Experimental study of the oxidation of silicon germanium alloys von Kilpatrick, S. J., Jaccodine, R. J., Thompson, P. E.

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A diffusional model for the oxidation behavior of Si1−xGex alloys von Kilpatrick, S. J., Jaccodine, R. J., Thompson, P. E.

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Electron spin resonance study of the effect of applied stress during thermal oxidation of (1 1 1)Si on inherent Pb interface defects von Pierreux, D., Stesmans, A., Jaccodine, R.J., Lin, M.-T., Delph, T.J.

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Stress effects in the oxidation of planar silicon substrates von Mihalyi, A., Jaccodine, R. J., Delph, T. J.

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Fluorine-enhanced oxidation of silicon : effects of fluorine on oxide stress and growth kinetics von KOUVATSOS, D, HUANG, J. G, JACCODINE, R. J

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An angle-resolved study of early oxidation ( < 3.0 nm ) of Si-Ge alloys von Kilpatrick, S. J., Jaccodine, R. J.

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Doping-density dependence of scanning tunneling spectroscopy on lightly doped silicon von Lin, H.-A., Jaccodine, R., Freund, M. S.

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Submicron oxidation thickening von JACCODINE, R. J, RAPOSO, H, LI, S, LIU, X. M, WEBER, G. W

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Chemically assisted oxidation of silicon nitride von JACCODINE, R, CHI, Y. P, REPOSO, H, LI, S

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Influence of in situ applied stress during thermal oxidation of (111)Si on Pb interface defects von Stesmans, A., Pierreux, D., Jaccodine, R. J., Lin, M.-T., Delph, T. J.

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Planar oxidation of strained silicon substrates von Lin, M-T., Jaccodine, R. J., Delph, T. J.

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Self-assembly formed oxime monolayers on a copper surface von Diem, T., Fabianowski, W., Jaccodine, R., Rodowski, R.

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Fast growth of thin gate dielectrics by thermal oxidation of Si in N2O gas ambient with low concentration of NF3 addition von HUANG, J. G, JACCODINE, R. J

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Effect of fluorine on the diffusion of through-oxide implanted boron in silicon von FAN, D, PARKS, J. M, JACCODINE, R. J

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An analytical model of diffusion current in intrinsically gettered structures based on intentional contamination experiments von Pearce, C.W., Jaccodine, R.J.

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Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon von HUANG, J, FAN, D, JACCODINE, R. J

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Role of recoil implanted oxygen in determining boron diffusion in silicon von FAN, D, JACCODINE, R. J

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Impurity dependence of film-edge-induced dislocations in silicon von HUANG, C. K, JACCODINE, R. J

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The effect of fluorine additions to the oxidation of silicon von KUM, U. S, WOLOWODIUK, C. H, JACCODINE, R. J, STEVIE, F, KAHORA, P

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Enhanced tail diffusion of ion implanted boron in silicon von FAN, D, HUANG, J, JACCODINE, R. J, KAHORA, P, STEVIE, F

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