Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process von Hongmei Li, Jagannathan, B., Jing Wang, Tai-Chi Su, Sweeney, S., Pekarik, J.J., Yun Shi, Greenberg, D., Zhenrong Jin, Groves, R., Wagner, L., Csutak, S.

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Record RF performance of 45-nm SOI CMOS Technology von Sungjae Lee, Jagannathan, B., Narasimha, S., Chou, A., Zamdmer, N., Johnson, J., Williams, R., Wagner, L., Jonghae Kim, Plouchart, J.-O., Pekarik, J., Springer, S., Freeman, G.

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Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices von Gogineni, Usha, Hongmei Li, del Alamo, Jesus A, Sweeney, Susan L, Jing Wang, Jagannathan, Basanth

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Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS von Joseph, A.J., Dunn, J., Nowak, E., Harame, D.L., Jagannathan, B., Coolbaugh, D., Ahlgren, D., Magerlein, J., Lanzerotti, L., Feilchenfeld, N., St Onge, S.

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SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications von Jae-Sung Rieh, Jagannathan, B., Greenberg, D.R., Meghelli, M., Rylyakov, A., Guarin, F., Zhijian Yang, Ahlgren, D.C., Freeman, G., Cottrell, P., Harame, D.

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A 150 GHz Amplifier With 8 dB Gain and +6 dBm P in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines von Munkyo Seo, Jagannathan, B., Pekarik, J., Rodwell, M.J.W.

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A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines von Munkyo Seo, Jagannathan, B., Carta, C., Pekarik, J., Chen, L., Yue, C.P., Rodwell, M.

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Transistor design and application considerations for >200-GHz SiGe HBTs von Freeman, G., Jagannathan, B., Shwu-Jen Jeng, Jae-Sung Rieh, Stricker, A.D., Ahlgren, D.C., Subbanna, S.

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40-Gb/s circuits built from a 120-GHz f/T/ SiGe technology von Freeman, G, Meghelli, M, Kwark, Y, Zier, S, Rylyakov, A, Sorna, M A, Tanji, T, Schreiber, O M, Walter, K, Rieh, Jae-Sung, Jagannathan, B, Joseph, A, Subbanna, S

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Leakage Engineering Enabling PDSOI Ring Oscillators Operating in Sub-100pA/µm I off Regime von Ren, Zhibin, Cai, Jin, Robison, Robert R., Jagannathan, Basanth, Park, Dae-Gyu, Ning, Tak H.

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Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond von Khakifirooz, A., Kangguo Cheng, Jagannathan, B., Kulkarni, P., Sleight, J.W., Shahrjerdi, D., Chang, J.B., Sungjae Lee, Junjun Li, Huiming Bu, Gauthier, R., Doris, B., Shahidi, G.

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3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay von Jagannathan, B., Meghelli, M., Chan, K., Jae-Sung Rieh, Schonenberg, K., Ahlgren, D., Subbanna, S., Freeman, G.

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A doping concentration-dependent upper limit of the breakdown voltage–cutoff frequency product in Si bipolar transistors von Rieh, Jae-Sung, Jagannathan, Basanth, Greenberg, David, Freeman, Greg, Subbanna, Seshadri

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Product applications and technology directions with SiGe BiCMOS von Joseph, A.J., Dunn, J., Freeman, G., Harame, D.L., Coolbaugh, D., Groves, R., Stein, K.J., Volant, R., Subbanna, S., Marangos, V.S., Onge, S.S., Eshun, E., Cooper, P., Johnson, J.B., Jae-Sung Rieh, Jagannathan, B., Ramachandran, V., Ahlgren, D., Dawn Wang, Wang, X.

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Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices von Gogineni, U., Li, H., Sweeney, S., Wang, J., Jagannathan, B., del Alamo, J.

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300GHz Transistor Performance in Production CMOS Technologies von Jagannathan, Basanth, Chidambarrao, Dureseti, Pekarik, John

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Status and direction of communication technologies : SiGe BiCMOS and RFCMOS: Special issue on silicon germanium - advanced technology, modeling, and design von JOSEPH, Alvin J, HARAME, David L, NOWAK, Edward, JAGANNATHAN, Basanth, COOLBAUGH, Doug, AHLGREN, David, MAGERLEIN, John, LANZEROTTI, Louis, FEILCHENFELD, Natalie, ONGE, Stephen St, DUNN, James

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Region-based power grid generation through modification of an initial power grid based on timing analysis von Trombley, Benjamin Neil, Villarrubia, Paul G, Wolpert, David, Jagannathan, Basanth, Suess, Alexander Joel, Wood, Michael Hemsley, Sigal, Leon, Leland, James

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REGION-BASED POWER GRID GENERATION THROUGH MODIFICATION OF AN INITIAL POWER GRID BASED ON TIMING ANALYSIS von Trombley, Benjamin Neil, Villarrubia, Paul G, Wolpert, David, Jagannathan, Basanth, Suess, Alexander Joel, Wood, Michael Hemsley, Sigal, Leon, Leland, James

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SOI CMOS Technology with 360GHz fT NFET, 260GHz fT PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications von Sungjae Lee, Jonghae Kim, Daeik Kim, Jagannathan, B., Choongyeun Cho, Johnson, J., Dufrene, B., Zamdmer, N., Wagner, L., Williams, R., Fried, D., Ken Rim, Pekarik, J., Springer, S., Plouchart, J.-O., Freeman, G.

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