Interstitial defects in silicon from 1–5 keV Si+ ion implantation von Agarwal, Aditya, Haynes, Tony E., Eaglesham, David J., Gossmann, Hans-J., Jacobson, Dale C., Poate, John M., Erokhin, Yu. E.

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Transient enhanced diffusion of B in Si implanted with decaborane cluster ions von SOSNOWSKI, Marek, ALBANO, Maria A, CHENG LI, GOSSMANN, Hans Joachim L, JACOBSON, Dale C

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Chemistry and Structure of Beta Silicon Carbide Implanted with High-Dose Aluminum von Du, Honghua, Yang, Zunde, Libera, Matthew, Jacobson, Dale C., Wang, Yu C., Davis, Robert F.

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Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the [formula omitted] nuclear reaction analysis of B in Si von Magee, Charles W., Jacobson, Dale C.

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Effect of pressure on the solid phase epitaxial regrowth rate of Si von NYGREN, E, AZIZ, M. J, TURNBULL, D, POATE, J. M, JACOBSON, D. C, HULL, R

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Sputtering of Si with decaborane cluster ions von Sosnowski, Marek, Albano, Maria A., Li, Cheng, Gossmann, Hans-Joachim L., Jacobson, Dale C.

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Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the 11B(p, α)8Be nuclear reaction analysis of B in Si von MAGEE, Charles W, JACOBSON, Dale C

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ION IMPLANTATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR BY IMPLANTATION OF BORON HYDRIDE CLUSTER IONS von HORSKY THOMAS N, JACOBSON DALE C

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ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF BORON HYDRIDE CLUSTER IONS von HORSKY THOMAS N, JACOBSON DALE C

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Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions von HORSKY THOMAS N, JACOBSON DALE C

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A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF BORON HYDRIDE CLUSTER IONS von JACOBSON, DALE, C, HORSKY, THOMAS, N

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Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions von HORSKY THOMAS N, JACOBSON DALE C

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Semiconductor device and method of fabricating a semiconductor device von Krull, Wade A, Jacobson, Dale C

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Semiconductor device and method of fabricating a semiconductor device von KRULL WADE A, JACOBSON DALE C

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ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF BORON HYDRIDE CLUSTER IONS von HORSKY THOMAS N, JACOBSON DALE C

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Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions von Horsky, Thomas N, Jacobson, Dale C

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Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions von HORSKY THOMAS N, JACOBSON DALE C

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ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF BORON HYDRIDE CLUSTER IONS von HORSKY THOMAS N, JACOBSON DALE C

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Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions von HORSKY THOMAS N, JACOBSON DALE C

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Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions von Horsky, Thomas N, Jacobson, Dale C

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