Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates von Wang, Chao, Wang, Tianyu, Zhang, Wendi, Jiang, Jun, Chen, Lin, Jiang, Anquan

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Giant Negative Electrocaloric Effect in Antiferroelectric La-Doped Pb(ZrTi)O3 Thin Films Near Room Temperature von Geng, Wenping, Liu, Yang, Meng, Xiangjian, Bellaiche, Laurent, Scott, James F., Dkhil, Brahim, Jiang, Anquan

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Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics von Wang, Xudong, Wang, Peng, Wang, Jianlu, Hu, Weida, Zhou, Xiaohao, Guo, Nan, Huang, Hai, Sun, Shuo, Shen, Hong, Lin, Tie, Tang, Minghua, Liao, Lei, Jiang, Anquan, Sun, Jinglan, Meng, Xiangjian, Chen, Xiaoshuang, Lu, Wei, Chu, Junhao

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Improved polarization retention in LiNbO3 single-crystal memory cells with enhanced etching angles von Chen, Yifan, Zhuang, Xiao, Chai, Xiaojie, Jiang, Xu, Sun, Jie, Jiang, Jun, Jiang, Anquan

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Strain induced enhancement of erasable domain wall current in epitaxial BiFeO3 thin films von Chen, Dongfang, Bai, Zilong, Zhang, Yan, Jiang, Anquan

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Ferroelectric domain wall memory von Li, Yiming, Sun, Jie, Jiang, Anquan

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A ferroelectric fin diode for robust non-volatile memory von Feng, Guangdi, Zhu, Qiuxiang, Liu, Xuefeng, Chen, Luqiu, Zhao, Xiaoming, Liu, Jianquan, Xiong, Shaobing, Shan, Kexiang, Yang, Zhenzhong, Bao, Qinye, Yue, Fangyu, Peng, Hui, Huang, Rong, Tang, Xiaodong, Jiang, Jie, Tang, Wei, Guo, Xiaojun, Wang, Jianlu, Jiang, Anquan, Dkhil, Brahim, Tian, Bobo, Chu, Junhao, Duan, Chungang

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Stripe domains in epitaxial BiFeO3 thin films on (100) SrTiO3 substrates von Chen, Dongfang, Zhao, Donghui, Bai, Zilong, Meng, Jianwei, Ning, Xi-Jing, Jiang, Anquan

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Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures von Zhu, Hui, Zhang, Yingqiao, Jiang, Anquan, Bai, Zilong, Feng, Shiwei, Wang, Pengfei, Meng, Xiao, Qi, Qiong

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The conduction mechanism of large on/off ferroelectric diode currents in epitaxial (111) BiFeO3 thin film von Chen, Zhihui, He, Long, Zhang, Fan, Jiang, Jun, Meng, Jianwei, Zhao, Boyuan, Jiang, Anquan

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Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks von Zhu, Bao, Wen-Jun, Liu, Wei, Lei, Zhang, David Wei, Jiang Anquan, Shi-Jin, Ding

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Ferroelectric polarization and defect-dipole switching in an epitaxial (111) BiFeO3 thin film von Zhao, Boyuan, Chen, Zhihui, Meng, Jianwei, Lu, Hongliang, Zhang, David Wei, Jiang, Anquan

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Advanced Etching Techniques of LiNbO3 Nanodevices von Shen, Bowen, Hu, Di, Dai, Cuihua, Yu, Xiaoyang, Tan, Xiaojun, Sun, Jie, Jiang, Jun, Jiang, Anquan

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Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate von Zhu, Liping, Deng, Hongmei, Liu, Jian, Sun, Lin, Yang, Pingxiong, Jiang, Anquan, Chu, Junhao

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Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories von Meng, Jianwei, Jiang, Jun, Geng, Wenping, Chen, Zhihui, Zhang, Wei, Jiang, Anquan

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Direct observation of the work function evolution of graphene-two-dimensional metal contacts von Yang, Songbo, Zhou, Peng, Chen, Lin, Sun, Qingqing, Wang, Pengfei, Ding, Shijin, Jiang, Anquan, Zhang, David Wei

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Giant Negative Electrocaloric Effect in Antiferroelectric La‐Doped Pb(ZrTi)O 3 Thin Films Near Room Temperature von Geng, Wenping, Liu, Yang, Meng, Xiangjian, Bellaiche, Laurent, Scott, James F., Dkhil, Brahim, Jiang, Anquan

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Mechanism of high temperature hydrogen reduced polarization degradation in Pb(Zr1−xTix)O3 ferroelectric thin film capacitors von Hui, Wenyuan, Chen, Zhihui, Liu, Xiaobing, Jiang, Anquan

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High temperature ferroelectric domain wall memory von Jiang, Jun, Chai, Xiaojie, Wang, Chao, Jiang, Anquan

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High-Power LiNbO3 Domain-Wall Nanodevices von Sun, Jie, Li, Yiming, Zhang, Boyang, Jiang, Anquan

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