Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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Density of amorphous Si von Custer, J. S., Thompson, Michael O., Jacobson, D. C., Poate, J. M., Roorda, S., Sinke, W. C., Spaepen, F.

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling von Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

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Optical doping of waveguide materials by MeV Er implantation von POLMAN, A, JACOBSON, D. C, EAGLESHAM, D. J, KISTLER, R. C, POATE, J. M

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Electron field emission from ion-implanted diamond von Zhu, W., Kochanski, G. P., Jin, S., Seibles, L., Jacobson, D. C., McCormack, M., White, A. E.

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Carbon diffusion in silicon von Werner, P., Gösele, U., Gossmann, H.-J., Jacobson, D. C.

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Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon von MICHEL, J, BENTON, J. L, FERRANTE, R. F, JACOBSON, D. C, EAGLESHAM, D. J, FITZGERALD, E. A, XIE, Y.-H, POATE, J. M, KIMERLING, L. C

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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials von Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Haynes, T. E., Erokhin, Yu. E.

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Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation von DONOVAN, E. P, SPAEPEN, F, TURNBULL, D, POATE, J. M, JACOBSON, D. C

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The electrical and defect properties of erbium-implanted silicon von BENTON, J. L, MICHEL, J, KIMERLING, L. C, JACOBSON, D. C, XIE, Y.-X, EAGLESHAM, D. J, FITZGERALD, E. A, POATE, J. M

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Microstructure of erbium-implanted Si von Eaglesham, D. J., Michel, J., Fitzgerald, E. A., Jacobson, D. C., Poate, J. M., Benton, J. L., Polman, A., Xie, Y.-H., Kimerling, L. C.

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Trap-limited interstitial diffusion and enhanced boron clustering in silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Poate, J. M., Luftman, H. S.

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The interstitial fraction of diffusivity of common dopants in Si von Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

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GIANT ENHANCEMENT OF LUMINESCENCE INTENSITY IN ER-DOPED SI/SIO2 RESONANT CAVITIES von SCHUBERT, EF, VREDENBERG, AM, HUNT, NEJ, WONG, YH, BECKER, PC, POATE, JM, JACOBSON, DC, FELDMAN, LC, ZYDZIK, GJ

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Distribution of fos-like immunoreactivity in the rat brain following intravenous lipopolysaccharide administration von Elmquist, Joel K., Scammell, Thomas E., Jacobson, Carol D., Saper, Clifford B.

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Behavior of molybdenum in silicon evaluated for integrated circuit processing von BENTON, J. L, JACOBSON, D. C, JACKSON, B, JOHNSON, J. A, BOONE, T, EAGLESHAM, D. J, STEVIE, F. A, BECERRO, J

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Iron gettering mechanisms in silicon von Benton, J. L., Stolk, P. A., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Ha, N. T., Haynes, T. E., Myers, S. M.

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Observations of structural order in ion-implanted amorphous silicon von Cheng, Ju-Yin, Gibson, J. M., Jacobson, D. C.

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The precipitation of Fe at the Si–SiO2 interface von Wong-Leung, J., Eaglesham, D. J., Sapjeta, J., Jacobson, D. C., Poate, J. M., Williams, J. S.

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Transient enhanced diffusion of Sb and B due to MeV silicon implants von Eaglesham, D. J., Haynes, T. E., Gossmann, H.-J., Jacobson, D. C., Stolk, P. A., Poate, J. M.

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