An Investigation of Negative Differential Resistance and Novel Collector-Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures von Yuan, Jiahui, Cressler, John D., Zhu, Chendong, Cui, Yan, Niu, Guofu, Liang, Qingqing, Joseph, Alvin J.

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On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds von Jiahui Yuan, Cressler, J.D., Krithivasan, R., Thrivikraman, T., Khater, M.H., Ahlgren, D.C., Joseph, A.J., Jae-Sung Rieh

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Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances von Jae-Sung Rieh, Greenberg, D., Qizhi Liu, Joseph, A.J., Freeman, G., Ahlgren, D.C.

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Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications von Johnson, J.B., Joseph, A.J., Sheridan, D.C., Maladi, R.M., Brandt, P.-O., Persson, J., Andersson, J., Bjorneklett, A., Persson, U., Abasi, F., Tilly, L.

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On Common-Base Avalanche Instabilities in SiGe HBTs von Grens, C.M., Cressler, J.D., Joseph, A.J.

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The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits von Grens, C.M., Cressler, J.D., Andrews, J.M., Qingqing Liang, Joseph, A.J.

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Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs von Appaswamy, A., Bellini, M., Wei-Min Lance Kuo, Peng Cheng, Jiahui Yuan, Chendong Zhu, Cressler, J.D., Guofu Niu, Joseph, A.J.

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On the high-temperature (to 300/spl deg/C) characteristics of SiGe HBTs von Tianbing Chen, Wei-Min Lance Kuo, Enhai Zhao, Qingqing Liang, Zhenrong Jin, Cressler, J.D., Joseph, A.J.

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A 5-6 GHz SiGe HBT monolithic active isolator for improving reverse isolation in wireless systems von Jongsoo Lee, Cressler, J.D., Joseph, A.J.

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Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs von Guofu Niu, Jin Tang, Zhiming Feng, Joseph, A.J., Harame, D.L.

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An inductorless Ka-band SiGe HBT ring oscillator von Wei-Min Lance Kuo, Cressler, J.D., Chen, Y.-J.E., Joseph, A.J.

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Optimization of SiGe HBTs for operation at high current densities von Joseph, A.J., Cressler, J.D., Richey, D.M., Niu, G.

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Impact of collector-base junction traps on low-frequency noise in high breakdown Voltage SiGe HBTs von Jin Tang, Guofu Niu, Joseph, A.J., Harame, D.L.

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Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs von Wier, Brian R., Raghunathan, Uppili S., Fleetwood, Zachary E., Oakley, Michael A., Joseph, Alvin J., Jain, Vibhor, Cressler, John D.

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The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs von Shiming Zhang, Guofu Niu, Cressler, J.D., Joseph, A.J., Freeman, G., Harame, D.L.

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The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology von Cressler, J.D., Hamilton, M.C., Mullinax, G.S., Li, Y., Niu, G., Marshall, C.J., Marshall, P.W., Kim, H.S., Palmer, M.J., Joseph, A.J., Freeman, G.

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The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology von Haugerud, Becca M., Nayeem, Mustayeen B., Krithivasan, Ramkumar, Lu, Yuan, Zhu, Chendong, Cressler, John D., Belford, Rona E., Joseph, Alvin J.

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SiGe BiCMOS technologies - addressing the communication market needs von Joseph, A.J.

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Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs von Jin, Zhenrong, Cressler, John D, Niu, Guofu, Marshall, Paul W, Kim, Hak S, Reed, Robert, Joseph, Alvin J

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Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime von Joseph, A.J., Cressler, J.D., Richey, D.M.

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