., Stankovic, Srboljub J., Jaksic, Aleksandar B.

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Analysis of postirradiation annealing of n -channel power vertical double-diffused metal–oxide–semiconductor transistors von Ristić, Goran S., Pejović, Momčilo M., Jakšić, Aleksandar B.

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The sensitivity of 100<ce:hsp sp="0.25"/>nm RADFETs with zero gate bias up to dose of 230<ce:hsp sp="0.25"/>Gy(Si) von Ristic, Goran S, Vasovic, Nikola D, Kovacevic, Milojko, Jaksic, Aleksandar B

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