Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n-inp schottky barrier interface von Reddy, M. Siva Pratap, Kang, Hee-Sung, Lee, Jung-Hee, Reddy, V. Rajagopal, Jang, Ja-Soon

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High output power GaN-based light-emitting diodes using an electrically reverse-connected p -Schottky diode and p -InGaN - GaN superlattice von Jang, Ja-Soon

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Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy von Sukrittanon, S., Kuang, Y. J., Dobrovolsky, A., Kang, Won-Mo, Jang, Ja-Soon, Kim, Bong-Joong, Chen, W. M., Buyanova, I. A., Tu, C. W.

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Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED von Taka, Daichi, Onuma, Takeyoshi, Shibukawa, Takashi, Nagai, Hiroki, Yamaguchi, Tomohiro, Jang, Ja‐Soon, Sato, Mitsunobu, Honda, Tohru

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Optimization of p-Bonding Electrodes on ZnO:Ga in GaN-Based Light-Emitting Diodes von Choi, Jun-Hyuk, Kim, Sei-Min, Jang, Ja-Soon

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Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams von Kim, Min-Woo, Jung, Wan-Gil, Hyun-Cho, Bae, Tae-Sung, Chang, Sung-Jin, Jang, Ja-Soon, Hong, Woong-Ki, Kim, Bong-Joong

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Schottky barrier characteristics of Pt contacts to n -type InGaN von Jang, Ja-Soon, Kim, Donghwan, Seong, Tae-Yeon

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Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures von Reddy, M. Siva Pratap, Lee, Jung-Hee, Jang, Ja-Soon

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Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer von Siva Pratap Reddy, M., Lee, Jung-Hee, Jang, Ja-Soon

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Dual detection of ultraviolet and visible lights using a DNA-CTMA/GaN photodiode with electrically different polarity von Reddy, M Siva Pratap, Kim, Bong-Joong, Jang, Ja-Soon

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Optimum condition for the growth of Pt-CeO2 nanocomposite electrodes for thin-film fuel cells von AHN, Hyo-Jin, JANG, Ja-Soon, YUNG EUN SUNG, SEONG, Tae-Yeon

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Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p -GaN von Jang, Ja-Soon, Seong, Tae-Yeon

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Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN von Jang, Ja-Soon, Seong, Tae-Yeon

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Low-resistance Pt/Ni/Au ohmic contacts to p -type GaN von Jang, Ja-Soon, Chang, In-Sik, Kim, Han-Ki, Seong, Tae-Yeon, Lee, Seonghoon, Park, Seong-Ju

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High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN von Kim, Sei-Min, Jang, Seon-Ho, Jang, Ja-Soon

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High-performance light-emitting diodes using hierarchical m-plane GaN nano-prism light extractors von M., Siva Pratap Reddy, Park, Herie, Kim, Se-Min, Jang, Seon-Ho, Jang, Ja-Soon

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Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure von Reddy, M. Siva Pratap, Kwon, Mi-Kyung, Kang, Hee-Sung, Kim, Dong-Seok, Lee, Jung-Hee, Reddy, V. Rajagopal, Jang, Ja-Soon

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Real-time smart lighting control using human motion tracking from depth camera von Chun, SungYong, Lee, Chan-Su, Jang, Ja-Soon

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Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p -GaN von Jang, Ja-Soon, Park, Seong-Ju, Seong, Tae-Yeon

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Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p -type GaN von Leem, Dong-Seok, Kim, Tae-Wook, Lee, Takhee, Jang, Ja-Soon, Ok, Young-Woo, Seong, Tae-Yeon

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