Mono- and Bilayer WS2 Light-Emitting Transistors von Jo, Sanghyun, Ubrig, Nicolas, Berger, Helmuth, Kuzmenko, Alexey B, Morpurgo, Alberto F

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Electrostatically Induced Superconductivity at the Surface of WS2 von Jo, Sanghyun, Costanzo, Davide, Berger, Helmuth, Morpurgo, Alberto F

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Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics von Park, Ju Yong, Choe, Duk-Hyun, Lee, Dong Hyun, Yu, Geun Taek, Yang, Kun, Kim, Se Hyun, Park, Geun Hyeong, Nam, Seung-Geol, Lee, Hyun Jae, Jo, Sanghyun, Kuh, Bong Jin, Ha, Daewon, Kim, Yongsung, Heo, Jinseong, Park, Min Hyuk

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Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping von Ubrig, Nicolas, Jo, Sanghyun, Philippi, Marc, Costanzo, Davide, Berger, Helmuth, Kuzmenko, Alexey B, Morpurgo, Alberto F

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Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment von Kang, Seunghun, Woo-Sung, Jang, Morozovska, Anna N, Kwon, Owoong, Jin, Yeongrok, Young-Hoon, Kim, Bae, Hagyoul, Wang, Chenxi, Sang-Hyeok Yang, Belianinov, Alex, Randolph, Steven, Eliseev, Eugene A, Collins, Liam, Park, Yeehyun, Sanghyun Jo, Min-Hyoung Jung, Kyoung-June Go, Cho, Hae Won, Si-Young, Choi, Jang, Jae Hyuck, Kim, Sunkook, Hu Young Jeong, Lee, Jaekwang, Ovchinnikova, Olga S, Heo, Jinseong, Kalinin, Sergei V, Young-Min, Kim, Kim, Yunseok

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Wafer‐Scale Synthesis of Reliable High‐Mobility Molybdenum Disulfide Thin Films via Inhibitor‐Utilizing Atomic Layer Deposition von Jeon, Woojin, Cho, Yeonchoo, Jo, Sanghyun, Ahn, Ji‐Hoon, Jeong, Seong‐Jun

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Laminated Ferroelectric FET With Large Memory Window and High Reliability von Lee, Hyun Jae, Nam, Seunggeol, Lee, Yunseong, Kim, Kihong, Choe, Duk-Hyun, Yoo, Sijung, Park, Yoonsang, Jo, Sanghyun, Kim, Donghoon, Heo, Jinseong

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Resonant Tunneling Spectroscopy to Probe the Giant Stark Effect in Atomically Thin Materials von Zheng, Shoujun, Jo, Sanghyun, Kang, Kyungrok, Sun, Linfeng, Zhao, Mali, Watanabe, Kenji, Taniguchi, Takashi, Moon, Pilkyung, Myoung, Nojoon, Yang, Heejun

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An analytical interpretation of the memory window in ferroelectric field-effect transistors von Yoo, Sijung, Choe, Duk-Hyun, Lee, Hyun Jae, Jo, Sanghyun, Lee, Yun Sung, Park, Yoonsang, Kim, Ki-Hong, Kim, Donghoon, Nam, Seung-Geol

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Interfacial Layer Selection Methodology for Customized Ferroelectric Memories von Lee, Hyun Jae, Moon, Taehwan, Nam, Seunggeol, Bae, Hagyoul, Choe, Duk-Hyun, Jo, Sanghyun, Lee, Yunseong, Park, Yoonsang, Kim, Kihong, Heo, Jinseong

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Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways von Cheon, Cheongbin, Yoon, Jung Hwan, Jo, Sanghyun, Kim, Ho Jun, Lee, Hae June

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Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023) von Park, Ju Yong, Choe, Duk‐Hyun, Lee, Dong Hyun, Yu, Geun Taek, Yang, Kun, Kim, Se Hyun, Park, Geun Hyeong, Nam, Seung‐Geol, Lee, Hyun Jae, Jo, Sanghyun, Kuh, Bong Jin, Ha, Daewon, Kim, Yongsung, Heo, Jinseong, Park, Min Hyuk

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Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas von Jo, Sanghyun, Kang, Suik, Lee, Kyungjun, Kim, Ho Jun

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Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors von Ubrig, Nicolas, Jo, Sanghyun, Berger, Helmuth, Morpurgo, Alberto F., Kuzmenko, Alexey B.

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Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing von Moon, Taehwan, Lee, Hyun Jae, Nam, Seunggeol, Bae, Hagyoul, Choe, Duk-Hyun, Jo, Sanghyun, Lee, Yun Seong, Park, Yoonsang, Yang, J Joshua, Heo, Jinseong

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Gate-induced superconductivity in atomically thin MoS2 crystals von Costanzo, Davide, Jo, Sanghyun, Berger, Helmuth, Morpurgo, Alberto F.

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Validating negative differential capacitance for advanced low-power devices

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Observation of chiral quantum-Hall edge states in graphene von Ki, Dong-Keun, Jo, Sanghyun, Lee, Hu-Jong

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Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls von Choe, Duk-Hyun, Kim, Sunghyun, Moon, Taehwan, Jo, Sanghyun, Bae, Hagyoul, Nam, Seung-Geol, Lee, Yun Seong, Heo, Jinseong

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Puzzle-CAM: Improved localization via matching partial and full features von Sanghyun Jo, Yu, In-Jae

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