Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage von Zeng, Guang, Cao, Haiyang, Chen, Weinan, Lutz, Josef

Volltext

Semiconductor Power Devices: Physics, Characteristics, Reliability von Lutz, Josef, Schlangenotto, Heinrich, Scheuermann, Uwe, De Doncker, Rik

Volltext

Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices von Deng, Erping, Borucki, Ludger, Lutz, Josef

Volltext

Dynamic self-clamping at short-circuit turn-off of high-voltage IGBTs von Basler, Thomas, Bhojani, Riteshkumar, Lutz, Josef, Jakob, Roland

Volltext

Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement von Deng, Erping, Chen, Weinan, Heimler, Patrick, Lutz, Josef

Volltext

Some aspects on ruggedness of SiC power devices von Lutz, Josef, Baburske, Roman

Volltext

Dynamic avalanche in bipolar power devices von Lutz, Josef, Baburske, Roman

Volltext

High cycle fatigue testing of Silicon IGBT devices under application-close conditions von Schwabe, Christian, Thonelt, Nick, Lutz, Josef, Basler, Thomas

Volltext

GENERATING DEVICE FOR GENERATING A USEFUL STREAM OF A MEDIUM, IN PARTICULAR FOR GENERATING SOUND von Lutz, Josef

Volltext

Reliability and reliability investigation of wide-bandgap power devices von Lutz, Josef, Franke, Jörg

Volltext

Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test von Liu, Shenyi, Vuorinen, Vesa, Liu, Xing, Fredrikson, Olli, Brand, Sebastian, Tiwary, Nikhilendu, Lutz, Josef, Paulasto-Krockel, Mervi

Volltext

Dynamic avalanche and reliability of high voltage diodes von Lutz, Josef, Domeij, Martin

Volltext

Experimental Investigation of Linear Cumulative Damage Theory With Power Cycling Test von Zeng, Guang, Herold, Christian, Methfessel, Torsten, Schafer, Marc, Schilling, Oliver, Lutz, Josef

Volltext

Study on the IGBT Short Circuit Type II Behavior Considering the Plasma Effect von Liu, Xing, Mysore, Madhu-Lakshman, Lutz, Josef, Basler, Thomas

Volltext

The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection von Liu, Xing, Kowalsky, Jens, Herrmann, Clemens, Baumler, Christian, Lutz, Josef

Volltext

Influence of power cycling ageing on the current and voltage transitions during hard switching of IGBT devices von Deng, Erping, Liu, Xing, Seidel, Peter, Chen, Jie, Lutz, Josef

Volltext

Influence of thermal interface material using discrete Si-IGBTs and consideration of power cycling conditions von Heimler, Patrick, Günther, Marco, Künzel, Cesare, Lutz, Josef, Basler, Thomas

Volltext

Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in \hbox^- \hbox^ - \hbox^ Diodes von Baburske, R., Heinze, B., Lutz, J., Niedernostheide, F.-J.

Volltext

Challenges Regarding Parallel Connection of SiC JFETs von Peftitsis, D., Baburske, R., Rabkowski, J., Lutz, J., Tolstoy, G., Nee, H.

Volltext

Requirements in power cycling for precise lifetime estimation von Herold, Christian, Franke, Jörg, Bhojani, Riteshkumar, Schleicher, Andre, Lutz, Josef

Volltext