Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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Open Reduction and Internal Fixation of Scapula Fractures in a Geriatric Series von Cole, Peter A., Jacobson, Aaron R., Cole, Peter A.

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Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode von Zheng, B., Michel, J., Ren, F. Y. G., Kimerling, L. C., Jacobson, D. C., Poate, J. M.

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Equilibrium shape of Si von EAGLESHAM, D. J, WHITE, A. E, FELDMAN, L. C, MORIYA, N, JACOBSON, D. C

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Density of amorphous Si von Custer, J. S., Thompson, Michael O., Jacobson, D. C., Poate, J. M., Roorda, S., Sinke, W. C., Spaepen, F.

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Growth morphology and the equilibrium shape : the role of «surfactants» in Ge/Si island formation von EAGLESHAM, D. J, UNTERWALD, F. C, JACOBSON, D. C

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Electron field emission from ion-implanted diamond von Zhu, W., Kochanski, G. P., Jin, S., Seibles, L., Jacobson, D. C., McCormack, M., White, A. E.

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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon von Venezia, V. C., Haynes, T. E., Agarwal, Aditya, Pelaz, L., Gossmann, H.-J., Jacobson, D. C., Eaglesham, D. J.

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling von Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

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Carbon diffusion in silicon von Werner, P., Gösele, U., Gossmann, H.-J., Jacobson, D. C.

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Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon von MICHEL, J, BENTON, J. L, FERRANTE, R. F, JACOBSON, D. C, EAGLESHAM, D. J, FITZGERALD, E. A, XIE, Y.-H, POATE, J. M, KIMERLING, L. C

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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials von Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Haynes, T. E., Erokhin, Yu. E.

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Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity von VREDENBERG, A. M, HUNT, N. E. J, SCHUBERT, E. F, JACOBSON, D. C, POATE, J. M, ZYDZIK, G. J

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Paying for Quality Not Quantity: A Wisconsin Health Maintenance Organization Proposes an Incentive Model for Reimbursement of Chiropractic Services von Pursel, Kevin J., DC, Jacobson, Martin, DC, Stephenson, Kathy, RN

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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon von Haynes, T. E., Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Jacobson, D. C., Poate, J. M.

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The interstitial fraction of diffusivity of common dopants in Si von Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

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Trap-limited interstitial diffusion and enhanced boron clustering in silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Poate, J. M., Luftman, H. S.

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Interstitial defects in silicon from 1–5 keV Si+ ion implantation von Agarwal, Aditya, Haynes, Tony E., Eaglesham, David J., Gossmann, Hans-J., Jacobson, Dale C., Poate, John M., Erokhin, Yu. E.

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Behavior of molybdenum in silicon evaluated for integrated circuit processing von BENTON, J. L, JACOBSON, D. C, JACKSON, B, JOHNSON, J. A, BOONE, T, EAGLESHAM, D. J, STEVIE, F. A, BECERRO, J

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Observations of structural order in ion-implanted amorphous silicon von Cheng, Ju-Yin, Gibson, J. M., Jacobson, D. C.

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