Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon von Venezia, V. C., Haynes, T. E., Agarwal, Aditya, Pelaz, L., Gossmann, H.-J., Jacobson, D. C., Eaglesham, D. J.

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling von Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

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High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology von Jacobson, D.C., Kamgar, A., Eaglesham, D.J., Lloyd, E.J., Hillenius, S.J., Poate, J.M.

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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials von Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Haynes, T. E., Erokhin, Yu. E.

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Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties von Poate, J.M., Coffa, S., Jacobson, D.C., Polman, A., Roth, J.A., Olson, G.L., Roorda, S., Sinke, W., Custer, J.S., Thompson, M.O., Spaepen, F., Donovan, E.

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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon von Haynes, T. E., Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Jacobson, D. C., Poate, J. M.

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The interstitial fraction of diffusivity of common dopants in Si von Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

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Interstitial defects in silicon from 1–5 keV Si+ ion implantation von Agarwal, Aditya, Haynes, Tony E., Eaglesham, David J., Gossmann, Hans-J., Jacobson, Dale C., Poate, John M., Erokhin, Yu. E.

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Iron gettering mechanisms in silicon von Benton, J. L., Stolk, P. A., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Ha, N. T., Haynes, T. E., Myers, S. M.

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Transient enhanced diffusion of Sb and B due to MeV silicon implants von Eaglesham, D. J., Haynes, T. E., Gossmann, H.-J., Jacobson, D. C., Stolk, P. A., Poate, J. M.

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Transient enhanced diffusion from decaborane molecular ion implantation von Agarwal, Aditya, Gossmann, H.-J., Jacobson, D. C., Eaglesham, D. J., Sosnowski, M., Poate, J. M., Yamada, I., Matsuo, J., Haynes, T. E.

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The mechanism of iron gettering in boron-doped silicon von Stolk, P. A., Benton, J. L., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Myers, S. M., Haynes, T. E.

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Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation von THOMPSON, M. O, GALVIN, G. J, MAYER, J. W, PEERCY, P. S, POATE, J. M, JACOBSON, D. C, CULLIS, A. G, CHEW, N. G

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Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter von Kalyanaraman, R, Haynes, T.E, Yoon, M, Larson, B.C, Jacobson, D.C, Gossmann, H.-J, Rafferty, C.S

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Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon von Agarwal, Aditya, Gossmann, H.-J, Eaglesham, D.J, Pelaz, L, Herner, S.B, Jacobson, D.C, Haynes, T.E, Simonton, R

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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion von Agarwal, Aditya, Gossmann, H.-J, Eaglesham, D.J, Pelaz, L, Jacobson, D.C, Poate, J.M, Haynes, T.E

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The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si von Libertino, S., Benton, J. L., Jacobson, D. C., Eaglesham, D. J., Poate, J. M., Coffa, S., Fuochi, P. G., Lavalle, M.

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The mechanisms of iron gettering in silicon by boron ion-implantation von BENTON, J. L, STOLK, P. A, EAGLESHAM, D. J, JACOBSON, D. C, CHENG, J. Y, POATE, J. M, MYERS, S. M, HAYNES, T. E

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Proximity gettering of Au to ion beam induced defects in silicon von Wong-Leung, J., Williams, J.S., Elliman, R.G., Nygren, E., Eaglesham, D.J., Jacobson, D.C., Poate, J.M.

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