An Investigation of Negative Differential Resistance and Novel Collector-Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures von Yuan, Jiahui, Cressler, John D., Zhu, Chendong, Cui, Yan, Niu, Guofu, Liang, Qingqing, Joseph, Alvin J.

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On Common-Base Avalanche Instabilities in SiGe HBTs von Grens, C.M., Cressler, J.D., Joseph, A.J.

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On the high-temperature (to 300/spl deg/C) characteristics of SiGe HBTs von Tianbing Chen, Wei-Min Lance Kuo, Enhai Zhao, Qingqing Liang, Zhenrong Jin, Cressler, J.D., Joseph, A.J.

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A 5-6 GHz SiGe HBT monolithic active isolator for improving reverse isolation in wireless systems von Jongsoo Lee, Cressler, J.D., Joseph, A.J.

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Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs von Guofu Niu, Jin Tang, Zhiming Feng, Joseph, A.J., Harame, D.L.

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An inductorless Ka-band SiGe HBT ring oscillator von Wei-Min Lance Kuo, Cressler, J.D., Chen, Y.-J.E., Joseph, A.J.

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Optimization of SiGe HBTs for operation at high current densities von Joseph, A.J., Cressler, J.D., Richey, D.M., Niu, G.

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Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs von Wier, Brian R., Raghunathan, Uppili S., Fleetwood, Zachary E., Oakley, Michael A., Joseph, Alvin J., Jain, Vibhor, Cressler, John D.

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The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs von Shiming Zhang, Guofu Niu, Cressler, J.D., Joseph, A.J., Freeman, G., Harame, D.L.

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Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs von Jin, Zhenrong, Cressler, John D, Niu, Guofu, Marshall, Paul W, Kim, Hak S, Reed, Robert, Joseph, Alvin J

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Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime von Joseph, A.J., Cressler, J.D., Richey, D.M.

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Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS von Joseph, A.J., Dunn, J., Nowak, E., Harame, D.L., Jagannathan, B., Coolbaugh, D., Ahlgren, D., Magerlein, J., Lanzerotti, L., Feilchenfeld, N., St Onge, S.

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Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs von Niu, Guofu, Juraver, Jean B, Borgarino, Mattia, Jin, Zhenrong, Cressler, John D, Plana, Robert, Llopis, Olivier, Mathew, Suraj, Zhang, Shiming, Clark, Steve, Joseph, Alvin J

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Impact of geometrical scaling on low-frequency noise in SiGe HBTs von Zhenrong Jin, Cressler, J.D., Guofu Niu, Joseph, A.J.

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An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations von Cressler, J.D., Krithivasan, R., Gang Zhang, Guofu Niu, Marshall, P.W., Kim, H.S., Reed, R.A., Palmer, M.J., Joseph, A.J.

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Implementation of the Phase II Compiler for the ARM7TDMI-S Dual-Core Microprocessor von Sebastian, Sherry Joy Alvionne V, Tang, Alvin Joseph J, Alvarez, Anastacia B, Madamba, Joy Alinda R

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3-D simulation of heavy-ion induced charge collection in SiGe HBTs von Varadharajaperumal, M., Niu, G., Krithivasan, R., Cressler, J.D., Reed, R.A., Marshall, P.W., Vizkelethy, G., Dodd, P.E., Joseph, A.J.

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Semiconductor structure with semiconductor-on-insulator region and method von Joseph, Alvin J, Luce, Cameron, Adusumilli, Siva P, Hazbun, Ramsey

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Photodetector with buried airgap reflectors von Jain, Vibhor, Joseph, Alvin J, Adusumilli, Siva P, Shank, Steven M

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Field-effect transistors with a body pedestal von Joseph, Alvin J, Shank, Steven M, Abou-Khalil, Michel J, Zierak, Michael J

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