Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor von Migliorato, Piero, Delwar Hossain Chowdhury, Md, Gwang Um, Jae, Seok, Manju, Jang, Jin

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Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method von Jeong, Chan-Yong, Kim, Jong In, Lee, Jong-Ho, Um, Jae-Gwang, Jang, Jin, Kwon, Hyuck-In

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Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors von Gwang Um, Jae, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

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Origin of light instability in amorphous IGZO thin-film transistors and its suppression von Mativenga, Mallory, Haque, Farjana, Billah, Mohammad Masum, Um, Jae Gwang

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Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress von Um, Jae Gwang, Mativenga, Mallory, Jang, Jin

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Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time von Gwang Um, Jae, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

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Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs With an Etch Stopper von Mativenga, Mallory, Haque, Farjana, Um, Jae Gwang, Siddik, Abu Bakar

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Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics von Kim, Yong-Hwan, Lee, Eunji, Um, Jae Gwang, Mativenga, Mallory, Jang, Jin

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Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs von Rahaman, Abidur, Billah, Mohammad Masum, Um, Jae Gwang, Hasan, Md Mehedi, Jang, Jin

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Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT von Jeon, Jae Kwon, Um, Jae Gwang, Lee, Suhui, Jang, Jin

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Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C von Hasan, Md Mehedi, Billah, Mohammad Masum, Naik, Mude Narendra, Jae Gwang Um, Jin Jang

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Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs von Chang Hoon Jeon, Jae Gwang Um, Mativenga, Mallory, Jin Jang

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Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity von Chowdhury, Md Delwar Hossain, Mativenga, Mallory, Jae Gwang Um, Mruthyunjaya, Ravi K., Heiler, Gregory N., Tredwell, Timothy John, Jin Jang

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Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation von Billah, Mohammad Masum, Delwar Hossain Chowdhury, Md, Mativenga, Mallory, Jae Gwang Um, Mruthyunjaya, Ravi K., Heiler, Gregory N., Tredwell, Timothy John, Jin Jang

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Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C von Chowdhury, Md Delwar Hossain, Um, Jae Gwang, Jang, Jin

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A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays von Shin, Woo-Sul, Ahn, Hyun-A, Hong, Seong-Kwan, Kwon, Oh-Kyong, Lee, Ji-Hun, Um, Jae-Gwang, Jang, Jin, Kim, Sung-Hwan, Lee, Jeong-Soo

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Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors von Mativenga, Mallory, Um, Jae, Jang, Jin

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Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs von Mativenga, Mallory, Haeyeon Jun, Younwoo Choe, Jae Gwang Um, Jin Jang

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Characterization and Modeling of a-IGZO TFTs von Migliorato, Piero, Chowdhury, Md Delwar Hossain, Jae Gwang Um, Manju Seok, Martivenga, Mallory, Jin Jang

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Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors von Jeong, Chan-Yong, Lee, Daeun, Song, Sang-Hun, Kim, Jong In, Lee, Jong-Ho, Um, Jae-Gwang, Jang, Jin, Kwon, Hyuck-In

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