Universal passivation effect of (NH4)2Sx treatment on the surface of III-V compound semiconductors von OIGAWA, H, JIA-FA FAN, NANNICHI, Y, SUGAHARA, H, OSHIMA, M

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The effect of (NH4)2S treatment on the interface characteristics of GaAs MIS structures von JIA-FA FAN, OIGAWA, H, NANNICHI, Y

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Self-limiting behavior of the growth of Al2O3 using sequential vapor pulses of TMA and H2O2 von JIA-FA FAN, TOYODA, K

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Growth-temperature dependence of the quality of Al2O3 prepared by sequential surface chemical reaction of trimethylaluminum and H2O2 von JIA FA FAN, TOYODA, K

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Growth-Temperature Dependence of the Quality of Al 2 O 3 Prepared by Sequential Surface Chemical Reaction of Trimethylaluminum and H 2 O 2 von Jia Fa Fan, Jia Fa Fan, Koichi Toyoda, Koichi Toyoda

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Marked reduction of the surface/interface states of GaAs by (NH4)2Sx treatment von JIA-FA FAN, KURATA, Y, NANNICHI, Y

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Metal-dependent Schottky barrier height with the (NH4)2Sx-treated GaAs von FAN, J, OIGAWA, H, NANNICHI, Y

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AES Observation on the Photochemically Washed Surface of GaAs von Oigawa, Haruhiro, Fan, Jia-Fa, Nannichi, Yasuo

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Epitaxial growth of Al on (NH4)2Sx-treated GaAs von OIGAWA, H, JIA-FA FAN, NANNICHI, Y, KAWABE, M

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A model to explain the effective passivation of the GaAs surface by (NH4)2Sx treatment von NANNICHI, Y, JIA-FA FAN, OIGAWA, H, KOMA, A

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Selective etching of Al2O3 on GaAs using excimer lasers von SUGIOKA, K, JIA-FA FAN, KITA, K, TANAKA, S, TOYODA, K

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Self-limiting behavior of the growth of Al 2O 3 using sequential vapor pulses of TMA and H 2O 2 von Fan, Jia-Fa, Toyoda, Koichi

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Marked Reduction of the Surface/Interface States of GaAs by (NH 4 ) 2 S x Treatment von Fan, Jia-Fa, Kurata, Yasushi, Nannichi, Yasuo

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Metal-Dependent Schottky Barrier Height with the (NH 4 ) 2 S x -Treated GaAs von Fan, Jia-Fa, Oigawa, Haruhiro, Nannichi, Yasuo

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The Effect of (NH 4 ) 2 S Treatment on the Interface Characteristics of GaAs MIS Structures von Fan, Jia-Fa, Oigawa, Haruhiro, Nannichi, Yasuo

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Epitaxial Growth of Al on (NH 4 ) 2 S x -Treated GaAs von Oigawa, Haruhiro, Fan, Jia-Fa, Nannichi, Yasuo, Kawabe, Mitsuo

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A Model to Explain the Effective Passivation of the GaAs Surface by (NH 4 ) 2 S x Treatment von Nannichi, Yasuo, Fan, Jia-Fa, Oigawa, Haruhiro, Koma, Atsushi

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Selective Etching of Al 2 O 3 on GaAs using Excimer Lasers von Sugioka, Koji, Fan, Jia-Fa, Kita, Kazuhiro, Tanaka, Shunichi, Koichi Toyoda, Koichi Toyoda

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Low-Temperature Growth of Thin Films of Al 2 O 3 by Sequential Surface Chemical Reaction of trimethylaluminum and H 2 O 2 von Fan, Jia-Fa, Koji Sugioka, Koji Sugioka, Koichi Toyoda, Koichi Toyoda

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Universal Passivation Effect of (NH 4 ) 2 S x Treatment on the Surface of III-V Compound Semiconductors von Oigawa, Haruhiro, Fan, Jia-Fa, Nannichi, Yasuo, Sugahara, Hirohiko, Oshima, Masaharu

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