Temperature-dependent optical, spectral, and thermal characteristics of InGaN/GaN near-ultraviolet light-emitting diodes von Lee, Soo Hyun, Guan, Xiang-Yu, Jeon, Soo-Kun, Yu, Jae Su

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Air-voids embedded high efficiency InGaN-light emitting diode von Park, Eun-Hyun, Jang, Jin, Gupta, Shalini, Ferguson, Ian, Kim, Cheol-Hoi, Jeon, Soo-Kun, Park, Joong-Seo

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The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties von Jeon, Soo-Kun, Lee, Jae-Gab, Park, Eun-Hyun, Jang, Jin, Lim, Jae-Gu, Kim, Seo-Kun, Park, Joong-Seo

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Rare-earth free self-luminescent Ca2KZn2(VO4)3 phosphors for intense white light-emitting diodes von Bharat, L. Krishna, Jeon, Soo-Kun, Krishna, Kurugundla Gopi, Yu, Jae Su

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Effect of device package on optical, spectral, and thermal properties of InGaN/GaN near-ultraviolet lateral light-emitting diodes von Lee, Soo Hyun, Guan, Xiang-Yu, Jeon, Soo-Kun, Yu, Jae Su

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The effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode von Park, Eun-Hyun, Kang, David Nicol Hun, Ferguson, Ian T., Park, Soo-Kun Jeon Joong-Seo, Yoo, Tae-Kyung

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Via-hole-based vertical GaN light emitting diodes von Jung, Hyun-Min, Nam, Gi-Yeon, Choi, Byung-Kyun, Lee, Tae-Hee, Kim, Hyun-Suk, Jeon, Soo-Kun, Park, Eun-Hyun, Kim, Chang-Tae

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Optical, spectral, and thermal characteristics of InGaN/GaN green flip-chip light-emitting diodes von Lee, Soo Hyun, Kim, Dong Churl, Kim, Jongbae, Jeon, Soo-Kun, Yu, Jae Su

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InGaN Light-Emitting Diode With Quasi-Quantum-Dot-Shaped Active Layer Using SiCN Interfacial Layer von Eun-Hyun Park, Soo-Kun Jeon, Chang-Tae Kim, Dong-Hwan Kim, Joong-Seo Park, Ferguson, I.T., Tae-Kyung Yoo

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InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface von Park, Eun-Hyun, Ferguson, Ian T., Jeon, Soo-Kun, Park, Joong-Seo, Yoo, Tae-Kyung

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The effect of the last quantum barrier on the internal quantum efficiency of InGaN-light emitting diode von Park, Eun-Hyun, Jang, Jin, Gupta, Shalini, Ferguson, Ian, Jeon, Soo-Kun, Lim, Jae-Gu, Lee, Jun-Serk, Kim, Cheol-Hoi, Park, Joong-Seo

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An InGaAsP/InP Twin-Guide Laser Diode with Rectangular Ring Cavity von Jeon, Soo-Kun, Kim, Bun-Joong, Kim, Moon-Jung, Cha, Jung-Ho, Kim, Jae-Ho, Kwon, Young-Se

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Rare-earth free self-luminescent Ca 2 KZn 2 (VO 4 ) 3 phosphors for intense white light-emitting diodes von Bharat, L Krishna, Jeon, Soo-Kun, Krishna, Kurugundla Gopi, Yu, Jae Su

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The effect of the internal capacitance of InGaN-light emitting diodeon the electrostatic discharge properties von Jeon, Soo-Kun, Lee, Jae-Gab, Park, Eun-Hyun, Jang, Jin, Lim, Jae-Gu, Kim, Seo-Kun, Park, Joong-Seo

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InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p - Ga N hillocks on the emission surface von Park, Eun-Hyun, Ferguson, Ian T., Jeon, Soo-Kun, Park, Joong-Seo, Yoo, Tae-Kyung

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The effect of the last quantum barrier on the internal quantum efficiencyof InGaN-light emitting diode von Park, Eun-Hyun, Jang, Jin, Gupta, Shalini, Ferguson, Ian, Jeon, Soo-Kun, Lim, Jae-Gu, Lee, Jun-Serk, Kim, Cheol-Hoi, Park, Joong-Seo

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Semiconductor light-emitting device and manufacturing method therefor von Jeon, Soo Kun, Gil, Young Un

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The effect of silicon doping in the selected barrier on the electroluminescence of In Ga N ∕ Ga N multiquantum well light emitting diode von Park, Eun-Hyun, Kang, David Nicol Hun, Ferguson, Ian T., Park, Soo-Kun Jeon Joong-Seo, Yoo, Tae-Kyung

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SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME von JIN, Geun Mo, JEON, Soo Kun

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SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR von JIN, Geun Mo, JEON, Soo Kun

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