Perspective: The future of quantum dot photonic integrated circuits von Norman, Justin C., Jung, Daehwan, Wan, Yating, Bowers, John E.

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High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si von Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., Bowers, John E.

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Low threading dislocation density GaAs growth on on-axis GaP/Si (001) von Jung, Daehwan, Callahan, Patrick G., Shin, Bongki, Mukherjee, Kunal, Gossard, Arthur C., Bowers, John E.

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Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon von Selvidge, Jennifer, Norman, Justin, Hughes, Eamonn T., Shang, Chen, Jung, Daehwan, Taylor, Aidan A., Kennedy, M. J., Herrick, Robert, Bowers, John E., Mukherjee, Kunal

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Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si von Liu, Songtao, Norman, Justin C., Jung, Daehwan, Kennedy, MJ, Gossard, Arthur C., Bowers, John E.

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Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers von Jung, Daehwan, Yu, Lan, Dev, Sukrith, Wasserman, Daniel, Lee, Minjoo Larry

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Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon von Mukherjee, Kunal, Selvidge, Jennifer, Jung, Daehwan, Norman, Justin, Taylor, Aidan A., Salmon, Mike, Liu, Alan Y., Bowers, John E., Herrick, Robert W.

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O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si von Wan, Yating, Jung, Daehwan, Norman, Justin, Shang, Chen, MacFarlane, Ian, Li, Qiang, Kennedy, M J, Gossard, Arthur C, Lau, Kei May, Bowers, John E

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Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers von Jung, Daehwan, Yu, Lan, Wasserman, Daniel, Larry Lee, Minjoo

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Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy von Jung, Daehwan, Ironside, Daniel J., Bank, Seth R., Gossard, Arthur C., Bowers, John E.

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Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers von Buffolo, Matteo, Samparisi, Fabio, De Santi, Carlo, Daehwan Jung, Norman, Justin, Bowers, John E., Herrick, Robert W., Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

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GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer von Kim, Yeonhwa, Madarang, May Angelu, Ju, Eunkyo, Laryn, Tsimafei, Chu, Rafael Jumar, Kim, Tae Soo, Ahn, Dae-Hwan, Kim, Taehee, Lee, In-Hwan, Choi, Won Jun, Jung, Daehwan

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Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants von Madarang, May Angelu, Chu, Rafael Jumar, Kim, Yeonhwa, Lung, Quang Nhat Dang, Ju, Eunkyo, Choi, Won Jun, Jung, Daehwan

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Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting von Yerino, Christopher D., Simmonds, Paul J., Liang, Baolai, Jung, Daehwan, Schneider, Christian, Unsleber, Sebastian, Vo, Minh, Huffaker, Diana L., Höfling, Sven, Kamp, Martin, Lee, Minjoo Larry

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Highly tensile-strained Ge/InAlAs nanocomposites von Jung, Daehwan, Faucher, Joseph, Mukherjee, Samik, Akey, Austin, Ironside, Daniel J., Cabral, Matthew, Sang, Xiahan, Lebeau, James, Bank, Seth R., Buonassisi, Tonio, Moutanabbir, Oussama, Lee, Minjoo Larry

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InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001) von Huang, Xue, Song, Yuncheng, Masuda, Taizo, Jung, Daehwan, Lee, Minjoo

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Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap von Yerino, Christopher D., Simmonds, Paul J., Liang, Baolai, Dorogan, Vitaliy G., Ware, Morgan E., Mazur, Yuriy I., Jung, Daehwan, Huffaker, Diana L., Salamo, Gregory J., Lee, Minjoo Larry

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Flexible GaAs Photodetectors with Ultrathin Thermally Grown Silicon Dioxide as a Long‐Lived Barrier for Chronic Biomedical Implants von Hong, Namgi, Geum, Dae-Myeong, Kim, Tae Soo, Ahn, Seung-yeop, Han, Jae-Hoon, Jung, Daehwan, Ryu, Geunhwan, Kim, SangHyeon, Yu, Ki Jun, Choi, Won Jun

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Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si von Jung, Daehwan, Herrick, Robert, Norman, Justin, Turnlund, Katherine, Jan, Catherine, Feng, Kaiyin, Gossard, Arthur C., Bowers, John E.

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40 Gbit/s waveguide photodiode using III–V on silicon heteroepitaxy von Sun, Keye, Gao, Junyi, Jung, Daehwan, Bowers, John, Beling, Andreas

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